IT1059086B - Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa - Google Patents
Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversaInfo
- Publication number
- IT1059086B IT1059086B IT22280/76A IT2228076A IT1059086B IT 1059086 B IT1059086 B IT 1059086B IT 22280/76 A IT22280/76 A IT 22280/76A IT 2228076 A IT2228076 A IT 2228076A IT 1059086 B IT1059086 B IT 1059086B
- Authority
- IT
- Italy
- Prior art keywords
- passivation
- procedure
- semiconductor devices
- voltage power
- power semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000002161 passivation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22280/76A IT1059086B (it) | 1976-04-14 | 1976-04-14 | Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa |
US05/786,385 US4126931A (en) | 1976-04-14 | 1977-04-11 | Method of passivating high-voltage power semiconductor devices |
BR7702277A BR7702277A (pt) | 1976-04-14 | 1977-04-12 | Processo para o apassivamento de elementos semi-condutores de juncao que sao parte de uma porcao de material semi-condutor;e dispositivo semi-condutor |
JP52042094A JPS6026296B2 (ja) | 1976-04-14 | 1977-04-14 | 接合型半導体装置の製造方法 |
FR7711238A FR2348573A1 (fr) | 1976-04-14 | 1977-04-14 | Procede de passivation d'elements semi-conducteurs a jonction |
DE19772716419 DE2716419A1 (de) | 1976-04-14 | 1977-04-14 | Verfahren zum passivieren von leistungs-halbleiterbauelementen |
GB15573/77A GB1569931A (en) | 1976-04-14 | 1977-04-14 | Manufacture of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22280/76A IT1059086B (it) | 1976-04-14 | 1976-04-14 | Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1059086B true IT1059086B (it) | 1982-05-31 |
Family
ID=11194095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22280/76A IT1059086B (it) | 1976-04-14 | 1976-04-14 | Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa |
Country Status (7)
Country | Link |
---|---|
US (1) | US4126931A (it) |
JP (1) | JPS6026296B2 (it) |
BR (1) | BR7702277A (it) |
DE (1) | DE2716419A1 (it) |
FR (1) | FR2348573A1 (it) |
GB (1) | GB1569931A (it) |
IT (1) | IT1059086B (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54106599A (en) * | 1978-02-09 | 1979-08-21 | Hitachi Chem Co Ltd | Preparation of polyamide intermediate for semiconductor processing |
SE8306663L (sv) * | 1982-12-08 | 1984-06-09 | Int Rectifier Corp | Forfarande for framstellning av halvledaranordning |
JPH0716077B2 (ja) * | 1985-10-11 | 1995-02-22 | 三菱電機株式会社 | 半導体レーザ装置の製造方法 |
US6025268A (en) * | 1996-06-26 | 2000-02-15 | Advanced Micro Devices, Inc. | Method of etching conductive lines through an etch resistant photoresist mask |
TW554639B (en) * | 2002-10-04 | 2003-09-21 | Au Optronics Corp | Method for fabricating an OLED device and the solid passivation |
US20120298126A1 (en) * | 2011-03-08 | 2012-11-29 | Lorillard Tobacco Company | Phase Transition Compositions Used to Impart Reduced Ignition Propensity to Smoking Articles |
CN108475665B (zh) | 2015-11-05 | 2022-05-27 | 日立能源瑞士股份公司 | 功率半导体器件 |
JP6903375B2 (ja) * | 2017-04-19 | 2021-07-14 | 株式会社ディスコ | デバイスチップの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3375419A (en) * | 1965-02-25 | 1968-03-26 | Union Carbide Corp | Field effect transistor with poly-p-xylylene insulated gate structure and method |
US3432919A (en) * | 1966-10-31 | 1969-03-18 | Raytheon Co | Method of making semiconductor diodes |
GB1261378A (en) * | 1968-07-08 | 1972-01-26 | Internat Rectifier Company Gre | Improvements relating to the encapsulation of semiconductor devices and other electrical components |
GB1285708A (en) * | 1968-10-28 | 1972-08-16 | Lucas Industries Ltd | Semi-conductor devices |
US3895429A (en) * | 1974-05-09 | 1975-07-22 | Rca Corp | Method of making a semiconductor device |
US4037306A (en) * | 1975-10-02 | 1977-07-26 | Motorola, Inc. | Integrated circuit and method |
-
1976
- 1976-04-14 IT IT22280/76A patent/IT1059086B/it active
-
1977
- 1977-04-11 US US05/786,385 patent/US4126931A/en not_active Expired - Lifetime
- 1977-04-12 BR BR7702277A patent/BR7702277A/pt unknown
- 1977-04-14 JP JP52042094A patent/JPS6026296B2/ja not_active Expired
- 1977-04-14 FR FR7711238A patent/FR2348573A1/fr active Granted
- 1977-04-14 DE DE19772716419 patent/DE2716419A1/de not_active Ceased
- 1977-04-14 GB GB15573/77A patent/GB1569931A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS52144968A (en) | 1977-12-02 |
GB1569931A (en) | 1980-06-25 |
JPS6026296B2 (ja) | 1985-06-22 |
DE2716419A1 (de) | 1977-11-03 |
FR2348573B1 (it) | 1982-08-13 |
FR2348573A1 (fr) | 1977-11-10 |
US4126931A (en) | 1978-11-28 |
BR7702277A (pt) | 1977-12-20 |
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Legal Events
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19950428 |