IT1059086B - Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa - Google Patents

Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa

Info

Publication number
IT1059086B
IT1059086B IT22280/76A IT2228076A IT1059086B IT 1059086 B IT1059086 B IT 1059086B IT 22280/76 A IT22280/76 A IT 22280/76A IT 2228076 A IT2228076 A IT 2228076A IT 1059086 B IT1059086 B IT 1059086B
Authority
IT
Italy
Prior art keywords
passivation
procedure
semiconductor devices
voltage power
power semiconductor
Prior art date
Application number
IT22280/76A
Other languages
English (en)
Inventor
R Rocak
L Gandolfi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT22280/76A priority Critical patent/IT1059086B/it
Priority to US05/786,385 priority patent/US4126931A/en
Priority to BR7702277A priority patent/BR7702277A/pt
Priority to JP52042094A priority patent/JPS6026296B2/ja
Priority to FR7711238A priority patent/FR2348573A1/fr
Priority to DE19772716419 priority patent/DE2716419A1/de
Priority to GB15573/77A priority patent/GB1569931A/en
Application granted granted Critical
Publication of IT1059086B publication Critical patent/IT1059086B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3178Coating or filling in grooves made in the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
IT22280/76A 1976-04-14 1976-04-14 Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa IT1059086B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT22280/76A IT1059086B (it) 1976-04-14 1976-04-14 Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa
US05/786,385 US4126931A (en) 1976-04-14 1977-04-11 Method of passivating high-voltage power semiconductor devices
BR7702277A BR7702277A (pt) 1976-04-14 1977-04-12 Processo para o apassivamento de elementos semi-condutores de juncao que sao parte de uma porcao de material semi-condutor;e dispositivo semi-condutor
JP52042094A JPS6026296B2 (ja) 1976-04-14 1977-04-14 接合型半導体装置の製造方法
FR7711238A FR2348573A1 (fr) 1976-04-14 1977-04-14 Procede de passivation d'elements semi-conducteurs a jonction
DE19772716419 DE2716419A1 (de) 1976-04-14 1977-04-14 Verfahren zum passivieren von leistungs-halbleiterbauelementen
GB15573/77A GB1569931A (en) 1976-04-14 1977-04-14 Manufacture of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22280/76A IT1059086B (it) 1976-04-14 1976-04-14 Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa

Publications (1)

Publication Number Publication Date
IT1059086B true IT1059086B (it) 1982-05-31

Family

ID=11194095

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22280/76A IT1059086B (it) 1976-04-14 1976-04-14 Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa

Country Status (7)

Country Link
US (1) US4126931A (it)
JP (1) JPS6026296B2 (it)
BR (1) BR7702277A (it)
DE (1) DE2716419A1 (it)
FR (1) FR2348573A1 (it)
GB (1) GB1569931A (it)
IT (1) IT1059086B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106599A (en) * 1978-02-09 1979-08-21 Hitachi Chem Co Ltd Preparation of polyamide intermediate for semiconductor processing
SE8306663L (sv) * 1982-12-08 1984-06-09 Int Rectifier Corp Forfarande for framstellning av halvledaranordning
JPH0716077B2 (ja) * 1985-10-11 1995-02-22 三菱電機株式会社 半導体レーザ装置の製造方法
US6025268A (en) * 1996-06-26 2000-02-15 Advanced Micro Devices, Inc. Method of etching conductive lines through an etch resistant photoresist mask
TW554639B (en) * 2002-10-04 2003-09-21 Au Optronics Corp Method for fabricating an OLED device and the solid passivation
US20120298126A1 (en) * 2011-03-08 2012-11-29 Lorillard Tobacco Company Phase Transition Compositions Used to Impart Reduced Ignition Propensity to Smoking Articles
CN108475665B (zh) 2015-11-05 2022-05-27 日立能源瑞士股份公司 功率半导体器件
JP6903375B2 (ja) * 2017-04-19 2021-07-14 株式会社ディスコ デバイスチップの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3375419A (en) * 1965-02-25 1968-03-26 Union Carbide Corp Field effect transistor with poly-p-xylylene insulated gate structure and method
US3432919A (en) * 1966-10-31 1969-03-18 Raytheon Co Method of making semiconductor diodes
GB1261378A (en) * 1968-07-08 1972-01-26 Internat Rectifier Company Gre Improvements relating to the encapsulation of semiconductor devices and other electrical components
GB1285708A (en) * 1968-10-28 1972-08-16 Lucas Industries Ltd Semi-conductor devices
US3895429A (en) * 1974-05-09 1975-07-22 Rca Corp Method of making a semiconductor device
US4037306A (en) * 1975-10-02 1977-07-26 Motorola, Inc. Integrated circuit and method

Also Published As

Publication number Publication date
JPS52144968A (en) 1977-12-02
GB1569931A (en) 1980-06-25
JPS6026296B2 (ja) 1985-06-22
DE2716419A1 (de) 1977-11-03
FR2348573B1 (it) 1982-08-13
FR2348573A1 (fr) 1977-11-10
US4126931A (en) 1978-11-28
BR7702277A (pt) 1977-12-20

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950428