IT1051785B - Procedimento per la fabbricazione di un sistema a domini magnetici a bolle di elevata densita - Google Patents

Procedimento per la fabbricazione di un sistema a domini magnetici a bolle di elevata densita

Info

Publication number
IT1051785B
IT1051785B IT29893/75A IT2989375A IT1051785B IT 1051785 B IT1051785 B IT 1051785B IT 29893/75 A IT29893/75 A IT 29893/75A IT 2989375 A IT2989375 A IT 2989375A IT 1051785 B IT1051785 B IT 1051785B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
high density
magnetic domain
domain system
Prior art date
Application number
IT29893/75A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1051785B publication Critical patent/IT1051785B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0858—Generating, replicating or annihilating magnetic domains (also comprising different types of magnetic domains, e.g. "Hard Bubbles")
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866—Detecting magnetic domains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
  • Physical Vapour Deposition (AREA)
IT29893/75A 1974-12-31 1975-12-02 Procedimento per la fabbricazione di un sistema a domini magnetici a bolle di elevata densita IT1051785B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/537,797 US3967002A (en) 1974-12-31 1974-12-31 Method for making high density magnetic bubble domain system

Publications (1)

Publication Number Publication Date
IT1051785B true IT1051785B (it) 1981-05-20

Family

ID=24144129

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29893/75A IT1051785B (it) 1974-12-31 1975-12-02 Procedimento per la fabbricazione di un sistema a domini magnetici a bolle di elevata densita

Country Status (7)

Country Link
US (1) US3967002A (it)
JP (1) JPS5631675B2 (it)
CA (1) CA1071759A (it)
DE (1) DE2553754A1 (it)
FR (1) FR2296911A1 (it)
GB (1) GB1516887A (it)
IT (1) IT1051785B (it)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921157A (en) * 1974-03-27 1975-11-18 Monsanto Co Nonuniform spacing layer for magnetic bubble circuits
US4040019A (en) * 1974-08-23 1977-08-02 Texas Instruments Incorporated Ion implanted magnetic bubble memory device having major and minor rows
US4079359A (en) * 1975-11-03 1978-03-14 Rockwell International Corporation Compact transfer replicate switch for magnetic single wall domain propagation circuits and method of making same
US4172758A (en) * 1975-11-07 1979-10-30 Rockwell International Corporation Magnetic bubble domain device fabrication technique
US4070658A (en) * 1975-12-31 1978-01-24 International Business Machines Corporation Ion implanted bubble propagation structure
GB1527005A (en) * 1975-12-31 1978-10-04 Ibm Method and apparatus for magnetic bubble storage
US4142250A (en) * 1976-12-30 1979-02-27 International Business Machines Corporation Bubble translation switch using magnetic charged wall
US4142249A (en) * 1977-12-06 1979-02-27 Bell Telephone Laboratories, Incorporated Conductor-access, magnetic bubble memory
US4142247A (en) * 1977-12-06 1979-02-27 Bell Telephone Laboratories, Incorporated Conductor-driven magnetic bubble memory with an expander-detector arrangement
US4143420A (en) * 1977-12-06 1979-03-06 Bell Telephone Laboratories Incorporated Conductor-access, magnetic bubble memory
US4143419A (en) * 1977-12-06 1979-03-06 Bell Telephone Laboratories, Incorporated Magnetic bubble memory with single level electrically-conducting, drive arrangement
GB2044027B (en) * 1977-12-06 1982-06-03 Western Electric Co Conductor access bubble memory
US4187553A (en) * 1977-12-23 1980-02-05 International Business Machines Corporation Pedestal bubble domain chip and processes for making same
US4164026A (en) * 1977-12-30 1979-08-07 International Business Machines Corporation Contiguous element field access bubble lattice file
US4181978A (en) * 1978-04-24 1980-01-01 Bell Telephone Laboratories, Incorporated Magnetic bubble memory with expander-detector arrangement
US4264985A (en) * 1978-05-08 1981-04-28 Rockwell International Corporation Continuous propagation structures
US4181979A (en) * 1978-06-12 1980-01-01 Bell Telephone Laboratories, Incorporated Magnetic bubble memory with single-level bubble functional elements
JPS554792A (en) * 1978-06-27 1980-01-14 Ibm Magnetic bubble domain memory device
US4247912A (en) * 1978-11-13 1981-01-27 International Business Machines Corporation Magnetic bubble domain chip with enhanced propagation margins
JPS55153189A (en) * 1979-05-17 1980-11-28 Fujitsu Ltd Manufacture of magnetic bubble unit
US4308592A (en) * 1979-06-29 1981-12-29 International Business Machines Corporation Patterned kill of magnetoresistive layer in bubble domain chip
US4276614A (en) * 1979-12-03 1981-06-30 Bell Telephone Laboratories, Incorporated Ion-implanted magnetic bubble memory with merge port
JPS5680876A (en) * 1979-12-03 1981-07-02 Fujitsu Ltd Magnetic bubble memory chip
FR2480983A1 (fr) * 1980-04-18 1981-10-23 Commissariat Energie Atomique Memoire a bulles magnetiques
US4345317A (en) * 1980-07-25 1982-08-17 Bell Telephone Laboratories, Incorporated Magnetic domain memory with Hall effect detector
US4358830A (en) * 1980-08-25 1982-11-09 National Semiconductor Corporation Bubble memory with enhanced bit density storage area
US4403305A (en) * 1980-12-22 1983-09-06 International Business Machines Corporation Non-data reversing bubble transfer switch for contiguous disks
JPS57170510A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Method of ion implantation
JPS58142510A (ja) * 1982-02-19 1983-08-24 Hitachi Ltd 磁気バブル素子の製造方法
FR2529369A1 (fr) * 1982-06-29 1983-12-30 Commissariat Energie Atomique Memoire a bulles magnetiques a motifs non implantes, son utilisation pour la duplication de bulles et son application a la duplication par element binaire et par bloc d'elements binaires
JPS5956389U (ja) * 1982-10-05 1984-04-12 トキコ株式会社 パツケ−ジ型圧縮機
KR940004986B1 (ko) * 1984-08-27 1994-06-09 가부시기가이샤 히다찌세이사꾸쇼 자성막의 제조방법 및 그것을 사용한 자기헤드
FR2582436B1 (fr) * 1985-05-21 1989-09-15 Commissariat Energie Atomique Generateur de bulles magnetiques pour memoire a bulles en technologie hybride
US6383574B1 (en) * 1999-07-23 2002-05-07 Headway Technologies, Inc. Ion implantation method for fabricating magnetoresistive (MR) sensor element
US6864042B1 (en) 2000-07-25 2005-03-08 Seagate Technology Llc Patterning longitudinal magnetic recording media with ion implantation
US9685186B2 (en) * 2009-02-27 2017-06-20 Applied Materials, Inc. HDD pattern implant system
SG10201401235YA (en) * 2009-04-10 2014-09-26 Applied Materials Inc Use special ion source apparatus and implant with molecular ions to process hdd (high density magnetic disks) with patterned magnetic domains
WO2013077952A1 (en) * 2011-11-23 2013-05-30 Applied Materials, Inc. Apparatus and methods for silicon oxide cvd photoresist planarization

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728153A (en) * 1970-12-21 1973-04-17 North American Rockwell Method of forming bubble domain system
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US3792452A (en) * 1971-06-10 1974-02-12 Bell Telephone Labor Inc Magnetic devices utilizing ion-implanted magnetic materials
US3873373A (en) * 1972-07-06 1975-03-25 Bryan H Hill Fabrication of a semiconductor device
US3828329A (en) * 1972-07-24 1974-08-06 Bell Telephone Labor Inc Single wall domain propagation arrangement
JPS532301B2 (it) * 1973-03-28 1978-01-26

Also Published As

Publication number Publication date
JPS5631675B2 (it) 1981-07-22
FR2296911B1 (it) 1978-05-12
JPS5180729A (it) 1976-07-14
CA1071759A (en) 1980-02-12
US3967002A (en) 1976-06-29
GB1516887A (en) 1978-07-05
FR2296911A1 (fr) 1976-07-30
DE2553754A1 (de) 1976-07-08

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