IN2014MU01589A - - Google Patents
Info
- Publication number
- IN2014MU01589A IN2014MU01589A IN1589MU2014A IN2014MU01589A IN 2014MU01589 A IN2014MU01589 A IN 2014MU01589A IN 1589MU2014 A IN1589MU2014 A IN 1589MU2014A IN 2014MU01589 A IN2014MU01589 A IN 2014MU01589A
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013104949.4A DE102013104949B3 (de) | 2013-05-14 | 2013-05-14 | Leistungselektronische Schalteinrichtung und Anordnung hiermit |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014MU01589A true IN2014MU01589A (de) | 2015-09-04 |
Family
ID=50382203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN1589MU2014 IN2014MU01589A (de) | 2013-05-14 | 2014-05-07 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9530712B2 (de) |
EP (1) | EP2804210A1 (de) |
JP (1) | JP6326280B2 (de) |
KR (1) | KR102214418B1 (de) |
CN (1) | CN104157622B (de) |
DE (1) | DE102013104949B3 (de) |
IN (1) | IN2014MU01589A (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013104949B3 (de) * | 2013-05-14 | 2014-04-24 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung und Anordnung hiermit |
US9437589B2 (en) * | 2014-03-25 | 2016-09-06 | Infineon Technologies Ag | Protection devices |
DE102014106570B4 (de) | 2014-05-09 | 2016-03-31 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit |
DE102014115565B3 (de) * | 2014-10-27 | 2015-10-22 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Schalteinrichtung mit einer feuchtigkeitsdichten und elektrisch isolierenden Abdeckung und zur Herstellung einer Anordnung hiermit |
DE102015111204B4 (de) * | 2015-07-10 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Modul mit Lastanschlusselementen |
DE102015114188B4 (de) * | 2015-08-26 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse |
DE102015114191B3 (de) * | 2015-08-26 | 2016-11-03 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Mehrzahl von Submodulen und mit einer Druckeinrichtung und Anordnung hiermit |
DE102015115611A1 (de) * | 2015-09-16 | 2017-03-16 | Karlsruher Institut für Technologie | Verfahren zum Herstellen von elektronischen Modulen |
DE102015116165A1 (de) * | 2015-09-24 | 2017-03-30 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer leistungselektronischen Schalteinrichtung und leistungselektronische Schalteinrichtung |
DE102015120157A1 (de) * | 2015-11-20 | 2017-05-24 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung mit einer Mehrzahl von Potentialflächen |
DE102016119631B4 (de) * | 2016-02-01 | 2021-11-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Druckeinleitkörper und Anordnung hiermit |
DE102016110912B4 (de) * | 2016-06-14 | 2018-03-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Schalteinrichtung |
DE102016112777B4 (de) * | 2016-07-12 | 2021-03-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
EP3273474A1 (de) | 2016-07-22 | 2018-01-24 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
EP3273473B1 (de) | 2016-07-22 | 2020-09-09 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
EP3273470A1 (de) | 2016-07-22 | 2018-01-24 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
DE102016123113B3 (de) * | 2016-11-30 | 2017-11-09 | Semikron Elektronik Gmbh & Co. Kg | Druckeinrichtung für eine leistungselektronische Schalteinrichtung, Schalteinrichtung und Anordnung hiermit |
DE102016123697B4 (de) * | 2016-12-07 | 2021-06-24 | Semikron Elektronik Gmbh & Co. Kg | Druckeinrichtung für eine leistungselektronische Schalteinrichtung, Schalteinrichtung und Anordnung hiermit |
DE102017100328B4 (de) * | 2017-01-10 | 2020-03-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Leistungshalbleiterbauelement |
DE102017117667B4 (de) * | 2017-08-03 | 2021-11-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer auf eine Schalteinrichtung einwirkenden Druckeinrichtung |
FR3091013B1 (fr) * | 2018-12-21 | 2021-01-15 | Valeo Siemens Eautomotive France Sas | Organe de plaquage, ensemble et équipement électrique |
JP7099385B2 (ja) * | 2019-03-28 | 2022-07-12 | 株式会社デンソー | 加圧部材 |
DE102019113762B4 (de) * | 2019-05-23 | 2022-04-14 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines Leistungshalbleitermoduls |
DE102019209069A1 (de) * | 2019-06-24 | 2020-12-24 | Siemens Aktiengesellschaft | Befestigung von Leistungshalbleiterbauelementen auf gekrümmten Oberflächen |
DE102019126623B4 (de) | 2019-10-02 | 2024-03-14 | Semikron Elektronik Gmbh & Co. Kg Patentabteilung | Leistungselektronische Schalteinrichtung mit einer Vergussmasse |
GB2579467B (en) * | 2020-01-24 | 2021-01-13 | First Light Fusion Ltd | Electrical switching arrangement |
DE102020121033A1 (de) * | 2020-08-10 | 2022-02-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung, Leistungshalbleitermodul damit und Verfahren zur Herstellung |
DE102022101511A1 (de) | 2022-01-24 | 2023-07-27 | Semikron Elektronik Gmbh & Co. Kg | Leistung-Schalteinrichtung mit optimierter Druckplatte |
Family Cites Families (29)
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US5483104A (en) * | 1990-01-12 | 1996-01-09 | Paradigm Technology, Inc. | Self-aligning contact and interconnect structure |
US5267867A (en) * | 1992-09-11 | 1993-12-07 | Digital Equipment Corporation | Package for multiple removable integrated circuits |
JP3281220B2 (ja) * | 1994-12-14 | 2002-05-13 | 株式会社東芝 | 回路モジュールの冷却装置 |
JPH10335579A (ja) * | 1997-05-27 | 1998-12-18 | Toshiba Corp | 大電力半導体モジュール装置 |
JP3965795B2 (ja) * | 1998-08-24 | 2007-08-29 | 株式会社デンソー | 電子部品の半田付け方法 |
US6218730B1 (en) * | 1999-01-06 | 2001-04-17 | International Business Machines Corporation | Apparatus for controlling thermal interface gap distance |
EP1128432B1 (de) * | 2000-02-24 | 2016-04-06 | Infineon Technologies AG | Befestigung von Halbleitermodulen an einem Kühlkörper |
DE10121970B4 (de) * | 2001-05-05 | 2004-05-27 | Semikron Elektronik Gmbh | Leistungshalbleitermodul in Druckkontaktierung |
DE10142614A1 (de) * | 2001-08-31 | 2003-04-03 | Siemens Ag | Leistungselektronikeinheit |
DE10227658B4 (de) * | 2002-06-20 | 2012-03-08 | Curamik Electronics Gmbh | Metall-Keramik-Substrat für elektrische Schaltkreise -oder Module, Verfahren zum Herstellen eines solchen Substrates sowie Modul mit einem solchen Substrat |
US20050127500A1 (en) * | 2003-12-10 | 2005-06-16 | International Business Machines Corporation | Local reduction of compliant thermally conductive material layer thickness on chips |
JP3809168B2 (ja) * | 2004-02-03 | 2006-08-16 | 株式会社東芝 | 半導体モジュール |
DE102006006425B4 (de) | 2006-02-13 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
DE102006015198A1 (de) * | 2006-04-01 | 2007-10-11 | Semikron Elektronik Gmbh & Co. Kg | Verbindungseinrichtung für elektronische Bauelemente |
KR101424297B1 (ko) * | 2006-09-27 | 2014-08-01 | 가부시키가이샤 니콘 | 전자 소자, 가변 커패시터, 마이크로스위치, 마이크로스위치의 구동 방법, mems형 전자 소자, 마이크로 액추에이터 및 mems 광학 소자 |
DE102007006706B4 (de) | 2007-02-10 | 2011-05-26 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit Verbindungseinrichtung sowie Herstellungsverfahren hierzu |
US7808100B2 (en) | 2008-04-21 | 2010-10-05 | Infineon Technologies Ag | Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element |
JP4825259B2 (ja) * | 2008-11-28 | 2011-11-30 | 三菱電機株式会社 | 電力用半導体モジュール及びその製造方法 |
DE102009005915B4 (de) * | 2009-01-23 | 2013-07-11 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
DE102009002992B4 (de) * | 2009-05-11 | 2014-10-30 | Infineon Technologies Ag | Leistungshalbleitermodulanordnung mit eindeutig und verdrehsicher auf einem Kühlkörper montierbarem Leistungshalbleitermodul und Montageverfahren |
US20110279980A1 (en) * | 2010-05-11 | 2011-11-17 | Silicon Integrated Systems Corp. | Heat dissipation structure for liquid crystal television |
WO2011158703A1 (en) * | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
DE102010062556A1 (de) * | 2010-12-07 | 2012-06-14 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterschaltungsanordnung |
DE102011078811B3 (de) * | 2011-07-07 | 2012-05-24 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches System mit einer Kühleinrichtung |
US8975711B2 (en) * | 2011-12-08 | 2015-03-10 | Infineon Technologies Ag | Device including two power semiconductor chips and manufacturing thereof |
JP5661183B2 (ja) * | 2012-02-13 | 2015-01-28 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
US8916968B2 (en) * | 2012-03-27 | 2014-12-23 | Infineon Technologies Ag | Multichip power semiconductor device |
DE102013104949B3 (de) * | 2013-05-14 | 2014-04-24 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung und Anordnung hiermit |
DE102014106570B4 (de) * | 2014-05-09 | 2016-03-31 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit |
-
2013
- 2013-05-14 DE DE102013104949.4A patent/DE102013104949B3/de active Active
-
2014
- 2014-03-11 EP EP14158699.0A patent/EP2804210A1/de not_active Withdrawn
- 2014-05-02 JP JP2014095153A patent/JP6326280B2/ja active Active
- 2014-05-07 IN IN1589MU2014 patent/IN2014MU01589A/en unknown
- 2014-05-14 CN CN201410203042.5A patent/CN104157622B/zh active Active
- 2014-05-14 US US14/120,385 patent/US9530712B2/en active Active
- 2014-05-14 KR KR1020140057786A patent/KR102214418B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN104157622B (zh) | 2018-04-13 |
US9530712B2 (en) | 2016-12-27 |
EP2804210A1 (de) | 2014-11-19 |
KR20140134628A (ko) | 2014-11-24 |
JP2014225664A (ja) | 2014-12-04 |
US20150069599A1 (en) | 2015-03-12 |
JP6326280B2 (ja) | 2018-05-16 |
CN104157622A (zh) | 2014-11-19 |
DE102013104949B3 (de) | 2014-04-24 |
KR102214418B1 (ko) | 2021-02-08 |