IN2014CN02460A - - Google Patents

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Publication number
IN2014CN02460A
IN2014CN02460A IN2460CHN2014A IN2014CN02460A IN 2014CN02460 A IN2014CN02460 A IN 2014CN02460A IN 2460CHN2014 A IN2460CHN2014 A IN 2460CHN2014A IN 2014CN02460 A IN2014CN02460 A IN 2014CN02460A
Authority
IN
India
Prior art keywords
power switch
block power
esd
protection circuitry
esd protection
Prior art date
Application number
Inventor
Mikhail Popovich
Yuan Cheng Christopher Pan
Boris Andreev
Junmou Zhang
Reza Jalilizeinali
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014CN02460A publication Critical patent/IN2014CN02460A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49105—Switch making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A block power switch may be embedded with electrostatic discharge (ESD) protection circuitry. A transistor portion of the block power switch may be allocated to act as part of ESD protection circuitry and may be combined with an RC clamp to provide ESD protection. Adaptive body biasing (ABB) may be applied to the block power switch to reduce on chip area and decrease leakage current of the block power switch.
IN2460CHN2014 2011-11-01 2012-11-01 IN2014CN02460A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/286,498 US8988839B2 (en) 2011-11-01 2011-11-01 Block power switch with embedded electrostatic discharge (ESD) protection and adaptive body biasing
PCT/US2012/063095 WO2013067205A1 (en) 2011-11-01 2012-11-01 Block power switch with embedded electrostatic discharge (esd) protection and adaptive body biasing

Publications (1)

Publication Number Publication Date
IN2014CN02460A true IN2014CN02460A (en) 2015-08-07

Family

ID=47436167

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2460CHN2014 IN2014CN02460A (en) 2011-11-01 2012-11-01

Country Status (8)

Country Link
US (1) US8988839B2 (en)
EP (1) EP2774179B1 (en)
JP (1) JP5823631B2 (en)
KR (1) KR101516303B1 (en)
CN (1) CN103907186B (en)
ES (1) ES2814350T3 (en)
IN (1) IN2014CN02460A (en)
WO (1) WO2013067205A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9300352B2 (en) * 2013-01-30 2016-03-29 Broadcom Corporation Transceiver with board-level configuration of on-chip or external transmit/receive switch
US9466599B2 (en) * 2013-09-18 2016-10-11 Nxp B.V. Static current in IO for ultra-low power applications
US9647551B2 (en) 2015-08-14 2017-05-09 Qualcomm Incorporated Switched power control circuits for controlling the rate of providing voltages to powered circuits, and related systems and methods
KR20170052751A (en) * 2015-11-03 2017-05-15 삼성전자주식회사 Integrated protecting circuit in semiconductor device
US10262829B2 (en) 2015-12-14 2019-04-16 General Electric Company Protection circuit assembly and method for high voltage systems
US10277268B2 (en) * 2017-06-02 2019-04-30 Psemi Corporation Method and apparatus for switching of shunt and through switches of a transceiver
TWI695559B (en) * 2018-12-20 2020-06-01 大陸商北京集創北方科技股份有限公司 Electrostatic discharge protection circuit, sensing device and electronic device
US10979049B2 (en) * 2019-05-03 2021-04-13 Taiwan Semiconductor Manufacturing Company Ltd. Logic buffer circuit and method
DE102020104129A1 (en) * 2019-05-03 2020-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. LOGIC BUFFER AND PROCEDURES

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JPH023272A (en) * 1988-06-20 1990-01-08 Oki Electric Ind Co Ltd Semiconductor integrated circuit provided with overcurrent protective function
JP2000323688A (en) * 1999-05-07 2000-11-24 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device
US6236250B1 (en) * 1999-11-10 2001-05-22 Intel Corporation Circuit for independent power-up sequencing of a multi-voltage chip
JP3899984B2 (en) * 2002-04-09 2007-03-28 富士電機デバイステクノロジー株式会社 Overvoltage protection circuit
TW563298B (en) * 2002-05-29 2003-11-21 Ind Tech Res Inst Latchup protection circuit for integrated circuits on chip
TW536803B (en) * 2002-06-19 2003-06-11 Macronix Int Co Ltd Gate equivalent potential circuit and method for input/output electrostatic discharge protection
US7092307B2 (en) * 2003-04-02 2006-08-15 Qualcomm Inc. Leakage current reduction for CMOS memory circuits
KR100761358B1 (en) * 2004-06-03 2007-09-27 주식회사 하이닉스반도체 Semiconductor memory device and its internal voltage adjustment method
JP4647294B2 (en) * 2004-11-26 2011-03-09 ルネサスエレクトロニクス株式会社 Semiconductor device
JP2006311507A (en) * 2005-03-28 2006-11-09 Matsushita Electric Ind Co Ltd Power switching circuit
TWI278093B (en) 2005-07-15 2007-04-01 Novatek Microelectronics Corp Level shifter ESD protection circuit with power-on-sequence consideration
KR20080045244A (en) 2005-09-19 2008-05-22 더 리젠츠 오브 더 유니버시티 오브 캘리포니아 Esd protection circuits
US7477495B2 (en) 2005-12-13 2009-01-13 Silicon Laboratories, Inc. System and method of ESD protection of integrated circuit components
CN100561818C (en) * 2006-04-27 2009-11-18 北京中星微电子有限公司 A kind of protective circuit of resisting supply voltage sudden change
JP4723443B2 (en) * 2006-09-13 2011-07-13 Ｏｋｉセミコンダクタ株式会社 Semiconductor integrated circuit
JP2009076664A (en) * 2007-09-20 2009-04-09 Fujitsu Ltd Electrostatic discharge protective circuit
JP4516102B2 (en) * 2007-09-26 2010-08-04 株式会社東芝 ESD protection circuit
JP2009206506A (en) * 2008-01-31 2009-09-10 Sanyo Electric Co Ltd Substrate for mounting element and its manufacturing method, semiconductor module and portable device mounted with the same
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US7826188B2 (en) * 2008-06-17 2010-11-02 International Business Machines Corporation Methods, design structures, and systems for current mode logic (CML) differential driver ESD protection circuitry
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KR20110002167A (en) * 2009-07-01 2011-01-07 주식회사 동부하이텍 Esd protection circuit
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Also Published As

Publication number Publication date
CN103907186B (en) 2017-05-31
CN103907186A (en) 2014-07-02
KR101516303B1 (en) 2015-05-04
WO2013067205A1 (en) 2013-05-10
JP5823631B2 (en) 2015-11-25
JP2015504594A (en) 2015-02-12
EP2774179A1 (en) 2014-09-10
ES2814350T3 (en) 2021-03-26
EP2774179B1 (en) 2020-07-01
US8988839B2 (en) 2015-03-24
US20130105951A1 (en) 2013-05-02
KR20140099887A (en) 2014-08-13

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