IN2012DN03820A - - Google Patents
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- Publication number
- IN2012DN03820A IN2012DN03820A IN3820DEN2012A IN2012DN03820A IN 2012DN03820 A IN2012DN03820 A IN 2012DN03820A IN 3820DEN2012 A IN3820DEN2012 A IN 3820DEN2012A IN 2012DN03820 A IN2012DN03820 A IN 2012DN03820A
- Authority
- IN
- India
- Prior art keywords
- powder
- sputtering target
- naf
- contained
- molded article
- Prior art date
Links
- 239000000843 powder Substances 0.000 abstract 5
- 238000005477 sputtering target Methods 0.000 abstract 3
- 239000011812 mixed powder Substances 0.000 abstract 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- -1 NaF compound Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The sputtering target is provided wherein 20 to 40 at% of Ga and 0.05 to 1 at% of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu-Ga powder or a mixed powder of NaF powder, Cu-Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009255540 | 2009-11-06 | ||
JP2010241749A JP4793504B2 (en) | 2009-11-06 | 2010-10-28 | Sputtering target and manufacturing method thereof |
PCT/JP2010/006481 WO2011055537A1 (en) | 2009-11-06 | 2010-11-04 | Sputtering target and process for production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN03820A true IN2012DN03820A (en) | 2015-08-28 |
Family
ID=43969780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3820DEN2012 IN2012DN03820A (en) | 2009-11-06 | 2010-11-04 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8795489B2 (en) |
EP (1) | EP2402482B1 (en) |
JP (1) | JP4793504B2 (en) |
KR (1) | KR101099416B1 (en) |
CN (1) | CN102395702B (en) |
IN (1) | IN2012DN03820A (en) |
TW (1) | TW201126002A (en) |
WO (1) | WO2011055537A1 (en) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011083647A1 (en) * | 2010-01-07 | 2011-07-14 | Jx日鉱日石金属株式会社 | Cu-Ga SPUTTERING TARGET, METHOD FOR MANUFACTURING THE TARGET, LIGHT ABSORBING LAYER, AND SOLAR CELL USING THE LIGHT ABSORBING LAYER |
JP4831258B2 (en) * | 2010-03-18 | 2011-12-07 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
JP5418463B2 (en) * | 2010-10-14 | 2014-02-19 | 住友金属鉱山株式会社 | Method for producing Cu-Ga alloy sputtering target |
JP5153911B2 (en) * | 2011-04-22 | 2013-02-27 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
JP5725610B2 (en) * | 2011-04-29 | 2015-05-27 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
JP2013012717A (en) * | 2011-06-03 | 2013-01-17 | Nitto Denko Corp | Solar cell manufacturing method |
JP5795898B2 (en) * | 2011-07-28 | 2015-10-14 | 株式会社アルバック | CuGaNa sputtering target |
JP5795897B2 (en) * | 2011-07-28 | 2015-10-14 | 株式会社アルバック | CuGaNa sputtering target |
JP5165100B1 (en) * | 2011-11-01 | 2013-03-21 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
JP5919738B2 (en) * | 2011-11-10 | 2016-05-18 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
JP5999357B2 (en) | 2012-02-24 | 2016-09-28 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
US8586457B1 (en) * | 2012-05-17 | 2013-11-19 | Intermolecular, Inc. | Method of fabricating high efficiency CIGS solar cells |
CN102751388B (en) * | 2012-07-18 | 2015-03-11 | 林刘毓 | Preparation method of Cu-In-Ga-Se thin-film solar cell |
JP5907428B2 (en) * | 2012-07-23 | 2016-04-26 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
JP2014037556A (en) * | 2012-08-10 | 2014-02-27 | Mitsubishi Materials Corp | Sputtering target and method for manufacturing the same |
JP6311912B2 (en) * | 2012-10-17 | 2018-04-18 | 三菱マテリアル株式会社 | Cu-Ga binary sputtering target and method for producing the same |
AT13564U1 (en) | 2013-01-31 | 2014-03-15 | Plansee Se | CU-GA-IN-NA Target |
JP6365922B2 (en) | 2013-04-15 | 2018-08-01 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
CN103255367B (en) * | 2013-04-28 | 2015-07-29 | 柳州百韧特先进材料有限公司 | The preparation method of solar cell CIGS absorption layer target material |
JP6120076B2 (en) * | 2013-08-01 | 2017-04-26 | 三菱マテリアル株式会社 | Cu-Ga alloy sputtering target and method for producing the same |
JP5733357B2 (en) * | 2013-08-02 | 2015-06-10 | 住友金属鉱山株式会社 | Cu-Ga alloy sputtering target |
US10202681B2 (en) | 2013-09-27 | 2019-02-12 | Plansee Se | Copper-gallium sputtering target |
JP2015086434A (en) * | 2013-10-30 | 2015-05-07 | 住友金属鉱山株式会社 | METHOD OF MANUFACTURING Cu-Ga ALLOY SPUTTERING TARGET |
JP5973041B2 (en) * | 2014-08-28 | 2016-08-17 | 三菱マテリアル株式会社 | Cu-Ga sputtering target and method for producing Cu-Ga sputtering target |
JP6634750B2 (en) * | 2014-09-22 | 2020-01-22 | 三菱マテリアル株式会社 | Sputtering target and method for manufacturing the same |
WO2016047556A1 (en) * | 2014-09-22 | 2016-03-31 | 三菱マテリアル株式会社 | Sputtering target and method for manufacturing same |
JP2018505311A (en) | 2015-01-12 | 2018-02-22 | ヌボサン,インコーポレイテッド | High-speed sputter deposition of alkali metal-containing precursor films useful for fabricating chalcogenide semiconductors |
TWI551704B (en) * | 2015-05-21 | 2016-10-01 | China Steel Corp | Copper gallium alloy composite sodium element target manufacturing method |
JP6794850B2 (en) * | 2016-02-08 | 2020-12-02 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method of sputtering target |
WO2017147037A1 (en) | 2016-02-26 | 2017-08-31 | Dow Global Technologies Llc | Method for improving stability of photovoltaic articles incorporating chalcogenide semiconductors |
JP2018024933A (en) * | 2016-07-29 | 2018-02-15 | 三菱マテリアル株式会社 | Cu-Ga SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME |
WO2018021105A1 (en) | 2016-07-29 | 2018-02-01 | 三菱マテリアル株式会社 | Cu-Ga SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga SPUTTERING TARGET |
KR102026458B1 (en) * | 2017-05-12 | 2019-09-27 | 서울대학교산학협력단 | Method for producing metal sintered body |
JP2019112671A (en) * | 2017-12-22 | 2019-07-11 | 三菱マテリアル株式会社 | Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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DE68916988T2 (en) * | 1988-03-16 | 1995-03-16 | Mitsui Toatsu Chemicals | Process for the production of gaseous fluorides. |
JPH08253826A (en) * | 1994-10-19 | 1996-10-01 | Sumitomo Electric Ind Ltd | Sintered friction material, composite copper alloy powder used therefor and their production |
JPH08195501A (en) * | 1995-01-18 | 1996-07-30 | Shin Etsu Chem Co Ltd | Ib-iiib-vib compound semiconductor |
JP3249408B2 (en) | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | Method and apparatus for manufacturing thin film light absorbing layer of thin film solar cell |
JP4766441B2 (en) * | 2003-09-17 | 2011-09-07 | 三菱マテリアル株式会社 | Phase change film for semiconductor non-volatile memory and sputtering target for forming the phase change film |
JP4907259B2 (en) * | 2006-08-16 | 2012-03-28 | 山陽特殊製鋼株式会社 | FeCoB-based target material with Cr added |
JP4811660B2 (en) * | 2006-11-30 | 2011-11-09 | 三菱マテリアル株式会社 | High Ga-containing Cu-Ga binary alloy sputtering target and method for producing the same |
US9279178B2 (en) | 2007-04-27 | 2016-03-08 | Honeywell International Inc. | Manufacturing design and processing methods and apparatus for sputtering targets |
JP2009267336A (en) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | Substrate for solar cell and solar cell |
CN101260513B (en) * | 2008-04-23 | 2011-04-06 | 王东生 | Preparation method of solar energy battery copper-indium-gallium-selenium film key target material |
CN101397647B (en) * | 2008-11-03 | 2011-08-17 | 清华大学 | Cu-In-Ga-Se or Cu-In-Al-Se solar cell absorption layer target material and preparation method thereof |
US20100116341A1 (en) * | 2008-11-12 | 2010-05-13 | Solar Applied Materials Technology Corp. | Copper-gallium allay sputtering target, method for fabricating the same and related applications |
JP2010225883A (en) * | 2009-03-24 | 2010-10-07 | Honda Motor Co Ltd | Method of manufacturing thin-film solar cell |
US9284639B2 (en) * | 2009-07-30 | 2016-03-15 | Apollo Precision Kunming Yuanhong Limited | Method for alkali doping of thin film photovoltaic materials |
-
2010
- 2010-10-28 JP JP2010241749A patent/JP4793504B2/en active Active
- 2010-11-04 WO PCT/JP2010/006481 patent/WO2011055537A1/en active Application Filing
- 2010-11-04 IN IN3820DEN2012 patent/IN2012DN03820A/en unknown
- 2010-11-04 EP EP10828098.3A patent/EP2402482B1/en active Active
- 2010-11-04 KR KR1020117022659A patent/KR101099416B1/en active IP Right Grant
- 2010-11-04 CN CN201080017285XA patent/CN102395702B/en active Active
- 2010-11-04 US US13/262,540 patent/US8795489B2/en active Active
- 2010-11-05 TW TW099138182A patent/TW201126002A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2011055537A1 (en) | 2011-05-12 |
JP2011117077A (en) | 2011-06-16 |
JP4793504B2 (en) | 2011-10-12 |
TW201126002A (en) | 2011-08-01 |
CN102395702A (en) | 2012-03-28 |
US20120217157A1 (en) | 2012-08-30 |
TWI360583B (en) | 2012-03-21 |
US8795489B2 (en) | 2014-08-05 |
KR20110113213A (en) | 2011-10-14 |
KR101099416B1 (en) | 2011-12-27 |
EP2402482A4 (en) | 2012-03-28 |
EP2402482B1 (en) | 2014-07-02 |
EP2402482A1 (en) | 2012-01-04 |
CN102395702B (en) | 2013-04-10 |
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