IL289609A - High accuracy of relative defect locations for repeater analysis - Google Patents
High accuracy of relative defect locations for repeater analysisInfo
- Publication number
- IL289609A IL289609A IL289609A IL28960922A IL289609A IL 289609 A IL289609 A IL 289609A IL 289609 A IL289609 A IL 289609A IL 28960922 A IL28960922 A IL 28960922A IL 289609 A IL289609 A IL 289609A
- Authority
- IL
- Israel
- Prior art keywords
- high accuracy
- defect locations
- repeater analysis
- relative defect
- relative
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
- G01N2021/8861—Determining coordinates of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN201741016995 | 2017-05-15 | ||
US201762520893P | 2017-06-16 | 2017-06-16 | |
US15/939,278 US10365232B2 (en) | 2017-05-15 | 2018-03-29 | High accuracy of relative defect locations for repeater analysis |
PCT/US2018/032587 WO2018213195A1 (en) | 2017-05-15 | 2018-05-14 | High accuracy of relative defect locations for repeater analysis |
Publications (2)
Publication Number | Publication Date |
---|---|
IL289609A true IL289609A (en) | 2022-03-01 |
IL289609B IL289609B (en) | 2022-09-01 |
Family
ID=66213394
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL289609A IL289609B (en) | 2017-05-15 | 2018-05-14 | High accuracy of relative defect locations for repeater analysis |
IL270617A IL270617B (en) | 2017-05-15 | 2019-11-13 | High accuracy of relative defect locations for repeater analysis |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL270617A IL270617B (en) | 2017-05-15 | 2019-11-13 | High accuracy of relative defect locations for repeater analysis |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR102347052B1 (en) |
CN (1) | CN110637356B (en) |
IL (2) | IL289609B (en) |
TW (1) | TWI751329B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7203678B2 (en) * | 2019-04-19 | 2023-01-13 | 株式会社日立ハイテク | Defect observation device |
CN111737107B (en) * | 2020-05-15 | 2021-10-26 | 南京航空航天大学 | Repeated defect report detection method based on heterogeneous information network |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7729529B2 (en) | 2004-12-07 | 2010-06-01 | Kla-Tencor Technologies Corp. | Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle |
US8213704B2 (en) | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
US9087367B2 (en) * | 2011-09-13 | 2015-07-21 | Kla-Tencor Corp. | Determining design coordinates for wafer defects |
US9377416B2 (en) * | 2014-05-17 | 2016-06-28 | Kla-Tencor Corp. | Wafer edge detection and inspection |
US9766186B2 (en) * | 2014-08-27 | 2017-09-19 | Kla-Tencor Corp. | Array mode repeater detection |
US10012599B2 (en) * | 2015-04-03 | 2018-07-03 | Kla-Tencor Corp. | Optical die to database inspection |
US9754761B2 (en) * | 2015-05-26 | 2017-09-05 | Kla-Tencor Corporation | High-speed hotspot or defect imaging with a charged particle beam system |
-
2018
- 2018-04-25 TW TW107114041A patent/TWI751329B/en active
- 2018-05-14 CN CN201880032683.5A patent/CN110637356B/en active Active
- 2018-05-14 KR KR1020197036847A patent/KR102347052B1/en active IP Right Grant
- 2018-05-14 IL IL289609A patent/IL289609B/en unknown
-
2019
- 2019-11-13 IL IL270617A patent/IL270617B/en unknown
Also Published As
Publication number | Publication date |
---|---|
TWI751329B (en) | 2022-01-01 |
TW201907152A (en) | 2019-02-16 |
KR20190142418A (en) | 2019-12-26 |
CN110637356A (en) | 2019-12-31 |
CN110637356B (en) | 2023-06-20 |
IL289609B (en) | 2022-09-01 |
IL270617B (en) | 2022-02-01 |
KR102347052B1 (en) | 2022-01-03 |
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