IL178084A0 - Process for producing semi-conductor coated substrate - Google Patents

Process for producing semi-conductor coated substrate

Info

Publication number
IL178084A0
IL178084A0 IL178084A IL17808406A IL178084A0 IL 178084 A0 IL178084 A0 IL 178084A0 IL 178084 A IL178084 A IL 178084A IL 17808406 A IL17808406 A IL 17808406A IL 178084 A0 IL178084 A0 IL 178084A0
Authority
IL
Israel
Prior art keywords
coated substrate
conductor coated
producing semi
semi
producing
Prior art date
Application number
IL178084A
Other versions
IL178084A (en
Original Assignee
Boc Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Inc filed Critical Boc Group Inc
Publication of IL178084A0 publication Critical patent/IL178084A0/en
Publication of IL178084A publication Critical patent/IL178084A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • ing And Chemical Polishing (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemically Coating (AREA)
  • Coating By Spraying Or Casting (AREA)
IL178084A 2004-03-24 2006-09-14 Process for producing semi-conductor coated substrate IL178084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/807,716 US20050215059A1 (en) 2004-03-24 2004-03-24 Process for producing semi-conductor coated substrate
PCT/US2005/009108 WO2005098930A2 (en) 2004-03-24 2005-03-17 Process for producing semi-conductor coated substrate

Publications (2)

Publication Number Publication Date
IL178084A0 true IL178084A0 (en) 2006-12-31
IL178084A IL178084A (en) 2013-09-30

Family

ID=34862056

Family Applications (1)

Application Number Title Priority Date Filing Date
IL178084A IL178084A (en) 2004-03-24 2006-09-14 Process for producing semi-conductor coated substrate

Country Status (8)

Country Link
US (1) US20050215059A1 (en)
EP (1) EP1580292A1 (en)
JP (1) JP4785834B2 (en)
KR (1) KR20050094766A (en)
CN (1) CN101304815A (en)
IL (1) IL178084A (en)
TW (1) TWI382451B (en)
WO (1) WO2005098930A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
JP5393683B2 (en) 2007-09-13 2014-01-22 デル・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Endoprosthesis parts
US9090046B2 (en) * 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
CN109112464A (en) * 2018-09-20 2019-01-01 安徽富乐德科技发展有限公司 A kind of molten preparation method for penetrating layer of semiconductor cleaning chamber ceramics
CN114381683B (en) * 2020-10-20 2024-04-12 中国兵器工业第五九研究所 Preparation method of matrix protective coating

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US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
JPH0598412A (en) * 1991-10-07 1993-04-20 Nippon Steel Corp Method for pretreatment of material to be thermal-sprayed
FI92897C (en) * 1993-07-20 1995-01-10 Planar International Oy Ltd Process for producing a layer structure for electroluminescence components
JP3347555B2 (en) * 1994-12-01 2002-11-20 キヤノン株式会社 Method for manufacturing negative electrode of lithium secondary battery
US5651797A (en) * 1995-08-07 1997-07-29 Joray Corporation Apparatus and method for the immersion cleaning and transport of semiconductor components
US5788304A (en) * 1996-05-17 1998-08-04 Micron Technology, Inc. Wafer carrier having both a rigid structure and resistance to corrosive environments
US5916454A (en) * 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
JPH1146006A (en) * 1997-07-25 1999-02-16 Canon Inc Photovoltaic element and manufacture thereof
US6087191A (en) * 1998-01-22 2000-07-11 International Business Machines Corporation Method for repairing surface defects
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US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
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Also Published As

Publication number Publication date
EP1580292A1 (en) 2005-09-28
KR20050094766A (en) 2005-09-28
TWI382451B (en) 2013-01-11
JP4785834B2 (en) 2011-10-05
JP2007530788A (en) 2007-11-01
WO2005098930A3 (en) 2006-11-09
US20050215059A1 (en) 2005-09-29
CN101304815A (en) 2008-11-12
IL178084A (en) 2013-09-30
WO2005098930A2 (en) 2005-10-20
TW200535926A (en) 2005-11-01

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