HRP20110689B1 - Postupak i uređaj za mjerenje temperature silicija i nadtemperaturnu zaštitu učinskih bipolarnih tranzistora s izoliranom upravljačkom elektrodom - Google Patents

Postupak i uređaj za mjerenje temperature silicija i nadtemperaturnu zaštitu učinskih bipolarnih tranzistora s izoliranom upravljačkom elektrodom

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Publication number
HRP20110689B1
HRP20110689B1 HRP20110689AA HRP20110689A HRP20110689B1 HR P20110689 B1 HRP20110689 B1 HR P20110689B1 HR P20110689A A HRP20110689A A HR P20110689AA HR P20110689 A HRP20110689 A HR P20110689A HR P20110689 B1 HRP20110689 B1 HR P20110689B1
Authority
HR
Croatia
Prior art keywords
temperature
silicon
threshold voltage
circuit
transistor
Prior art date
Application number
HRP20110689AA
Other languages
English (en)
Inventor
Ivan BAHUN
Original Assignee
KONÄŚAR - ELEKTRIÄŚNA VOZILA d.d.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KONÄŚAR - ELEKTRIÄŚNA VOZILA d.d. filed Critical KONÄŚAR - ELEKTRIÄŚNA VOZILA d.d.
Priority to HRP20110689AA priority Critical patent/HRP20110689B1/hr
Priority to PCT/HR2012/000020 priority patent/WO2013045960A2/en
Publication of HRP20110689A2 publication Critical patent/HRP20110689A2/hr
Publication of HRP20110689B1 publication Critical patent/HRP20110689B1/hr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Ovaj izum zasniva se na činjenici da napon praga učinskih bipolarnih tranzistora s izoliranom upravljačkom elektrodom linearno opada s porastom temperature silicija. Napon praga temeljem ovog izuma određuje se detekcijom napona između upravljačkog i učinskog priključka emitera tranzistora. Temperatura silicija određuje se iz tako izmjerenog napona praga na temelju unaprijed određene linearne temperaturne ovisnosti napona praga o temperaturi silicija za određeni tranzistor. Tako izmjereni napon praga koristiti se za izvedbu nadtemperaturne zaštite i za mjerenje temperature silicija u realnom vremenu u pogonskim uvjetima. Crtež 2. prikazuje blok shemu uređaja (1) za mjerenje temperature silicija i nadtemperaturnu zaštitu učinskih bipolarnih tranzistora (20) s izoliranom upravljačkom elektrodom. Uređaj (1) sastoji se od sklopa (2) za detekciju pojave napona između upravljačkog i učinskog priključka emitera tranzistora, sklopa (3) za nadtemperaturnu zaštitu i mjerenje temperature silicija i sklopa (4) za uklapanje i isklapanje tranzistora (20).
HRP20110689AA 2011-09-26 2011-09-26 Postupak i uređaj za mjerenje temperature silicija i nadtemperaturnu zaštitu učinskih bipolarnih tranzistora s izoliranom upravljačkom elektrodom HRP20110689B1 (hr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
HRP20110689AA HRP20110689B1 (hr) 2011-09-26 2011-09-26 Postupak i uređaj za mjerenje temperature silicija i nadtemperaturnu zaštitu učinskih bipolarnih tranzistora s izoliranom upravljačkom elektrodom
PCT/HR2012/000020 WO2013045960A2 (en) 2011-09-26 2012-09-24 Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HRP20110689AA HRP20110689B1 (hr) 2011-09-26 2011-09-26 Postupak i uređaj za mjerenje temperature silicija i nadtemperaturnu zaštitu učinskih bipolarnih tranzistora s izoliranom upravljačkom elektrodom

Publications (2)

Publication Number Publication Date
HRP20110689A2 HRP20110689A2 (hr) 2013-03-31
HRP20110689B1 true HRP20110689B1 (hr) 2016-05-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
HRP20110689AA HRP20110689B1 (hr) 2011-09-26 2011-09-26 Postupak i uređaj za mjerenje temperature silicija i nadtemperaturnu zaštitu učinskih bipolarnih tranzistora s izoliranom upravljačkom elektrodom

Country Status (2)

Country Link
HR (1) HRP20110689B1 (hr)
WO (1) WO2013045960A2 (hr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105556266B (zh) 2013-09-24 2017-10-24 Abb 技术有限公司 用于确定igbt器件的实际结温的方法和装置
CN113884209B (zh) * 2021-09-09 2023-10-10 芯原微电子（成都）有限公司 一种低功耗过温检测电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060792A (en) * 1997-05-20 2000-05-09 International Rectifier Corp. Instantaneous junction temperature detection
US6088208A (en) * 1997-03-31 2000-07-11 Matsushita Electronics Corporation Electronic device, electronic switching apparatus including the same, and production method thereof
JP2008130724A (ja) * 2006-11-20 2008-06-05 Toyota Central R&D Labs Inc 半導体装置
US7548825B2 (en) * 2006-01-13 2009-06-16 Infineon Technologies Ag Method and apparatus for current and temperature measurement in an electronic power circuit
US20090167414A1 (en) * 2007-12-26 2009-07-02 Infineon Technologies Ag Temperature detection for a semiconductor component

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088208A (en) * 1997-03-31 2000-07-11 Matsushita Electronics Corporation Electronic device, electronic switching apparatus including the same, and production method thereof
US6060792A (en) * 1997-05-20 2000-05-09 International Rectifier Corp. Instantaneous junction temperature detection
US7548825B2 (en) * 2006-01-13 2009-06-16 Infineon Technologies Ag Method and apparatus for current and temperature measurement in an electronic power circuit
JP2008130724A (ja) * 2006-11-20 2008-06-05 Toyota Central R&D Labs Inc 半導体装置
US20090167414A1 (en) * 2007-12-26 2009-07-02 Infineon Technologies Ag Temperature detection for a semiconductor component

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FARJAH E., PERRET R.: "Application and analysis of thermosensitive parameters in the case of hybrid power modules", INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING, 1994., CONFERENCE RECORD OF THE 1994 IEEE DENVER, CO, USA 2-6 OCT. 1994, NEW YORK, NY, USA,IEEE, 2 October 1994 (1994-10-02) - 6 October 1994 (1994-10-06), pages 1284 - 1289, XP010124234, ISBN: 978-0-7803-1993-6, DOI: 10.1109/IAS.1994.377584 *

Also Published As

Publication number Publication date
HRP20110689A2 (hr) 2013-03-31
WO2013045960A3 (en) 2014-01-16
WO2013045960A2 (en) 2013-04-04

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