HK1256204A1 - Bipolar transistor on high-resistivity substrate - Google Patents
Bipolar transistor on high-resistivity substrateInfo
- Publication number
- HK1256204A1 HK1256204A1 HK18115304.9A HK18115304A HK1256204A1 HK 1256204 A1 HK1256204 A1 HK 1256204A1 HK 18115304 A HK18115304 A HK 18115304A HK 1256204 A1 HK1256204 A1 HK 1256204A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- bipolar transistor
- resistivity substrate
- resistivity
- substrate
- bipolar
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/536,749 US9048284B2 (en) | 2012-06-28 | 2012-06-28 | Integrated RF front end system |
US13/536,630 US9761700B2 (en) | 2012-06-28 | 2012-06-28 | Bipolar transistor on high-resistivity substrate |
US13/536,662 US20140001608A1 (en) | 2012-06-28 | 2012-06-28 | Semiconductor substrate having high and low-resistivity portions |
US13/536,609 US20140001567A1 (en) | 2012-06-28 | 2012-06-28 | Fet transistor on high-resistivity substrate |
US13/536,743 US20140001602A1 (en) | 2012-06-28 | 2012-06-28 | Device manufacturing using high-resistivity bulk silicon wafer |
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CN (2) | CN104508827B (en) |
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US9761700B2 (en) | 2012-06-28 | 2017-09-12 | Skyworks Solutions, Inc. | Bipolar transistor on high-resistivity substrate |
US9048284B2 (en) | 2012-06-28 | 2015-06-02 | Skyworks Solutions, Inc. | Integrated RF front end system |
US10149347B2 (en) | 2015-01-07 | 2018-12-04 | Skyworks Solutions, Inc. | Front-end integrated circuit for WLAN applications |
KR101666752B1 (en) * | 2015-06-18 | 2016-10-14 | 주식회사 동부하이텍 | Semiconductor device and radio frequency module formed on high resistivity substrate |
KR101666753B1 (en) * | 2015-06-18 | 2016-10-14 | 주식회사 동부하이텍 | Semiconductor device and radio frequency module formed on high resistivity substrate |
KR101692625B1 (en) | 2015-06-18 | 2017-01-03 | 주식회사 동부하이텍 | Semiconductor device and radio frequency module formed on high resistivity substrate |
CN105657809B (en) * | 2016-02-01 | 2020-06-30 | 深圳市至高通信技术发展有限公司 | WLAN transmission system |
KR102482194B1 (en) * | 2018-08-24 | 2022-12-27 | 삼성전기주식회사 | Layout structure of cmos transistor with improved insertion loss |
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DE59107276D1 (en) * | 1990-09-25 | 1996-02-29 | Siemens Ag | Switchable thyristor |
US5973382A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
US5973363A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
US5572040A (en) * | 1993-07-12 | 1996-11-05 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
US5559349A (en) * | 1995-03-07 | 1996-09-24 | Northrop Grumman Corporation | Silicon integrated circuit with passive devices over high resistivity silicon substrate portion, and active devices formed in lower resistivity silicon layer over the substrate |
US6011297A (en) * | 1997-07-18 | 2000-01-04 | Advanced Micro Devices,Inc. | Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage |
JP2001119019A (en) * | 1999-10-19 | 2001-04-27 | Nec Corp | Semiconductor device and manufacturing method therefor |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
KR100408000B1 (en) * | 2001-12-26 | 2003-12-01 | 주식회사 하이닉스반도체 | Method for Forming Semiconductor Device |
US20030234438A1 (en) * | 2002-06-24 | 2003-12-25 | Motorola, Inc. | Integrated circuit structure for mixed-signal RF applications and circuits |
JP3873012B2 (en) * | 2002-07-29 | 2007-01-24 | 株式会社東芝 | Manufacturing method of semiconductor device |
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US7268400B2 (en) * | 2006-01-26 | 2007-09-11 | International Business Machines Corporation | Triple-well CMOS devices with increased latch-up immunity and methods of fabricating same |
US20070246790A1 (en) * | 2006-04-20 | 2007-10-25 | Micrel, Inc. | Transistor process using a double-epitaxial layer for reduced capacitance |
US7596364B2 (en) * | 2006-12-08 | 2009-09-29 | Telefonaktiebolaget L M Ericsson (Publ) | Merged low-noise amplifier and balun |
JP2008085359A (en) * | 2007-11-08 | 2008-04-10 | Mitsubishi Electric Corp | Power semiconductor device |
CN100578790C (en) * | 2008-12-30 | 2010-01-06 | 电子科技大学 | Bcd semiconductor device and manufacturing method thereof |
US8207580B2 (en) * | 2009-05-29 | 2012-06-26 | Power Integrations, Inc. | Power integrated circuit device with incorporated sense FET |
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US8362564B2 (en) * | 2010-08-20 | 2013-01-29 | Intersil Americas Inc. | Isolated epitaxial modulation device |
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TWI595656B (en) | 2017-08-11 |
KR20150034212A (en) | 2015-04-02 |
CN108538834B (en) | 2022-10-11 |
HK1204148A1 (en) | 2015-11-06 |
TWI611586B (en) | 2018-01-11 |
TW201407784A (en) | 2014-02-16 |
WO2014004535A1 (en) | 2014-01-03 |
CN104508827A (en) | 2015-04-08 |
CN108538834A (en) | 2018-09-14 |
KR102070477B1 (en) | 2020-01-29 |
TW201727919A (en) | 2017-08-01 |
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