HK1205047A1 - Reactor and process for producing high-purity silicon - Google Patents

Reactor and process for producing high-purity silicon

Info

Publication number
HK1205047A1
HK1205047A1 HK15105798.6A HK15105798A HK1205047A1 HK 1205047 A1 HK1205047 A1 HK 1205047A1 HK 15105798 A HK15105798 A HK 15105798A HK 1205047 A1 HK1205047 A1 HK 1205047A1
Authority
HK
Hong Kong
Prior art keywords
reactor
producing high
purity silicon
purity
silicon
Prior art date
Application number
HK15105798.6A
Other languages
Chinese (zh)
Inventor
Uwe Kerat
Original Assignee
Schmid Silicon Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Silicon Technology Gmbh filed Critical Schmid Silicon Technology Gmbh
Publication of HK1205047A1 publication Critical patent/HK1205047A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
HK15105798.6A 2011-12-22 2015-06-18 Reactor and process for producing high-purity silicon HK1205047A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011089695A DE102011089695A1 (en) 2011-12-22 2011-12-22 Reactor and process for the production of ultrapure silicon
PCT/EP2012/076747 WO2013093051A2 (en) 2011-12-22 2012-12-21 Reactor and process for producing high-purity silicon

Publications (1)

Publication Number Publication Date
HK1205047A1 true HK1205047A1 (en) 2015-12-11

Family

ID=47522601

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15105798.6A HK1205047A1 (en) 2011-12-22 2015-06-18 Reactor and process for producing high-purity silicon

Country Status (7)

Country Link
EP (1) EP2794087B1 (en)
KR (1) KR102015491B1 (en)
CN (1) CN104245116B (en)
DE (1) DE102011089695A1 (en)
HK (1) HK1205047A1 (en)
TR (1) TR201820500T4 (en)
WO (1) WO2013093051A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015209008A1 (en) 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Process and plant for the decomposition of monosilane
CN109399640A (en) * 2018-12-25 2019-03-01 亚洲硅业（青海）有限公司 Polycrystalline silicon reducing furnace silicon core mounting device and installation method
DE102019209898A1 (en) 2019-07-04 2021-01-07 Schmid Silicon Technology Gmbh Apparatus and method for forming liquid silicon
JP2023008110A (en) 2021-07-05 2023-01-19 信越化学工業株式会社 Apparatus and method for producing polycrystalline silicon rod

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
GB2028289B (en) 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US4643890A (en) * 1984-09-05 1987-02-17 J. M. Huber Corporation Perforated reactor tube for a fluid wall reactor and method of forming a fluid wall
JP2002241120A (en) * 2001-02-15 2002-08-28 Sumitomo Titanium Corp Reaction furnace for manufacturing polycrystalline silicon, and method of manufacturing polycrystalline silicon
DE102004038718A1 (en) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reactor and method for producing silicon
JP5428145B2 (en) * 2006-10-31 2014-02-26 三菱マテリアル株式会社 Trichlorosilane production equipment
DE102009003368B3 (en) * 2009-01-22 2010-03-25 G+R Polysilicon Gmbh Reactor for the production of polycrystalline silicon after the monosilane process
CN102134745B (en) * 2010-04-08 2013-07-10 江苏中能硅业科技发展有限公司 Reactor and system for producing polycrystalline silicon
US9315895B2 (en) * 2010-05-10 2016-04-19 Mitsubishi Materials Corporation Apparatus for producing polycrystalline silicon
EP2423352A1 (en) * 2010-08-24 2012-02-29 Centesil S.L. Thermal shield for silicon production reactors
CN201962075U (en) * 2011-03-28 2011-09-07 四川瑞晟光伏材料有限公司 Polysilicon reducing furnace
CN102249241B (en) * 2011-06-14 2013-04-17 上海森松新能源设备有限公司 Polycrystalline silicon reduction furnace

Also Published As

Publication number Publication date
DE102011089695A1 (en) 2013-06-27
WO2013093051A2 (en) 2013-06-27
WO2013093051A3 (en) 2013-08-22
CN104245116B (en) 2016-02-24
KR102015491B1 (en) 2019-10-21
KR20140107555A (en) 2014-09-04
EP2794087A2 (en) 2014-10-29
EP2794087B1 (en) 2018-11-07
CN104245116A (en) 2014-12-24
TR201820500T4 (en) 2019-01-21

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