HK1152977A1 - Manufacturing method for vapor deposition device and thin-film device - Google Patents
Manufacturing method for vapor deposition device and thin-film deviceInfo
- Publication number
- HK1152977A1 HK1152977A1 HK11106953.9A HK11106953A HK1152977A1 HK 1152977 A1 HK1152977 A1 HK 1152977A1 HK 11106953 A HK11106953 A HK 11106953A HK 1152977 A1 HK1152977 A1 HK 1152977A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- thin
- manufacturing
- vapor deposition
- film
- film device
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0031—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008171113 | 2008-06-30 | ||
PCT/JP2009/060938 WO2010001717A1 (ja) | 2008-06-30 | 2009-06-16 | 蒸着装置及び薄膜デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1152977A1 true HK1152977A1 (en) | 2012-03-16 |
Family
ID=41465820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11106953.9A HK1152977A1 (en) | 2008-06-30 | 2011-07-06 | Manufacturing method for vapor deposition device and thin-film device |
Country Status (8)
Country | Link |
---|---|
US (1) | US20110097511A1 (de) |
EP (1) | EP2302093B1 (de) |
JP (1) | JP4512669B2 (de) |
KR (1) | KR101053387B1 (de) |
CN (1) | CN102076880B (de) |
HK (1) | HK1152977A1 (de) |
TW (1) | TW201005110A (de) |
WO (1) | WO2010001717A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101068278B1 (ko) * | 2008-06-30 | 2011-09-28 | 신크론 컴퍼니 리미티드 | 증착장치 및 박막 디바이스의 제조방법 |
KR101302237B1 (ko) * | 2008-09-05 | 2013-09-02 | 신크론 컴퍼니 리미티드 | 성막방법 및 발유성 기재 |
US10077207B2 (en) * | 2011-11-30 | 2018-09-18 | Corning Incorporated | Optical coating method, apparatus and product |
CN104969099A (zh) | 2012-09-26 | 2015-10-07 | 8797625加拿大有限公司 | 多层光干涉滤片 |
JP5989601B2 (ja) * | 2013-05-29 | 2016-09-07 | 住友重機械工業株式会社 | プラズマ蒸発装置 |
US9275866B2 (en) * | 2014-05-15 | 2016-03-01 | International Business Machines Corporation | Gas cluster reactor for anisotropic film growth |
EP3366804B1 (de) * | 2017-02-22 | 2022-05-11 | Satisloh AG | Vakuumbeschichtungsvorrichtung zur vakuumbeschichtung von substraten, insbesondere von brillenlinsen |
KR102597694B1 (ko) * | 2021-06-23 | 2023-11-03 | 주식회사 아이브이티코리아 | 렌즈 코팅 장치 및 그 제어 방법 |
CN115466927B (zh) * | 2022-08-31 | 2023-07-18 | 安徽其芒光电科技有限公司 | 薄膜沉积装置及薄膜沉积方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59139930A (ja) * | 1983-01-31 | 1984-08-11 | Konishiroku Photo Ind Co Ltd | 蒸着装置 |
JPH04318162A (ja) * | 1991-04-16 | 1992-11-09 | Kobe Steel Ltd | 立方晶窒化硼素被膜の形成方法および形成装置 |
JP3958870B2 (ja) | 1998-06-26 | 2007-08-15 | 大日本印刷株式会社 | 真空成膜装置 |
JP3954043B2 (ja) * | 2004-05-31 | 2007-08-08 | 月島機械株式会社 | プラズマアシスト蒸着装置及びその制御方法 |
JP3986513B2 (ja) * | 2004-08-05 | 2007-10-03 | 株式会社シンクロン | 薄膜形成装置 |
JP4873455B2 (ja) * | 2006-03-16 | 2012-02-08 | 株式会社シンクロン | 光学薄膜形成方法および装置 |
-
2009
- 2009-06-16 EP EP09773295A patent/EP2302093B1/de not_active Not-in-force
- 2009-06-16 US US13/001,724 patent/US20110097511A1/en not_active Abandoned
- 2009-06-16 CN CN2009801246222A patent/CN102076880B/zh not_active Expired - Fee Related
- 2009-06-16 JP JP2009546603A patent/JP4512669B2/ja active Active
- 2009-06-16 WO PCT/JP2009/060938 patent/WO2010001717A1/ja active Application Filing
- 2009-06-16 KR KR1020107028580A patent/KR101053387B1/ko not_active IP Right Cessation
- 2009-06-16 TW TW098120054A patent/TW201005110A/zh not_active IP Right Cessation
-
2011
- 2011-07-06 HK HK11106953.9A patent/HK1152977A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102076880A (zh) | 2011-05-25 |
KR20110039421A (ko) | 2011-04-18 |
JPWO2010001717A1 (ja) | 2011-12-15 |
EP2302093B1 (de) | 2012-10-31 |
TW201005110A (en) | 2010-02-01 |
EP2302093A4 (de) | 2011-11-30 |
CN102076880B (zh) | 2012-11-21 |
US20110097511A1 (en) | 2011-04-28 |
WO2010001717A1 (ja) | 2010-01-07 |
TWI345590B (de) | 2011-07-21 |
EP2302093A1 (de) | 2011-03-30 |
KR101053387B1 (ko) | 2011-08-01 |
JP4512669B2 (ja) | 2010-07-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20180616 |