HK1144590A1 - Sputtering apparatus and film forming method - Google Patents
Sputtering apparatus and film forming methodInfo
- Publication number
- HK1144590A1 HK1144590A1 HK10111009.4A HK10111009A HK1144590A1 HK 1144590 A1 HK1144590 A1 HK 1144590A1 HK 10111009 A HK10111009 A HK 10111009A HK 1144590 A1 HK1144590 A1 HK 1144590A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- film forming
- forming method
- sputtering apparatus
- sputtering
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007299137A JP5464800B2 (en) | 2007-11-19 | 2007-11-19 | Sputtering apparatus and film forming method |
PCT/JP2008/069732 WO2009066551A1 (en) | 2007-11-19 | 2008-10-30 | Sputtering apparatus and film forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1144590A1 true HK1144590A1 (en) | 2011-02-25 |
Family
ID=40667377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK10111009.4A HK1144590A1 (en) | 2007-11-19 | 2010-11-26 | Sputtering apparatus and film forming method |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5464800B2 (en) |
KR (1) | KR20100080912A (en) |
CN (1) | CN101861409B (en) |
HK (1) | HK1144590A1 (en) |
WO (1) | WO2009066551A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102839352A (en) * | 2011-06-21 | 2012-12-26 | 无锡尚德太阳能电力有限公司 | Film deposition device and method |
CN103060759A (en) * | 2011-10-21 | 2013-04-24 | 鸿富锦精密工业(深圳)有限公司 | Coating device |
CN103074584A (en) * | 2011-10-25 | 2013-05-01 | 鸿富锦精密工业(深圳)有限公司 | Film coating apparatus |
CN104131258B (en) * | 2014-06-17 | 2017-01-11 | 北京大学深圳研究生院 | Ion film-plating device and ion film-plating method |
JP6476261B1 (en) * | 2017-10-17 | 2019-02-27 | 株式会社神戸製鋼所 | Deposition method |
CN115772652A (en) * | 2022-12-05 | 2023-03-10 | 唐山斯腾光电科技有限公司 | Sputtering coating equipment for processing infrared window piece |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW358964B (en) * | 1996-11-21 | 1999-05-21 | Applied Materials Inc | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
US6599399B2 (en) * | 1997-03-07 | 2003-07-29 | Applied Materials, Inc. | Sputtering method to generate ionized metal plasma using electron beams and magnetic field |
JP2002020861A (en) * | 2000-07-04 | 2002-01-23 | Canon Inc | Method and system for film deposition |
US6551471B1 (en) * | 1999-11-30 | 2003-04-22 | Canon Kabushiki Kaisha | Ionization film-forming method and apparatus |
JP2002053955A (en) * | 2000-08-04 | 2002-02-19 | Canon Inc | Apparatus and method for ionized film deposition |
JP3950429B2 (en) * | 2003-03-20 | 2007-08-01 | 独立行政法人科学技術振興機構 | Compound thin film forming apparatus and compound thin film forming method |
CN2734774Y (en) * | 2004-07-28 | 2005-10-19 | 雷卫武 | Double-ion-beam co-sputtering deposition atomic-layer nano film device |
JP2007248562A (en) * | 2006-03-14 | 2007-09-27 | Shincron:Kk | Optical component and its manufacturing method |
-
2007
- 2007-11-19 JP JP2007299137A patent/JP5464800B2/en not_active Expired - Fee Related
-
2008
- 2008-10-30 KR KR1020107008698A patent/KR20100080912A/en not_active IP Right Cessation
- 2008-10-30 CN CN2008801165610A patent/CN101861409B/en not_active Expired - Fee Related
- 2008-10-30 WO PCT/JP2008/069732 patent/WO2009066551A1/en active Application Filing
-
2010
- 2010-11-26 HK HK10111009.4A patent/HK1144590A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP5464800B2 (en) | 2014-04-09 |
JP2009120925A (en) | 2009-06-04 |
WO2009066551A1 (en) | 2009-05-28 |
CN101861409B (en) | 2012-11-28 |
KR20100080912A (en) | 2010-07-13 |
CN101861409A (en) | 2010-10-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20171030 |