HK1128061A1 - Projection optical system, exposure device and method, mask and display manufacturing method - Google Patents
Projection optical system, exposure device and method, mask and display manufacturing methodInfo
- Publication number
- HK1128061A1 HK1128061A1 HK09105342.5A HK09105342A HK1128061A1 HK 1128061 A1 HK1128061 A1 HK 1128061A1 HK 09105342 A HK09105342 A HK 09105342A HK 1128061 A1 HK1128061 A1 HK 1128061A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- optical system
- projection optical
- region
- scanning direction
- mask
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0804—Catadioptric systems using two curved mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006039446 | 2006-02-16 | ||
JP2007014631 | 2007-01-25 | ||
PCT/JP2007/051974 WO2007094198A1 (fr) | 2006-02-16 | 2007-02-06 | Systeme optique de projection, dispositif et procede d'exposition, procede de fabrication d'affichage, masque et procede de fabrication de masque |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1128061A1 true HK1128061A1 (en) | 2009-10-16 |
Family
ID=38371384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09105342.5A HK1128061A1 (en) | 2006-02-16 | 2009-06-16 | Projection optical system, exposure device and method, mask and display manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (2) | US8305556B2 (fr) |
EP (1) | EP1986220A4 (fr) |
JP (2) | JP5453806B2 (fr) |
KR (1) | KR101415411B1 (fr) |
CN (2) | CN101976018B (fr) |
HK (1) | HK1128061A1 (fr) |
TW (1) | TWI424287B (fr) |
WO (1) | WO2007094198A1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8208198B2 (en) * | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US20080151365A1 (en) * | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
JP5769356B2 (ja) | 2004-05-17 | 2015-08-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 中間像を有するカタジオプトリック投影対物レンズ |
US8917378B2 (en) * | 2007-12-20 | 2014-12-23 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area |
JP5392549B2 (ja) * | 2009-05-12 | 2014-01-22 | 株式会社ニコン | 露光方法及び装置、並びにデバイス製造方法 |
WO2010131485A1 (fr) * | 2009-05-15 | 2010-11-18 | 株式会社ニコン | Appareil mobile, appareil de transmission d'energie, appareil d'exposition, et procede de fabrication de dispositif |
DE102009045217B3 (de) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Katadioptrisches Projektionsobjektiv |
US8461556B2 (en) * | 2010-09-08 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Using beam blockers to perform a patterned implant of a workpiece |
CN103246158B (zh) * | 2012-02-14 | 2015-03-25 | 旺宏电子股份有限公司 | 掩模及其图案配置方法与曝光方法 |
DE102017105580A1 (de) * | 2016-11-04 | 2018-05-09 | Carl Zeiss Meditec Ag | Operationsmikroskop |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6442655A (en) * | 1987-08-11 | 1989-02-14 | Nec Corp | Structure of reticle |
JPH05161588A (ja) | 1991-12-16 | 1993-06-29 | Mitsubishi Electric Corp | 食器洗浄機の水位検出装置 |
US5729331A (en) | 1993-06-30 | 1998-03-17 | Nikon Corporation | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
US6157497A (en) * | 1993-06-30 | 2000-12-05 | Nikon Corporation | Exposure apparatus |
JP3348467B2 (ja) | 1993-06-30 | 2002-11-20 | 株式会社ニコン | 露光装置及び方法 |
JPH0766113A (ja) * | 1993-08-31 | 1995-03-10 | Sanyo Electric Co Ltd | レチクル及び位置合わせ用バーニアの形成方法 |
JP3477838B2 (ja) * | 1993-11-11 | 2003-12-10 | 株式会社ニコン | 走査型露光装置及び露光方法 |
JP4132095B2 (ja) * | 1995-03-14 | 2008-08-13 | 株式会社ニコン | 走査型露光装置 |
DE19757074A1 (de) * | 1997-12-20 | 1999-06-24 | Zeiss Carl Fa | Projektionsbelichtungsanlage und Belichtungsverfahren |
JP4110606B2 (ja) | 1998-02-12 | 2008-07-02 | 株式会社ニコン | 走査型露光装置および露光方法 |
JP2000231184A (ja) * | 1999-02-12 | 2000-08-22 | Toshiba Corp | アレイ基板とその製造方法 |
JP2000331909A (ja) * | 1999-05-19 | 2000-11-30 | Nikon Corp | 走査型露光装置 |
JP2001109169A (ja) | 1999-10-13 | 2001-04-20 | Nikon Corp | 露光装置、露光方法およびマスク |
JP2001168003A (ja) * | 1999-12-06 | 2001-06-22 | Olympus Optical Co Ltd | 露光装置 |
EP1107064A3 (fr) | 1999-12-06 | 2004-12-29 | Olympus Optical Co., Ltd. | Appareil d'exposition |
KR100827874B1 (ko) * | 2000-05-22 | 2008-05-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 장치의 제조 방법, 노광 방법, 마이크로 장치의 제조 방법, 및 디바이스의 제조 방법 |
TWI232348B (en) * | 2001-12-26 | 2005-05-11 | Pentax Corp | Projection aligner |
JP2003248299A (ja) * | 2002-02-26 | 2003-09-05 | Toshiba Corp | マスク基板およびその製造方法 |
US6898025B2 (en) * | 2002-06-04 | 2005-05-24 | Pentax Corporation | Projection aligner and optical system therefor |
JP2004247487A (ja) * | 2003-02-13 | 2004-09-02 | Canon Inc | 走査露光装置 |
JP2004327660A (ja) * | 2003-04-24 | 2004-11-18 | Nikon Corp | 走査型投影露光装置、露光方法及びデバイス製造方法 |
JP2004335864A (ja) * | 2003-05-09 | 2004-11-25 | Nikon Corp | 露光装置及び露光方法 |
TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
JP2005039211A (ja) * | 2003-06-30 | 2005-02-10 | Canon Inc | 投影光学系、露光装置及びデバイスの製造方法 |
JP2005024941A (ja) * | 2003-07-03 | 2005-01-27 | Nikon Corp | 投影光学系、投影露光装置、及び投影露光方法 |
US6973375B2 (en) * | 2004-02-12 | 2005-12-06 | Mykrolis Corporation | System and method for flow monitoring and control |
TWI271602B (en) * | 2004-03-31 | 2007-01-21 | Fujifilm Corp | A correcting method and an exposure method of exposure device, and an exposure device |
KR101264936B1 (ko) * | 2004-06-04 | 2013-05-15 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
EP1768172B1 (fr) * | 2004-06-23 | 2010-02-10 | Nikon Corporation | Appareil d'exposition par projection |
JP2006039446A (ja) | 2004-07-30 | 2006-02-09 | Ricoh Co Ltd | 画像形成方法、静電荷像現像用トナー |
JP2007014631A (ja) | 2005-07-08 | 2007-01-25 | Sanyo Product Co Ltd | 遊技機 |
JP4984810B2 (ja) * | 2006-02-16 | 2012-07-25 | 株式会社ニコン | 露光方法、露光装置及びフォトマスク |
KR101387834B1 (ko) * | 2006-03-20 | 2014-04-22 | 가부시키가이샤 니콘 | 반사굴절 투영광학계, 반사굴절 광학장치, 주사노광장치,마이크로 디바이스의 제조방법 |
-
2007
- 2007-02-06 JP JP2008500449A patent/JP5453806B2/ja active Active
- 2007-02-06 CN CN2010105224975A patent/CN101976018B/zh active Active
- 2007-02-06 EP EP07708092A patent/EP1986220A4/fr not_active Withdrawn
- 2007-02-06 CN CN2007800055642A patent/CN101385123B/zh active Active
- 2007-02-06 WO PCT/JP2007/051974 patent/WO2007094198A1/fr active Application Filing
- 2007-02-06 KR KR1020087013006A patent/KR101415411B1/ko active IP Right Grant
- 2007-02-12 TW TW096105002A patent/TWI424287B/zh active
-
2008
- 2008-08-12 US US12/190,260 patent/US8305556B2/en active Active
-
2009
- 2009-06-16 HK HK09105342.5A patent/HK1128061A1/xx not_active IP Right Cessation
-
2012
- 2012-09-26 US US13/627,526 patent/US8867019B2/en not_active Expired - Fee Related
-
2013
- 2013-04-08 JP JP2013080572A patent/JP2013178535A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2007094198A1 (fr) | 2007-08-23 |
KR101415411B1 (ko) | 2014-07-04 |
US8867019B2 (en) | 2014-10-21 |
TW200732868A (en) | 2007-09-01 |
TWI424287B (zh) | 2014-01-21 |
EP1986220A1 (fr) | 2008-10-29 |
US20130021589A1 (en) | 2013-01-24 |
CN101385123A (zh) | 2009-03-11 |
JPWO2007094198A1 (ja) | 2009-07-02 |
EP1986220A4 (fr) | 2010-08-18 |
KR20080101867A (ko) | 2008-11-21 |
JP2013178535A (ja) | 2013-09-09 |
CN101976018A (zh) | 2011-02-16 |
CN101385123B (zh) | 2010-12-15 |
US20090021712A1 (en) | 2009-01-22 |
JP5453806B2 (ja) | 2014-03-26 |
US8305556B2 (en) | 2012-11-06 |
CN101976018B (zh) | 2013-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20210208 |