HK1086637A1 - Environmental system including vaccum scavange for an immersion lithography apparatus - Google Patents

Environmental system including vaccum scavange for an immersion lithography apparatus

Info

Publication number
HK1086637A1
HK1086637A1 HK06106368.5A HK06106368A HK1086637A1 HK 1086637 A1 HK1086637 A1 HK 1086637A1 HK 06106368 A HK06106368 A HK 06106368A HK 1086637 A1 HK1086637 A1 HK 1086637A1
Authority
HK
Hong Kong
Prior art keywords
scavange
system including
lithography apparatus
immersion lithography
environmental system
Prior art date
Application number
HK06106368.5A
Other languages
English (en)
Chinese (zh)
Inventor
安德魯．
．哈澤頓
邁克．索格德
Original Assignee
株式會社尼康
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式會社尼康 filed Critical 株式會社尼康
Publication of HK1086637A1 publication Critical patent/HK1086637A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70816—Bearings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK06106368.5A 2003-04-10 2006-06-02 Environmental system including vaccum scavange for an immersion lithography apparatus HK1086637A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US46211203P 2003-04-10 2003-04-10
US48447603P 2003-07-01 2003-07-01
PCT/IB2004/002704 WO2004090634A2 (en) 2003-04-10 2004-03-29 Environmental system including vaccum scavange for an immersion lithography apparatus

Publications (1)

Publication Number Publication Date
HK1086637A1 true HK1086637A1 (en) 2006-09-22

Family

ID=33162259

Family Applications (8)

Application Number Title Priority Date Filing Date
HK06106368.5A HK1086637A1 (en) 2003-04-10 2006-06-02 Environmental system including vaccum scavange for an immersion lithography apparatus
HK14103957.9A HK1190798A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK14103956.0A HK1190797A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK14107893.7A HK1194486A1 (en) 2003-04-10 2014-08-01 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK15109292.9A HK1208736A1 (en) 2003-04-10 2015-09-22 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK16104744.3A HK1216781A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16104745.2A HK1216782A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16111263.9A HK1223161A1 (zh) 2003-04-10 2016-09-26 包括用於沉浸光刻裝置的真空清除的環境系統

Family Applications After (7)

Application Number Title Priority Date Filing Date
HK14103957.9A HK1190798A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK14103956.0A HK1190797A1 (en) 2003-04-10 2014-04-24 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK14107893.7A HK1194486A1 (en) 2003-04-10 2014-08-01 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK15109292.9A HK1208736A1 (en) 2003-04-10 2015-09-22 Environmental system including vacuum scavenge for an immersion lithography apparatus
HK16104744.3A HK1216781A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16104745.2A HK1216782A1 (zh) 2003-04-10 2016-04-26 包括用於沉浸光刻裝置的真空掃氣的環境系統
HK16111263.9A HK1223161A1 (zh) 2003-04-10 2016-09-26 包括用於沉浸光刻裝置的真空清除的環境系統

Country Status (8)

Country Link
US (13) US7321415B2 (ja)
EP (7) EP3232271A1 (ja)
JP (10) JP4775256B2 (ja)
KR (13) KR101469405B1 (ja)
CN (7) CN103439864B (ja)
HK (8) HK1086637A1 (ja)
SG (6) SG10201604762UA (ja)
WO (1) WO2004090634A2 (ja)

Families Citing this family (202)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI251127B (en) 2002-11-12 2006-03-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101349876B (zh) 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100470367C (zh) 2002-11-12 2009-03-18 Asml荷兰有限公司 光刻装置和器件制造方法
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
EP1571695A4 (en) 2002-12-10 2008-10-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
CN104678715B (zh) 2003-02-26 2017-05-17 株式会社尼康 曝光方法以及器件制造方法
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
DE602004020200D1 (de) 2003-04-07 2009-05-07 Nippon Kogaku Kk Belichtungsgerät und verfahren zur herstellung einer vorrichtung
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
EP3232271A1 (en) 2003-04-10 2017-10-18 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
WO2004093160A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
EP3062152B1 (en) 2003-04-10 2017-12-20 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
SG194260A1 (en) 2003-04-11 2013-11-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
SG10201803122UA (en) 2003-04-11 2018-06-28 Nikon Corp Immersion lithography apparatus and device manufacturing method
ATE542167T1 (de) 2003-04-17 2012-02-15 Nikon Corp Lithographisches immersionsgerät
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW201806001A (zh) 2003-05-23 2018-02-16 尼康股份有限公司 曝光裝置及元件製造方法
TWI612557B (zh) 2003-05-23 2018-01-21 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
CN100541717C (zh) 2003-05-28 2009-09-16 株式会社尼康 曝光方法、曝光装置以及器件制造方法
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
CN101436003B (zh) 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2853943B1 (en) 2003-07-08 2016-11-16 Nikon Corporation Wafer table for immersion lithography
JP4515385B2 (ja) 2003-07-09 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
EP1643543B1 (en) 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7738074B2 (en) * 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3346485A1 (en) 2003-07-25 2018-07-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
CN102323724B (zh) 2003-07-28 2014-08-13 株式会社尼康 液浸曝光装置及其制造方法、曝光装置、器件制造方法
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101343655B1 (ko) 2003-08-21 2013-12-20 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4474652B2 (ja) * 2003-08-26 2010-06-09 株式会社ニコン 光学素子及び露光装置
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2005022616A1 (ja) 2003-08-29 2005-03-10 Nikon Corporation 露光装置及びデバイス製造方法
KR101288140B1 (ko) 2003-09-03 2013-07-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
KR101421398B1 (ko) 2003-09-29 2014-07-18 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
JP4319188B2 (ja) 2003-10-08 2009-08-26 株式会社蔵王ニコン 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
US7352433B2 (en) * 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005041276A1 (ja) 2003-10-28 2005-05-06 Nikon Corporation 露光装置、露光方法、デバイスの製造方法
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
JP2005150533A (ja) * 2003-11-18 2005-06-09 Canon Inc 露光装置
TWI605315B (zh) 2003-12-03 2017-11-11 Nippon Kogaku Kk Exposure device, exposure method, and device manufacturing method
KR101681852B1 (ko) 2003-12-15 2016-12-01 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4774735B2 (ja) 2004-01-05 2011-09-14 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
ATE459898T1 (de) 2004-01-20 2010-03-15 Zeiss Carl Smt Ag Belichtungsvorrichtung und messeinrichtung für eine projektionslinse
JP4319189B2 (ja) 2004-01-26 2009-08-26 株式会社ニコン 露光装置及びデバイス製造方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP4506674B2 (ja) 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
DE102004013886A1 (de) 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
TWI606485B (zh) 2004-03-25 2017-11-21 尼康股份有限公司 曝光裝置、曝光方法、及元件製造方法
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005104195A1 (ja) 2004-04-19 2005-11-03 Nikon Corporation 露光装置及びデバイス製造方法
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4845880B2 (ja) 2004-06-04 2011-12-28 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学結像系の像品質測定システム
KR101422964B1 (ko) 2004-06-09 2014-07-24 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20070026603A (ko) 2004-06-10 2007-03-08 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101699965B1 (ko) 2004-06-10 2017-01-25 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP1756663B1 (en) * 2004-06-17 2015-12-16 Nikon Corporation Fluid pressure compensation for immersion lithography lens
US7426014B2 (en) 2004-07-01 2008-09-16 Nikon Corporation Dynamic fluid control system for immersion lithography
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4894515B2 (ja) 2004-07-12 2012-03-14 株式会社ニコン 露光装置、デバイス製造方法、及び液体検出方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070048164A (ko) 2004-08-18 2007-05-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100539019C (zh) * 2004-09-17 2009-09-09 株式会社尼康 曝光装置、曝光方法以及器件制造方法
KR101618493B1 (ko) 2004-09-17 2016-05-04 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI538013B (zh) * 2004-11-18 2016-06-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101939525B1 (ko) * 2004-12-15 2019-01-16 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조방법
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060147821A1 (en) 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124359A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4830303B2 (ja) * 2005-01-27 2011-12-07 Ｊｓｒ株式会社 液浸露光用液体の製造方法およびリサイクル方法
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR101427056B1 (ko) 2005-01-31 2014-08-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101140755B1 (ko) 2005-02-10 2012-05-03 에이에스엠엘 네델란즈 비.브이. 침지 액체, 노광 장치, 및 노광 프로세스
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
JP4262252B2 (ja) * 2005-03-02 2009-05-13 キヤノン株式会社 露光装置
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
KR101396620B1 (ko) 2005-04-25 2014-05-16 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4708860B2 (ja) * 2005-05-23 2011-06-22 キヤノン株式会社 液浸露光装置
WO2006130338A1 (en) * 2005-06-01 2006-12-07 Nikon Corporation Immersion fluid containment system and method for immersion lithography
US7385673B2 (en) * 2005-06-10 2008-06-10 International Business Machines Corporation Immersion lithography with equalized pressure on at least projection optics component and wafer
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007005731A (ja) * 2005-06-27 2007-01-11 Jsr Corp 液浸露光用液体およびその精製方法
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5243957B2 (ja) * 2005-08-16 2013-07-24 カール・ツァイス・エスエムティー・ゲーエムベーハー 液浸リソグラフィー用オブジェクティブ
US7580112B2 (en) * 2005-08-25 2009-08-25 Nikon Corporation Containment system for immersion fluid in an immersion lithography apparatus
US20090130604A1 (en) * 2005-08-29 2009-05-21 Mitsui Chemicals, Inc. Solution for immersion exposure and immersion exposure method
KR101371874B1 (ko) * 2005-10-05 2014-03-07 가부시키가이샤 니콘 노광 장치 및 노광 방법
US7411658B2 (en) * 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US7782442B2 (en) 2005-12-06 2010-08-24 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device producing method
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
KR20080088579A (ko) 2005-12-28 2008-10-02 가부시키가이샤 니콘 노광 장치 및 노광 방법, 디바이스 제조 방법
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1986223A4 (en) 2006-02-16 2010-08-25 Nikon Corp EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
KR20080101865A (ko) 2006-02-16 2008-11-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US8908145B2 (en) * 2006-02-21 2014-12-09 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7709813B2 (en) * 2006-04-03 2010-05-04 Nikon Corporation Incidence surfaces and optical windows that are solvophobic to immersion liquids
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
TWI439813B (zh) * 2006-05-10 2014-06-01 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US8144305B2 (en) * 2006-05-18 2012-03-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656502B2 (en) * 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US8634053B2 (en) * 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7866637B2 (en) 2007-01-26 2011-01-11 Asml Netherlands B.V. Humidifying apparatus, lithographic apparatus and humidifying method
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8011377B2 (en) * 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7576833B2 (en) 2007-06-28 2009-08-18 Nikon Corporation Gas curtain type immersion lithography tool using porous material for fluid removal
JP4533416B2 (ja) * 2007-09-25 2010-09-01 キヤノン株式会社 露光装置およびデバイス製造方法
NL1036009A1 (nl) * 2007-10-05 2009-04-07 Asml Netherlands Bv An Immersion Lithography Apparatus.
WO2009076598A1 (en) * 2007-12-12 2009-06-18 Children's Hospital & Research Center At Oakland Use of unsaturated sphingosine compounds as chemotherapeutic agents for the treatment of cancer
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
NL2003392A (en) 2008-09-17 2010-03-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
TWI457714B (zh) * 2008-09-17 2014-10-21 Asml Netherlands Bv 微影裝置及其操作方法
US8047354B2 (en) 2008-09-26 2011-11-01 Corning Incorporated Liquid-ejecting bearings for transport of glass sheets
EP2172766A1 (en) * 2008-10-03 2010-04-07 ASML Netherlands B.V. Lithographic apparatus and humidity measurement system
US8511461B2 (en) * 2008-11-25 2013-08-20 Corning Incorporated Gas-ejecting bearings for transport of glass sheets
NL2003638A (en) 2008-12-03 2010-06-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2004497A (en) 2009-05-01 2010-11-02 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
JP5016705B2 (ja) 2009-06-09 2012-09-05 エーエスエムエル ネザーランズ ビー．ブイ． 流体ハンドリング構造
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
US9120700B2 (en) * 2010-03-26 2015-09-01 Corning Incorporated Non-contact etching of moving glass sheets
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
NL2008199A (en) * 2011-02-28 2012-08-29 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
US8715518B2 (en) 2011-10-12 2014-05-06 Intermolecular, Inc. Gas barrier with vent ring for protecting a surface region from liquid
US8728334B2 (en) 2011-11-29 2014-05-20 Intermolecular, Inc. Dynamic gas flow control of touchless reactor cells
US8617409B2 (en) 2011-11-22 2013-12-31 Intermolecular, Inc. Magnetically levitated gas cell for touchless site-isolated wet processing
US9016289B2 (en) 2011-11-28 2015-04-28 Intermolecular, Inc. System and method for reducing particles and marks on wafer surface following reactor processing
US8690136B2 (en) 2011-11-29 2014-04-08 Intermolecular, Inc. Internal rinsing in touchless interstitial processing
US8883607B2 (en) 2011-12-27 2014-11-11 Intermolecular, Inc. Full wafer processing by multiple passes through a combinatorial reactor
US9268231B2 (en) * 2012-04-10 2016-02-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
NL2014893A (en) * 2014-07-04 2016-03-31 Asml Netherlands Bv Lithographic apparatus and a method of manufacturing a device using a lithographic apparatus.
US9405287B1 (en) * 2015-07-22 2016-08-02 Applied Materials, Inc. Apparatus and method for optical calibration of wafer placement by a robot
CN109143768A (zh) * 2018-09-13 2019-01-04 杭州行开科技有限公司 一种适于激光投影的裸眼3d显示***
CN116802565A (zh) * 2021-02-03 2023-09-22 应用材料公司 用于稳定投射设备的气动控制挠曲***
US11543754B1 (en) * 2021-06-16 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Extractor piping on outermost sidewall of immersion hood apparatus

Family Cites Families (228)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US181859A (en) * 1876-09-05 Improvement in warming floors
US273683A (en) * 1883-03-06 John f
US279795A (en) * 1883-06-19 Paper-weight
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
DE2102922C3 (de) * 1971-01-22 1978-08-24 Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar Anordnung zum selbsttätigen Fokussieren auf in optischen Geräten zu betrachtende Objekte
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS5822299A (ja) * 1981-07-29 1983-02-09 日産自動車株式会社 フオ−クリフト
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
US4441808A (en) * 1982-11-15 1984-04-10 Tre Semiconductor Equipment Corp. Focusing device for photo-exposure system
DD242880A1 (de) * 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) * 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
US4837443A (en) 1987-10-15 1989-06-06 The Perkin-Elmer Corporation Guard ring for a differentially pumped seal apparatus
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3374413B2 (ja) * 1992-07-20 2003-02-04 株式会社ニコン 投影露光装置、投影露光方法、並びに集積回路製造方法
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3212199B2 (ja) 1993-10-04 2001-09-25 旭硝子株式会社 平板型陰極線管
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08136475A (ja) 1994-11-14 1996-05-31 Kawasaki Steel Corp 板状材の表面観察装置
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH09148235A (ja) * 1995-11-22 1997-06-06 Nikon Corp 走査型投影露光装置
US5707535A (en) 1996-01-11 1998-01-13 Harris; Ronald B. Vacuum loadable divided phase separator for liquid/solid separation
JPH103039A (ja) 1996-06-14 1998-01-06 Nikon Corp 反射屈折光学系
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
JP3227595B2 (ja) 1996-08-20 2001-11-12 東京エレクトロン株式会社 現像処理方法及び現像処理装置
WO1998009278A1 (en) 1996-08-26 1998-03-05 Digital Papyrus Technologies Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP3728613B2 (ja) 1996-12-06 2005-12-21 株式会社ニコン 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
EP1197801B1 (en) 1996-12-24 2005-12-28 ASML Netherlands B.V. Lithographic device with two object holders
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US20010003028A1 (en) 1997-09-19 2001-06-07 Nikon Corporation Scanning Exposure Method
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JPH11260791A (ja) 1998-03-10 1999-09-24 Toshiba Mach Co Ltd 半導体ウエハの乾燥方法および乾燥装置
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000076707A (ja) * 1998-08-31 2000-03-14 Sony Corp 光学記録媒体作製用原盤記録装置
US6538719B1 (en) * 1998-09-03 2003-03-25 Nikon Corporation Exposure apparatus and exposure method, and device and method for producing the same
EP1052552A3 (en) 1999-04-19 2003-03-12 ASML Netherlands B.V. Gas bearings for use with vacuum chambers and their application in lithographic projection apparatus
JP3653198B2 (ja) 1999-07-16 2005-05-25 アルプス電気株式会社 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置
JP2001118773A (ja) 1999-10-18 2001-04-27 Nikon Corp ステージ装置及び露光装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
TWI264617B (en) 1999-12-21 2006-10-21 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP3630054B2 (ja) 2000-01-11 2005-03-16 松下電器産業株式会社 プリント配線板の製造装置およびそれを用いたプリント配線板の製造方法
TW579664B (en) 2000-01-11 2004-03-11 Matsushita Electric Ind Co Ltd Apparatus and method for manufacturing printed circuit board
US7000622B2 (en) 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
US6488040B1 (en) * 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
JPWO2002025711A1 (ja) * 2000-09-21 2004-01-29 株式会社ニコン 結像特性の計測方法及び露光方法
JP2002134384A (ja) * 2000-10-20 2002-05-10 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
US20020080339A1 (en) 2000-12-25 2002-06-27 Nikon Corporation Stage apparatus, vibration control method and exposure apparatus
US6731372B2 (en) 2001-03-27 2004-05-04 Nikon Corporation Multiple chamber fluid mount
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US7032658B2 (en) 2002-01-31 2006-04-25 Smart Drilling And Completion, Inc. High power umbilicals for electric flowline immersion heating of produced hydrocarbons
JP2003124180A (ja) 2001-10-16 2003-04-25 Ebara Corp 基板処理装置
US6811613B2 (en) 2001-11-26 2004-11-02 Tokyo Electron Limited Coating film forming apparatus
US6764386B2 (en) 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber
CN100389480C (zh) * 2002-01-29 2008-05-21 株式会社尼康 曝光装置和曝光方法
JP2005522020A (ja) 2002-02-06 2005-07-21 アクリオン・エルエルシー 基板の毛管乾燥
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
JP2004029063A (ja) * 2002-06-21 2004-01-29 Adtec Engineeng Co Ltd 密着型露光装置
KR20050035890A (ko) 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7520285B2 (en) 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
EP1420298B1 (en) * 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
TWI251127B (en) 2002-11-12 2006-03-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299B1 (en) * 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN100470367C (zh) * 2002-11-12 2009-03-18 Asml荷兰有限公司 光刻装置和器件制造方法
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101349876B (zh) 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
EP1420300B1 (en) * 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
EP1571695A4 (en) 2002-12-10 2008-10-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
JP4184346B2 (ja) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上のスポットを照射するための方法及び装置における液体除去
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
KR100971440B1 (ko) 2002-12-19 2010-07-21 코닌클리케 필립스 일렉트로닉스 엔.브이. 레이어 상의 스폿을 조사하기 위한 방법 및 장치
EP1584089B1 (en) 2002-12-19 2006-08-02 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
JP4352930B2 (ja) 2003-02-26 2009-10-28 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
CN104678715B (zh) 2003-02-26 2017-05-17 株式会社尼康 曝光方法以及器件制造方法
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR101345474B1 (ko) * 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
DE602004020200D1 (de) 2003-04-07 2009-05-07 Nippon Kogaku Kk Belichtungsgerät und verfahren zur herstellung einer vorrichtung
WO2004093159A2 (en) * 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
WO2004093160A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
EP3062152B1 (en) 2003-04-10 2017-12-20 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
EP3232271A1 (en) 2003-04-10 2017-10-18 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
SG10201803122UA (en) 2003-04-11 2018-06-28 Nikon Corp Immersion lithography apparatus and device manufacturing method
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
SG194260A1 (en) 2003-04-11 2013-11-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
ATE542167T1 (de) 2003-04-17 2012-02-15 Nikon Corp Lithographisches immersionsgerät
JP2004321968A (ja) * 2003-04-25 2004-11-18 Nec Corp 廃棄物処理システムおよび廃棄物処理方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1477856A1 (en) 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI612557B (zh) 2003-05-23 2018-01-21 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
JP2004349645A (ja) 2003-05-26 2004-12-09 Sony Corp 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法
DE10324477A1 (de) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
CN101436003B (zh) 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
KR20060027832A (ko) 2003-07-01 2006-03-28 가부시키가이샤 니콘 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법
US6919647B2 (en) * 2003-07-03 2005-07-19 American Semiconductor, Inc. SRAM cell
WO2005006417A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101288140B1 (ko) 2003-09-03 2013-07-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
US20050069499A1 (en) * 2003-09-25 2005-03-31 Moshe Arkin Foamable compositions, processes of preparing same and uses thereof
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP1519230A1 (en) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4515209B2 (ja) 2003-10-02 2010-07-28 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP4513299B2 (ja) 2003-10-02 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
JP2005159322A (ja) 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
WO2005050324A2 (en) 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
JP2007516613A (ja) 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー 少なくとも１つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP2005183744A (ja) 2003-12-22 2005-07-07 Nikon Corp 露光装置及びデバイス製造方法
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102207608B (zh) 2004-01-14 2013-01-02 卡尔蔡司Smt有限责任公司 反射折射投影物镜
KR101099913B1 (ko) 2004-01-16 2011-12-29 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
ATE459898T1 (de) 2004-01-20 2010-03-15 Zeiss Carl Smt Ag Belichtungsvorrichtung und messeinrichtung für eine projektionslinse
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US20070165198A1 (en) 2004-02-13 2007-07-19 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1721201A1 (en) 2004-02-18 2006-11-15 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1756663B1 (en) 2004-06-17 2015-12-16 Nikon Corporation Fluid pressure compensation for immersion lithography lens
US7057702B2 (en) * 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7426014B2 (en) 2004-07-01 2008-09-16 Nikon Corporation Dynamic fluid control system for immersion lithography
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7265813B2 (en) 2004-12-28 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
US8089610B2 (en) 2012-01-03
US8456610B2 (en) 2013-06-04
EP2667253A1 (en) 2013-11-27
CN103383528B (zh) 2016-05-04
CN103439864B (zh) 2016-05-11
US9658537B2 (en) 2017-05-23
CN103383528A (zh) 2013-11-06
JP2016021079A (ja) 2016-02-04
US20110037959A1 (en) 2011-02-17
WO2004090634A3 (en) 2007-03-01
KR20140140135A (ko) 2014-12-08
US9244362B2 (en) 2016-01-26
US20180259860A1 (en) 2018-09-13
US8836914B2 (en) 2014-09-16
KR101469405B1 (ko) 2014-12-10
US20060114435A1 (en) 2006-06-01
JP2015029153A (ja) 2015-02-12
SG2014015184A (en) 2015-06-29
US20090180096A1 (en) 2009-07-16
KR20120061976A (ko) 2012-06-13
KR20130012977A (ko) 2013-02-05
CN103383527B (zh) 2015-10-28
HK1190797A1 (en) 2014-07-11
HK1216782A1 (zh) 2016-12-02
KR101364928B1 (ko) 2014-02-19
JP5949876B2 (ja) 2016-07-13
KR20120082930A (ko) 2012-07-24
CN1774668B (zh) 2010-04-14
US7321415B2 (en) 2008-01-22
KR101886027B1 (ko) 2018-09-06
KR101364889B1 (ko) 2014-02-19
JP2014007412A (ja) 2014-01-16
WO2004090634A2 (en) 2004-10-21
US7355676B2 (en) 2008-04-08
SG141426A1 (en) 2008-04-28
JP5692304B2 (ja) 2015-04-01
KR101280628B1 (ko) 2013-07-01
KR20140054408A (ko) 2014-05-08
US20060033899A1 (en) 2006-02-16
JP6137276B2 (ja) 2017-05-31
CN105700301A (zh) 2016-06-22
KR101506431B1 (ko) 2015-03-26
EP2950148B1 (en) 2016-09-21
EP2667252A1 (en) 2013-11-27
CN101061429A (zh) 2007-10-24
KR20130012976A (ko) 2013-02-05
KR101599182B1 (ko) 2016-03-03
EP3232271A1 (en) 2017-10-18
US20070132974A1 (en) 2007-06-14
EP1611485B1 (en) 2015-06-03
HK1190798A1 (en) 2014-07-11
EP2950147B1 (en) 2017-04-26
KR101369016B1 (ko) 2014-02-28
US20120262684A1 (en) 2012-10-18
CN101061429B (zh) 2015-02-04
EP2717098B1 (en) 2015-05-13
US20170235237A1 (en) 2017-08-17
KR101319152B1 (ko) 2013-10-17
JP2018028705A (ja) 2018-02-22
SG141425A1 (en) 2008-04-28
EP1611485A2 (en) 2006-01-04
EP2950148A1 (en) 2015-12-02
US20140320831A1 (en) 2014-10-30
CN104597717B (zh) 2017-09-05
CN1774668A (zh) 2006-05-17
SG10201604762UA (en) 2016-08-30
US20070103662A1 (en) 2007-05-10
KR20180089562A (ko) 2018-08-08
EP2717098A1 (en) 2014-04-09
JP5541309B2 (ja) 2014-07-09
EP1611485A4 (en) 2008-10-29
JP5550188B2 (ja) 2014-07-16
US20070247603A1 (en) 2007-10-25
KR20110089377A (ko) 2011-08-05
JP2014060457A (ja) 2014-04-03
JP4775256B2 (ja) 2011-09-21
CN104597717A (zh) 2015-05-06
US9977350B2 (en) 2018-05-22
HK1208736A1 (en) 2016-03-11
US20060028632A1 (en) 2006-02-09
EP2667253B1 (en) 2015-06-10
JP2007528115A (ja) 2007-10-04
JP2010183085A (ja) 2010-08-19
EP2667252B1 (en) 2015-05-20
JP6332394B2 (ja) 2018-05-30
US7456930B2 (en) 2008-11-25
KR20130103811A (ko) 2013-09-24
CN103439864A (zh) 2013-12-11
JP5745611B2 (ja) 2015-07-08
KR101121655B1 (ko) 2012-03-09
SG2014015176A (en) 2015-06-29
HK1223161A1 (zh) 2017-07-21
KR101724117B1 (ko) 2017-04-06
KR20170040370A (ko) 2017-04-12
KR20150092341A (ko) 2015-08-12
CN103383527A (zh) 2013-11-06
JP2017016159A (ja) 2017-01-19
EP2950147A1 (en) 2015-12-02
HK1216781A1 (zh) 2016-12-02
US20160085159A1 (en) 2016-03-24
KR101178754B1 (ko) 2012-09-07
HK1194486A1 (en) 2014-10-17
US8810768B2 (en) 2014-08-19
CN105700301B (zh) 2018-05-25
JP5152219B2 (ja) 2013-02-27
JP2012129563A (ja) 2012-07-05
KR20120039754A (ko) 2012-04-25
JP2011166166A (ja) 2011-08-25
SG2012050829A (en) 2015-07-30
KR20050113673A (ko) 2005-12-02

Similar Documents

Publication Publication Date Title
HK1086637A1 (en) Environmental system including vaccum scavange for an immersion lithography apparatus
HK1253211A1 (zh) 包括用於沉浸式光刻裝置的傳送區的環境系統
GB2408383B (en) Pattern-definition device for maskless particle-beam exposure apparatus
HK1152117A1 (en) Exposure apparatus
GB0201047D0 (en) Apparatus for three dimensional photography
SG125101A1 (en) Level sensor for lithographic apparatus
SG115701A1 (en) Lithographic apparatus
EP1700366A4 (en) CHARGING SYSTEM FOR ELECTRONIC DEVICES
EG23841A (en) Method, system and apparatus for exposing workbookranges as data sources
EP1640885A4 (en) METHOD FOR GENERATING A PARALLEL PROCESSING SYSTEM
SG118222A1 (en) Lithographic apparatus
GB2405209B (en) Methods and apparatus for imaging systems
AU2003223360A8 (en) Mid-frame for an imaging apparatus
EP1713138A4 (en) BATTERY LOCKING MECHANISM FOR AN ELECTRONIC DEVICE
DE602004020164D1 (de) Vorrichtung zur Vakuumlaminierung
GB0317798D0 (en) Call point for an alarm system
TWI347450B (en) Exposing apparatus
GB0217073D0 (en) Apparatus for carrying an object
GB2406657B (en) Object positioning guide for photographing apparatus
AU2003295095A1 (en) Control apparatus for imaging device
GB0413612D0 (en) An apparatus
GB0412745D0 (en) Apparatus for closing an aperture
GB0407151D0 (en) Apparatus for marking an object
TW580122U (en) Super-cooling apparatus for an air-conditioning system
TW572006U (en) Positioning structure for fast removing apparatus

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200327