HK1048832B - 真空電弧汽相沉積設備及真空電弧汽相沉積方法 - Google Patents

真空電弧汽相沉積設備及真空電弧汽相沉積方法

Info

Publication number
HK1048832B
HK1048832B HK03100983.6A HK03100983A HK1048832B HK 1048832 B HK1048832 B HK 1048832B HK 03100983 A HK03100983 A HK 03100983A HK 1048832 B HK1048832 B HK 1048832B
Authority
HK
Hong Kong
Prior art keywords
vapor deposition
vacuum arc
arc vapor
deposition method
deposition apparatus
Prior art date
Application number
HK03100983.6A
Other languages
English (en)
Other versions
HK1048832A1 (en
Inventor
三宅浩二
Original Assignee
日新電機株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日新電機株式會社 filed Critical 日新電機株式會社
Publication of HK1048832A1 publication Critical patent/HK1048832A1/xx
Publication of HK1048832B publication Critical patent/HK1048832B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
HK03100983.6A 2001-03-29 2003-02-11 真空電弧汽相沉積設備及真空電弧汽相沉積方法 HK1048832B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001095815A JP4085593B2 (ja) 2001-03-29 2001-03-29 真空アーク蒸着装置

Publications (2)

Publication Number Publication Date
HK1048832A1 HK1048832A1 (en) 2003-04-17
HK1048832B true HK1048832B (zh) 2005-03-18

Family

ID=18949820

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03100983.6A HK1048832B (zh) 2001-03-29 2003-02-11 真空電弧汽相沉積設備及真空電弧汽相沉積方法

Country Status (6)

Country Link
US (2) US6692623B2 (zh)
EP (1) EP1245694B1 (zh)
JP (1) JP4085593B2 (zh)
KR (1) KR100496464B1 (zh)
DE (1) DE60201044T2 (zh)
HK (1) HK1048832B (zh)

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US20040134770A1 (en) * 2002-11-15 2004-07-15 Petersen John H Ionic plasma deposition apparatus
EP1571904A2 (en) * 2002-12-18 2005-09-14 Ionic Fusion Corporartion Ionic plasma deposition of anti-microbial surfaces and the anti-microbial surfaces resulting therefrom
US8066854B2 (en) * 2002-12-18 2011-11-29 Metascape Llc Antimicrobial coating methods
JP4045953B2 (ja) * 2002-12-27 2008-02-13 日新電機株式会社 真空アーク蒸着装置
US7509734B2 (en) * 2003-03-03 2009-03-31 United Technologies Corporation Repairing turbine element
JP4438326B2 (ja) * 2003-06-13 2010-03-24 日新電機株式会社 偏向磁場型真空アーク蒸着装置
US20080003377A1 (en) * 2006-06-30 2008-01-03 The Board Of Regents Of The Nevada System Of Higher Ed. On Behalf Of The Unlv Transparent vacuum system
JP4660452B2 (ja) * 2006-09-30 2011-03-30 株式会社フェローテック 拡径管型プラズマ生成装置
US7872244B2 (en) * 2007-08-08 2011-01-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4955027B2 (ja) * 2009-04-02 2012-06-20 クリーン・テクノロジー株式会社 排ガス処理装置における磁場によるプラズマの制御方法
ES2513866T3 (es) 2009-05-13 2014-10-27 Sio2 Medical Products, Inc. Revestimiento e inspección de recipientes
JP5644085B2 (ja) * 2009-06-10 2014-12-24 富士通株式会社 成膜装置及び成膜方法
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
KR101036676B1 (ko) * 2009-07-31 2011-05-23 한국염색기술연구소 석탄 화력발전 보일러 설비용 염색폐수 슬러지의 연료화장치 및 그 방법
JP5606777B2 (ja) * 2010-04-22 2014-10-15 株式会社フェローテック プラズマ流生成方法、プラズマ処理方法、プラズマ発生装置及びプラズマ処理装置
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN102776479A (zh) * 2011-05-09 2012-11-14 无锡尚德太阳能电力有限公司 一种薄膜制备装置和方法
US9153422B2 (en) 2011-08-02 2015-10-06 Envaerospace, Inc. Arc PVD plasma source and method of deposition of nanoimplanted coatings
AU2012318242A1 (en) 2011-11-11 2013-05-30 Sio2 Medical Products, Inc. Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CA2887352A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
WO2014071061A1 (en) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Coating inspection method
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
JP6382830B2 (ja) 2012-11-30 2018-08-29 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 医療シリンジ、カートリッジ等上でのｐｅｃｖｄ堆積の均一性制御
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CN105392916B (zh) 2013-03-11 2019-03-08 Sio2医药产品公司 涂布包装材料
WO2014144926A1 (en) 2013-03-15 2014-09-18 Sio2 Medical Products, Inc. Coating method
US9721760B2 (en) * 2013-05-16 2017-08-01 Applied Materials, Inc. Electron beam plasma source with reduced metal contamination
US9564297B2 (en) 2013-05-16 2017-02-07 Applied Materials, Inc. Electron beam plasma source with remote radical source
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
CN116982977A (zh) 2015-08-18 2023-11-03 Sio2医药产品公司 具有低氧气传输速率的药物和其他包装
DE102020215892A1 (de) * 2020-12-15 2022-06-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung zur Ausbildung von amorphen Kohlenstoffschichten auf Bauteiloberflächen mit reduzierter Oberflächenrauheit

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US4724058A (en) 1984-08-13 1988-02-09 Vac-Tec Systems, Inc. Method and apparatus for arc evaporating large area targets
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
US5279723A (en) 1992-07-30 1994-01-18 As Represented By The United States Department Of Energy Filtered cathodic arc source
US5480527A (en) 1994-04-25 1996-01-02 Vapor Technologies, Inc. Rectangular vacuum-arc plasma source
KR100230279B1 (ko) 1997-03-31 1999-11-15 윤종용 음극 아크 방전을 이용한 박막 증착장치
JP3449198B2 (ja) 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
JP3514127B2 (ja) 1998-07-17 2004-03-31 三菱マテリアル株式会社 粗大ドロップレットの少ない金属化合物薄膜の形成を可能とするアーク式イオンプレーティング装置
JP2001003160A (ja) 1999-06-18 2001-01-09 Nissin Electric Co Ltd 膜形成方法およびその装置

Also Published As

Publication number Publication date
EP1245694A1 (en) 2002-10-02
US6866753B2 (en) 2005-03-15
US6692623B2 (en) 2004-02-17
US20020157609A1 (en) 2002-10-31
JP2002294433A (ja) 2002-10-09
DE60201044D1 (de) 2004-09-30
HK1048832A1 (en) 2003-04-17
KR100496464B1 (ko) 2005-06-20
DE60201044T2 (de) 2004-12-30
EP1245694B1 (en) 2004-08-25
KR20020077216A (ko) 2002-10-11
JP4085593B2 (ja) 2008-05-14
US20040045812A1 (en) 2004-03-11

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20120328