HK1002790A1 - Voltage supplies for flash memory - Google Patents

Voltage supplies for flash memory

Info

Publication number: HK1002790A1
Authority: HK; Hong Kong
Prior art keywords: flash memory; voltage supplies; supplies; voltage; flash
Prior art date: 1994-10-19

Application number

HK98101502A

Inventor

Jahanshir J Javanifard

Kimberley D Meister

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-10-19

Filing date

1998-02-26

Publication date

1998-09-18

1998-02-26 Application filed by Intel Corp filed Critical Intel Corp

1998-09-18 Publication of HK1002790A1 publication Critical patent/HK1002790A1/en

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Read Only Memory (AREA)

HK98101502A 1994-10-19 1998-02-26 Voltage supplies for flash memory HK1002790A1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US32670294A	1994-10-19	1994-10-19
PCT/US1995/013235 WO1996013037A1 (en)	1994-10-19	1995-10-18	Voltage supplies for flash memory

Publications (1)

Publication Number	Publication Date
HK1002790A1 true HK1002790A1 (en)	1998-09-18

Family

ID=23273304

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
HK98101502A HK1002790A1 (en)	1994-10-19	1998-02-26	Voltage supplies for flash memory

Country Status (9)

Country	Link
US (1)	US5663918A (en)
EP (1)	EP0792505B1 (en)
JP (1)	JPH10512081A (en)
KR (1)	KR100299254B1 (en)
CN (1)	CN1109347C (en)
AU (1)	AU3895395A (en)
DE (1)	DE69525554T2 (en)
HK (1)	HK1002790A1 (en)
WO (1)	WO1996013037A1 (en)

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US5841703A (en) *	1996-12-31	1998-11-24	Intel Corporation	Method and apparatus for removal of VT drop in the output diode of charge pumps
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US6166960A (en) *	1999-09-24	2000-12-26	Microchip Technology, Incorporated	Method, system and apparatus for determining that a programming voltage level is sufficient for reliably programming an eeprom
US6421213B1 (en) *	2000-03-17	2002-07-16	Advanced Technology Materials, Inc.	Method and apparatus for detecting a tamper condition and isolating a circuit therefrom
US6597603B2 (en)	2001-11-06	2003-07-22	Atmel Corporation	Dual mode high voltage power supply for providing increased speed in programming during testing of low voltage non-volatile memories
JP3933467B2 (en) *	2001-12-27	2007-06-20	株式会社東芝	Voltage detection circuit control device, memory control device having the same device, and memory card having the same device
KR100997699B1 (en) *	2002-03-05	2010-12-02	가부시키가이샤 한도오따이 에네루기 켄큐쇼	Transistor
KR100415092B1 (en) *	2002-05-13	2004-01-13	주식회사 하이닉스반도체	A semiconductor memory device with a mode register, and method for controlling deep power down mode thereof
US6822899B1 (en) *	2002-12-23	2004-11-23	Cypress Semiconductor Corporation	Method of protecting flash memory from data corruption during fast power down events
KR100543938B1 (en) *	2003-08-22	2006-01-23	주식회사 하이닉스반도체	Driving circuit for non volatile dynamic random access menory and its method
DE10361718A1 (en) *	2003-08-22	2005-03-17	Hynix Semiconductor Inc., Ichon	Apparatus and method for controlling nonvolatile DRAM
KR101044796B1 (en) *	2004-01-13	2011-06-29	삼성전자주식회사	Portable data storage apparatus
US7196958B2 (en) *	2004-08-31	2007-03-27	Micron Technology, Inc.	Power efficient memory and cards
KR100695891B1 (en) *	2004-11-17	2007-03-19	삼성전자주식회사	Apparatus and method for selective lock-out based on operation mode of integrated circuit
KR101080171B1 (en) *	2005-09-22	2011-11-07	주식회사 하이닉스반도체	internal voltage driver
US7212463B2 (en) *	2005-09-23	2007-05-01	Sigma Tel, Inc.	Method and system of operating mode detection
DE102006021746A1 (en) *	2006-05-10	2007-11-15	Robert Bosch Gmbh	storage device
KR100845525B1 (en) *	2006-08-07	2008-07-10	삼성전자주식회사	Memory card system, method transferring data thereof, and semiconductor memory device
US7639540B2 (en) *	2007-02-16	2009-12-29	Mosaid Technologies Incorporated	Non-volatile semiconductor memory having multiple external power supplies
US20090240863A1 (en) *	2007-10-23	2009-09-24	Psion Teklogix Inc.	Distributed power regulation
JP5331405B2 (en) *	2008-08-01	2013-10-30	株式会社東芝	Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system
US20100188880A1 (en) *	2009-01-23	2010-07-29	Analog Devices, Inc.	Power switching for portable applications
CN102484471B (en)	2009-10-30	2015-04-01	株式会社半导体能源研究所	Driver circuit, display device including the driver circuit, and electronic device including the display device
JP5933897B2 (en)	2011-03-18	2016-06-15	株式会社半導体エネルギー研究所	Semiconductor device
KR101112042B1 (en)	2011-03-22	2012-02-24	삼성전자주식회사	Portable data storage apparatus
US9230613B2 (en)	2012-04-16	2016-01-05	Nanya Technology Corp.	Power up detecting system
KR102084547B1 (en) *	2013-01-18	2020-03-05	삼성전자주식회사	Nonvolatile memory device, memory system having the same, external power controlling method thereof
US9704581B2 (en) *	2014-12-27	2017-07-11	Intel Corporation	Voltage ramping detection
US9536575B2 (en) *	2015-01-14	2017-01-03	Macronix International Co., Ltd.	Power source for memory circuitry
KR102280433B1 (en) *	2015-09-23	2021-07-22	삼성전자주식회사	Power supply circuit and storage device having the same
US11355173B2 (en)	2019-12-30	2022-06-07	Taiwan Semiconductor Manufacturing Company, Ltd.	Power supply generator assist

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JPS60176121A (en) *	1984-02-22	1985-09-10	Toshiba Corp	Voltage drop circuit
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JP2780365B2 (en) *	1989-08-14	1998-07-30	日本電気株式会社	Substrate potential generation circuit
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US5157278A (en) *	1990-10-30	1992-10-20	Samsung Electronics Co., Ltd.	Substrate voltage generator for semiconductor device
US5245572A (en) *	1991-07-30	1993-09-14	Intel Corporation	Floating gate nonvolatile memory with reading while writing capability
US5428568A (en) *	1991-10-30	1995-06-27	Mitsubishi Denki Kabushiki Kaisha	Electrically erasable and programmable non-volatile memory device and a method of operating the same
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US5313429A (en) *	1992-02-14	1994-05-17	Catalyst Semiconductor, Inc.	Memory circuit with pumped voltage for erase and program operations
FR2688952B1 (en) *	1992-03-18	1994-04-29	Sgs Thomson Microelectronics	REFERENCE VOLTAGE GENERATION DEVICE.
US5267218A (en) *	1992-03-31	1993-11-30	Intel Corporation	Nonvolatile memory card with a single power supply input
KR960006373B1 (en) *	1992-10-31	1996-05-15	삼성전자주식회사	Word line driving circuit of semiconductor memory device
US5311480A (en) *	1992-12-16	1994-05-10	Texas Instruments Incorporated	Method and apparatus for EEPROM negative voltage wordline decoding
US5339272A (en) *	1992-12-21	1994-08-16	Intel Corporation	Precision voltage reference
US5301161A (en) *	1993-01-12	1994-04-05	Intel Corporation	Circuitry for power supply voltage detection and system lockout for a nonvolatile memory
JPH0729386A (en) *	1993-07-13	1995-01-31	Hitachi Ltd	Flash member and microcomputer
US5553030A (en) *	1993-09-10	1996-09-03	Intel Corporation	Method and apparatus for controlling the output voltage provided by a charge pump circuit
US5414669A (en) *	1993-09-10	1995-05-09	Intel Corporation	Method and apparatus for programming and erasing flash EEPROM memory arrays utilizing a charge pump circuit
US5422586A (en) *	1993-09-10	1995-06-06	Intel Corporation	Apparatus for a two phase bootstrap charge pump
US5430402A (en) *	1993-09-10	1995-07-04	Intel Corporation	Method and apparatus for providing selectable sources of voltage

1995
- 1995-10-18 WO PCT/US1995/013235 patent/WO1996013037A1/en active IP Right Grant
- 1995-10-18 CN CN95196684A patent/CN1109347C/en not_active Expired - Lifetime
- 1995-10-18 JP JP8514005A patent/JPH10512081A/en active Pending
- 1995-10-18 DE DE69525554T patent/DE69525554T2/en not_active Expired - Lifetime
- 1995-10-18 AU AU38953/95A patent/AU3895395A/en not_active Abandoned
- 1995-10-18 KR KR1019970702545A patent/KR100299254B1/en not_active IP Right Cessation
- 1995-10-18 EP EP95938246A patent/EP0792505B1/en not_active Expired - Lifetime
- 1995-12-19 US US08/575,177 patent/US5663918A/en not_active Expired - Lifetime
1998
- 1998-02-26 HK HK98101502A patent/HK1002790A1/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP0792505A1 (en)	1997-09-03
US5663918A (en)	1997-09-02
KR100299254B1 (en)	2001-09-03
DE69525554T2 (en)	2002-06-20
WO1996013037A1 (en)	1996-05-02
CN1169204A (en)	1997-12-31
DE69525554D1 (en)	2002-03-28
AU3895395A (en)	1996-05-15
EP0792505B1 (en)	2001-07-04
CN1109347C (en)	2003-05-21
EP0792505A4 (en)	1999-04-07
JPH10512081A (en)	1998-11-17

Legal Events

Date	Code	Title	Description
2004-12-15	PF	Patent in force
2013-05-10	PC	Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)	Effective date: 20121018

Publication	Publication Date	Title
HK1002790A1 (en)	1998-09-18	Voltage supplies for flash memory
AU2765895A (en)	1996-01-04	Flash memory based main memory
GB2348991B (en)	2002-12-31	Flash memory system
EP0594294A3 (en)	1994-07-06	Power supplies for flash eeprom memory cells
EP0702372A3 (en)	1996-06-12	A voltage reference for a ferroelectric IT/IC based memory
EP0712135A3 (en)	1996-07-03	Nonvolatile semiconductor memory
GB9301463D0 (en)	1993-03-17	Current memory
GB2341019B (en)	2000-09-06	Voltage supply system
HK1010072A1 (en)	1999-06-11	Flash memory
GB2306718B (en)	2000-01-19	Flash memory device
EP0974145A4 (en)	2001-04-18	Power supply detection scheme for flash memory
HUP9900687A3 (en)	2002-11-28	Voltage regulator arrangement
EP0872847A4 (en)	1999-01-13	Memory
EP1008899A4 (en)	2003-08-13	Flash unit
GB2306717B (en)	2000-01-19	Flash memory device
GB9423035D0 (en)	1995-01-04	Voltage boost circuit for a memory device
GB2301211B (en)	1998-05-27	Voltage boosting circuits
EP0700050A3 (en)	1997-07-23	Multiple page memory
GB2294345B (en)	1996-12-11	Voltage boosting circuit
GB9517787D0 (en)	1995-11-01	Current memory
GB9614271D0 (en)	1996-09-04	Current memory
GB2320807B (en)	2001-09-19	Flash memory cell
GB9517785D0 (en)	1995-11-01	Current memory
GB9517791D0 (en)	1995-11-01	Current memory
GB2296588B (en)	1998-09-09	Flash memory device