GB965289A - Diffused junction type silicon rectifier units - Google Patents

Diffused junction type silicon rectifier units

Info

Publication number
GB965289A
GB965289A GB3325861A GB3325861A GB965289A GB 965289 A GB965289 A GB 965289A GB 3325861 A GB3325861 A GB 3325861A GB 3325861 A GB3325861 A GB 3325861A GB 965289 A GB965289 A GB 965289A
Authority
GB
United Kingdom
Prior art keywords
wafer
silicon rectifier
diffused junction
type silicon
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3325861A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB965289A publication Critical patent/GB965289A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

965,289. Semi-conductor rectifiers. TOKYO SHIBAURA ELECTRIC CO. Ltd. Sept. 15, 1961 [Sept. 16, 1960], No. 33258/61. Heading H1K. A diffused junction silicon rectifier consists of a circular silicon wafer 1 soldered between concentric copper electrodes 2, 3 of a diameter at least equal to that of the wafer and of a thickness equal to at least onesixth of the wafer diameter. The arrangement distributes thermal stresses symmetrically. The silicon wafer may comprise boron and phosphorus and may be nickel-plated before being soldered with a lead-silver solder to the copper electrodes, which may be gold-plated.
GB3325861A 1960-09-16 1961-09-15 Diffused junction type silicon rectifier units Expired GB965289A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3810660 1960-09-16

Publications (1)

Publication Number Publication Date
GB965289A true GB965289A (en) 1964-07-29

Family

ID=12516204

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3325861A Expired GB965289A (en) 1960-09-16 1961-09-15 Diffused junction type silicon rectifier units

Country Status (3)

Country Link
DE (1) DE1218621B (en)
GB (1) GB965289A (en)
NL (1) NL269308A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319136A (en) * 1964-09-08 1967-05-09 Dunlee Corp Rectifier
US3995310A (en) * 1974-12-23 1976-11-30 General Electric Company Semiconductor assembly including mounting plate with recessed periphery
GB2251725A (en) * 1990-12-19 1992-07-15 Fuji Electric Co Ltd Soldered electrodes for semiconducter chips

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4425389B4 (en) * 1994-07-19 2007-12-27 Robert Bosch Gmbh Rectifier arrangement and method for producing an electrically and thermally conductive connection and arrangement for carrying out the method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2863105A (en) * 1955-11-10 1958-12-02 Hoffman Electronics Corp Rectifying device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319136A (en) * 1964-09-08 1967-05-09 Dunlee Corp Rectifier
US3995310A (en) * 1974-12-23 1976-11-30 General Electric Company Semiconductor assembly including mounting plate with recessed periphery
GB2251725A (en) * 1990-12-19 1992-07-15 Fuji Electric Co Ltd Soldered electrodes for semiconducter chips
DE4142066A1 (en) * 1990-12-19 1992-07-30 Fuji Electric Co Ltd ELECTRODE CONSTRUCTION OF A SEMICONDUCTOR ELEMENT
US5381038A (en) * 1990-12-19 1995-01-10 Fuji Electric Co., Ltd. Semiconductor device having passivation protrusions defining electrical bonding area
GB2251725B (en) * 1990-12-19 1995-01-25 Fuji Electric Co Ltd Semiconductor element including an electrode construction

Also Published As

Publication number Publication date
DE1218621B (en) 1966-06-08
NL269308A (en)

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