GB9618620D0 - A method of forming a layer - Google Patents

A method of forming a layer

Info

Publication number
GB9618620D0
GB9618620D0 GBGB9618620.0A GB9618620A GB9618620D0 GB 9618620 D0 GB9618620 D0 GB 9618620D0 GB 9618620 A GB9618620 A GB 9618620A GB 9618620 D0 GB9618620 D0 GB 9618620D0
Authority
GB
United Kingdom
Prior art keywords
forming
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GBGB9618620.0A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electrotech Equipments Ltd
Original Assignee
Electrotech Equipments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electrotech Equipments Ltd filed Critical Electrotech Equipments Ltd
Priority to GBGB9618620.0A priority Critical patent/GB9618620D0/en
Publication of GB9618620D0 publication Critical patent/GB9618620D0/en
Priority to DE19737825A priority patent/DE19737825A1/en
Priority to GB9718654A priority patent/GB2317270A/en
Priority to KR1019970045688A priority patent/KR19980024318A/en
Priority to JP24095197A priority patent/JPH10177938A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
GBGB9618620.0A 1996-09-06 1996-09-06 A method of forming a layer Pending GB9618620D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB9618620.0A GB9618620D0 (en) 1996-09-06 1996-09-06 A method of forming a layer
DE19737825A DE19737825A1 (en) 1996-09-06 1997-08-29 Process for producing a coating
GB9718654A GB2317270A (en) 1996-09-06 1997-09-04 Forming a layer on a pre-stressed semiconductor wafer
KR1019970045688A KR19980024318A (en) 1996-09-06 1997-09-04 How to Form a Layer on a Semiconductor Wafer
JP24095197A JPH10177938A (en) 1996-09-06 1997-09-05 Method of forming layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9618620.0A GB9618620D0 (en) 1996-09-06 1996-09-06 A method of forming a layer

Publications (1)

Publication Number Publication Date
GB9618620D0 true GB9618620D0 (en) 1996-10-16

Family

ID=10799521

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9618620.0A Pending GB9618620D0 (en) 1996-09-06 1996-09-06 A method of forming a layer
GB9718654A Withdrawn GB2317270A (en) 1996-09-06 1997-09-04 Forming a layer on a pre-stressed semiconductor wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9718654A Withdrawn GB2317270A (en) 1996-09-06 1997-09-04 Forming a layer on a pre-stressed semiconductor wafer

Country Status (4)

Country Link
JP (1) JPH10177938A (en)
KR (1) KR19980024318A (en)
DE (1) DE19737825A1 (en)
GB (2) GB9618620D0 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6184157B1 (en) * 1998-06-01 2001-02-06 Sharp Laboratories Of America, Inc. Stress-loaded film and method for same
US6800571B2 (en) 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
AT411856B (en) * 2000-10-16 2004-06-25 Datacon Semiconductor Equip METHOD FOR PRODUCING AN ADHESIVE CONNECTION FROM A DISC-SHAPED SEMICONDUCTOR SUBSTRATE TO A FLEXIBLE ADHESIVE TRANSPORT CARRIER, AND DEVICE FOR CARRYING OUT THIS METHOD
GB0029570D0 (en) * 2000-12-05 2001-01-17 Trikon Holdings Ltd Electrostatic clamp
KR100809335B1 (en) 2006-09-28 2008-03-05 삼성전자주식회사 Semiconductor device and method of fabricating the same
US20080116521A1 (en) 2006-11-16 2008-05-22 Samsung Electronics Co., Ltd CMOS Integrated Circuits that Utilize Insulating Layers with High Stress Characteristics to Improve NMOS and PMOS Transistor Carrier Mobilities and Methods of Forming Same
US7534678B2 (en) 2007-03-27 2009-05-19 Samsung Electronics Co., Ltd. Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby
US7902082B2 (en) 2007-09-20 2011-03-08 Samsung Electronics Co., Ltd. Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers
US7923365B2 (en) 2007-10-17 2011-04-12 Samsung Electronics Co., Ltd. Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same

Also Published As

Publication number Publication date
JPH10177938A (en) 1998-06-30
GB9718654D0 (en) 1997-11-05
KR19980024318A (en) 1998-07-06
GB2317270A (en) 1998-03-18
DE19737825A1 (en) 1998-03-12

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