GB9616221D0 - A method of etch depth control in sintered workpieces - Google Patents

A method of etch depth control in sintered workpieces

Info

Publication number
GB9616221D0
GB9616221D0 GBGB9616221.9A GB9616221A GB9616221D0 GB 9616221 D0 GB9616221 D0 GB 9616221D0 GB 9616221 A GB9616221 A GB 9616221A GB 9616221 D0 GB9616221 D0 GB 9616221D0
Authority
GB
United Kingdom
Prior art keywords
depth control
etch depth
sintered workpieces
workpieces
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GBGB9616221.9A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Surface Technology Systems Ltd
Original Assignee
Surface Technology Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surface Technology Systems Ltd filed Critical Surface Technology Systems Ltd
Priority to GBGB9616221.9A priority Critical patent/GB9616221D0/en
Publication of GB9616221D0 publication Critical patent/GB9616221D0/en
Priority to PCT/GB1997/001941 priority patent/WO1998005605A1/en
Priority to AU35536/97A priority patent/AU3553697A/en
Pending legal-status Critical Current

Links

GBGB9616221.9A 1996-08-01 1996-08-01 A method of etch depth control in sintered workpieces Pending GB9616221D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB9616221.9A GB9616221D0 (en) 1996-08-01 1996-08-01 A method of etch depth control in sintered workpieces
PCT/GB1997/001941 WO1998005605A1 (en) 1996-08-01 1997-07-17 A method of etch depth control in sintered workpieces
AU35536/97A AU3553697A (en) 1996-08-01 1997-07-17 A method of etch depth control in sintered workpieces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9616221.9A GB9616221D0 (en) 1996-08-01 1996-08-01 A method of etch depth control in sintered workpieces

Publications (1)

Publication Number Publication Date
GB9616221D0 true GB9616221D0 (en) 1996-09-11

Family

ID=10797888

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB9616221.9A Pending GB9616221D0 (en) 1996-08-01 1996-08-01 A method of etch depth control in sintered workpieces

Country Status (3)

Country Link
AU (1) AU3553697A (en)
GB (1) GB9616221D0 (en)
WO (1) WO1998005605A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6290864B1 (en) 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367044A (en) * 1980-12-31 1983-01-04 International Business Machines Corp. Situ rate and depth monitor for silicon etching
US4435898A (en) * 1982-03-22 1984-03-13 International Business Machines Corporation Method for making a base etched transistor integrated circuit
JPH03196521A (en) * 1989-12-25 1991-08-28 Nec Kansai Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
WO1998005605A1 (en) 1998-02-12
AU3553697A (en) 1998-02-25

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