GB9613672D0 - Method and apparatus for manufacturing a semiconductor device - Google Patents
Method and apparatus for manufacturing a semiconductor deviceInfo
- Publication number
- GB9613672D0 GB9613672D0 GBGB9613672.6A GB9613672A GB9613672D0 GB 9613672 D0 GB9613672 D0 GB 9613672D0 GB 9613672 A GB9613672 A GB 9613672A GB 9613672 D0 GB9613672 D0 GB 9613672D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8012325A JPH09205254A (en) | 1996-01-26 | 1996-01-26 | Manufacture of semiconductor device, semiconductor manufacturing device, and method for manufacturing semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9613672D0 true GB9613672D0 (en) | 1996-08-28 |
GB2309582A GB2309582A (en) | 1997-07-30 |
Family
ID=11802169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9613672A Withdrawn GB2309582A (en) | 1996-01-26 | 1996-06-28 | Method and apparatus for manufacturing a semiconductor device with a nitride layer |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH09205254A (en) |
DE (1) | DE19631132A1 (en) |
GB (1) | GB2309582A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69929775T2 (en) | 1998-09-11 | 2006-11-02 | Sharp K.K. | METHOD FOR PRODUCING A CONNECTING SEMICONDUCTOR HALF AND CONNECTING SEMICONDUCTOR ELEMENT |
JP4191227B2 (en) * | 2007-02-21 | 2008-12-03 | 昭和電工株式会社 | Group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp |
JP6123414B2 (en) * | 2013-03-27 | 2017-05-10 | 三菱電機株式会社 | Semiconductor element manufacturing method and semiconductor element manufacturing apparatus |
JP6265032B2 (en) * | 2014-04-28 | 2018-01-24 | 住友電気工業株式会社 | Semiconductor photo detector |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0363547B1 (en) * | 1988-09-12 | 1993-12-29 | International Business Machines Corporation | Method for etching mirror facets of III-V semiconductor structures |
US5144634A (en) * | 1989-09-07 | 1992-09-01 | International Business Machines Corporation | Method for mirror passivation of semiconductor laser diodes |
JP2770544B2 (en) * | 1990-03-23 | 1998-07-02 | 松下電器産業株式会社 | Method of manufacturing MIS type semiconductor device |
EP0448763A1 (en) * | 1990-03-30 | 1991-10-02 | Siemens Aktiengesellschaft | Process and apparatus for manufacturing conductive layers or structures for highly integrated circuits |
EP0450255B1 (en) * | 1990-04-06 | 1994-07-06 | International Business Machines Corporation | Process for forming the ridge structure of a self-aligned semiconductor laser |
US5376223A (en) * | 1992-01-09 | 1994-12-27 | Varian Associates, Inc. | Plasma etch process |
US5354698A (en) * | 1993-07-19 | 1994-10-11 | Micron Technology, Inc. | Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process |
-
1996
- 1996-01-26 JP JP8012325A patent/JPH09205254A/en active Pending
- 1996-06-28 GB GB9613672A patent/GB2309582A/en not_active Withdrawn
- 1996-08-01 DE DE19631132A patent/DE19631132A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2309582A (en) | 1997-07-30 |
JPH09205254A (en) | 1997-08-05 |
DE19631132A1 (en) | 1997-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |