GB9608565D0 - Plasma enhanced chemical vapour deposition of a layer - Google Patents
Plasma enhanced chemical vapour deposition of a layerInfo
- Publication number
- GB9608565D0 GB9608565D0 GBGB9608565.9A GB9608565A GB9608565D0 GB 9608565 D0 GB9608565 D0 GB 9608565D0 GB 9608565 A GB9608565 A GB 9608565A GB 9608565 D0 GB9608565 D0 GB 9608565D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- vapour deposition
- plasma enhanced
- enhanced chemical
- chemical vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9608565A GB2312439A (en) | 1996-04-24 | 1996-04-24 | Plasma enhanced chemical vapour deposition of a layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9608565A GB2312439A (en) | 1996-04-24 | 1996-04-24 | Plasma enhanced chemical vapour deposition of a layer |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9608565D0 true GB9608565D0 (en) | 1996-07-03 |
GB2312439A GB2312439A (en) | 1997-10-29 |
Family
ID=10792617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9608565A Withdrawn GB2312439A (en) | 1996-04-24 | 1996-04-24 | Plasma enhanced chemical vapour deposition of a layer |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2312439A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7080528B2 (en) | 2002-10-23 | 2006-07-25 | Applied Materials, Inc. | Method of forming a phosphorus doped optical core using a PECVD process |
US9484199B2 (en) | 2013-09-06 | 2016-11-01 | Applied Materials, Inc. | PECVD microcrystalline silicon germanium (SiGe) |
CN106783542A (en) * | 2016-12-23 | 2017-05-31 | 苏州工业园区纳米产业技术研究院有限公司 | The method that LPCVD methods deposit germanium-silicon film |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4060660A (en) * | 1976-01-15 | 1977-11-29 | Rca Corporation | Deposition of transparent amorphous carbon films |
US4681653A (en) * | 1984-06-01 | 1987-07-21 | Texas Instruments Incorporated | Planarized dielectric deposited using plasma enhanced chemical vapor deposition |
GB8620346D0 (en) * | 1986-08-21 | 1986-10-01 | Special Research Systems Ltd | Chemical vapour deposition of films |
US5312778A (en) * | 1989-10-03 | 1994-05-17 | Applied Materials, Inc. | Method for plasma processing using magnetically enhanced plasma chemical vapor deposition |
JP2739129B2 (en) * | 1990-02-21 | 1998-04-08 | 日本碍子株式会社 | Manufacturing method of composite member |
US5120680A (en) * | 1990-07-19 | 1992-06-09 | At&T Bell Laboratories | Method for depositing dielectric layers |
US5052339A (en) * | 1990-10-16 | 1991-10-01 | Air Products And Chemicals, Inc. | Radio frequency plasma enhanced chemical vapor deposition process and reactor |
DE69216747T2 (en) * | 1991-10-07 | 1997-07-31 | Sumitomo Metal Ind | Process for forming a thin film |
GB2270326B (en) * | 1992-09-03 | 1996-10-09 | Kobe Steel Europ Ltd | Preparation of diamond films on silicon substrates |
JP3351843B2 (en) * | 1993-02-24 | 2002-12-03 | 忠弘 大見 | Film formation method |
GB9414905D0 (en) * | 1994-07-23 | 1994-09-21 | Barr & Stroud Ltd | Protective coatings for optical components |
-
1996
- 1996-04-24 GB GB9608565A patent/GB2312439A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2312439A (en) | 1997-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |