GB955727A - Improvements relating to the manufacture of copper oxide rectifiers - Google Patents
Improvements relating to the manufacture of copper oxide rectifiersInfo
- Publication number
- GB955727A GB955727A GB9233/61A GB923361A GB955727A GB 955727 A GB955727 A GB 955727A GB 9233/61 A GB9233/61 A GB 9233/61A GB 923361 A GB923361 A GB 923361A GB 955727 A GB955727 A GB 955727A
- Authority
- GB
- United Kingdom
- Prior art keywords
- annealing
- oxide
- copper
- temperature
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 title abstract 4
- 239000005751 Copper oxide Substances 0.000 title abstract 3
- 229910000431 copper oxide Inorganic materials 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000137 annealing Methods 0.000 abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 2
- 229940112669 cuprous oxide Drugs 0.000 abstract 2
- 238000010791 quenching Methods 0.000 abstract 2
- 230000000171 quenching effect Effects 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 238000010306 acid treatment Methods 0.000 abstract 1
- 230000032683 aging Effects 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
- H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
955,727. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. March 13, 1962 [March 14, 1961], No. 9233/61. Heading H1K. In a method of manufacturing a copper oxide rectifier element in which a copper plate is raised to a first elevated temperature in an oxidising atmosphere to produce a layer of cuprous oxide thereon, annealed at an elevated temperature lower than said first temperature and quenched, a delay is introduced between annealing and quenching during which the plate is held in cool air, and the delay is so chosen as to endow the rectifier element with a predetermined reverse breakdown voltage characteristic. The delay period is one to two minutes. The first elevated temperature is provided by a furnace at a temperature of. 1040‹ C. Air is slowly fed to the furnace. The annealing temperature is 550‹ C. and during the annealing process a layer of black copper oxide is formed on the plates. The element is maintained both in the furnace and in the annealing chamber for about ten minutes. After quenching in cold water one side of the element is exposed to dilute nitric acid to remove all oxide and the black oxide produced during annealing is removed from the other side by further acid treatment, to leave a cuprous oxide layer on said other side. A contact is formed on the copper oxide layer by vacuum deposition of gold using a mask. Subsequently the rectifier element is aged in a chamber maintained at 60 ‹ to 100 ‹ C. for a period of from a few hours to a number of days. The ageing may be performed after rectifier elements have been assembled into stacks to form a complete assembly. The copper plates may be discs or washers and may contain a small amount of antimony.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9233/61A GB955727A (en) | 1961-03-14 | 1961-03-14 | Improvements relating to the manufacture of copper oxide rectifiers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9233/61A GB955727A (en) | 1961-03-14 | 1961-03-14 | Improvements relating to the manufacture of copper oxide rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB955727A true GB955727A (en) | 1964-04-22 |
Family
ID=9867968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9233/61A Expired GB955727A (en) | 1961-03-14 | 1961-03-14 | Improvements relating to the manufacture of copper oxide rectifiers |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB955727A (en) |
-
1961
- 1961-03-14 GB GB9233/61A patent/GB955727A/en not_active Expired
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