GB9516279D0 - Power mosfet with overcurrent and over-temperature protection - Google Patents
Power mosfet with overcurrent and over-temperature protectionInfo
- Publication number
- GB9516279D0 GB9516279D0 GBGB9516279.8A GB9516279A GB9516279D0 GB 9516279 D0 GB9516279 D0 GB 9516279D0 GB 9516279 A GB9516279 A GB 9516279A GB 9516279 D0 GB9516279 D0 GB 9516279D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- overcurrent
- over
- power mosfet
- temperature protection
- protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/121,288 US5497285A (en) | 1993-09-14 | 1993-09-14 | Power MOSFET with overcurrent and over-temperature protection |
GB9418179A GB2281815B (en) | 1993-09-14 | 1994-09-09 | Power mosfet with overcurrent and over-temperature protection |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9516279D0 true GB9516279D0 (en) | 1995-10-11 |
GB2291743A GB2291743A (en) | 1996-01-31 |
GB2291743B GB2291743B (en) | 1996-08-28 |
Family
ID=26305594
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9516278A Expired - Fee Related GB2291742B (en) | 1993-09-14 | 1994-09-09 | Power MOS-gated device with over-temperature protection |
GB9516279A Expired - Fee Related GB2291743B (en) | 1993-09-14 | 1994-09-09 | Power MOS-gated device with overcurrent and over-temperature protection |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9516278A Expired - Fee Related GB2291742B (en) | 1993-09-14 | 1994-09-09 | Power MOS-gated device with over-temperature protection |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB2291742B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE59709662D1 (en) * | 1996-05-21 | 2003-05-08 | Infineon Technologies Ag | MOSFET with temperature protection |
DE19633920C1 (en) * | 1996-08-22 | 1997-10-09 | Siemens Ag | Semiconductor power switch |
SG55452A1 (en) * | 1997-02-12 | 1998-12-21 | Int Rectifier Corp | Method and circuit to sense the tj of mos-gated power semi conductor devices |
EP0910870B1 (en) * | 1997-02-19 | 2008-05-14 | Nxp B.V. | Power semiconductor devices with a temperature sensor circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04323863A (en) * | 1991-04-23 | 1992-11-13 | Toyota Autom Loom Works Ltd | Semiconductor device |
DE4216810C2 (en) * | 1991-05-31 | 1999-09-16 | Fuji Electric Co Ltd | Control circuit for a conductivity change MISFET |
GB2270795B (en) * | 1992-09-18 | 1995-02-15 | Texas Instruments Ltd | Improvements in or relating to the trimming of integrated circuits |
-
1994
- 1994-09-09 GB GB9516278A patent/GB2291742B/en not_active Expired - Fee Related
- 1994-09-09 GB GB9516279A patent/GB2291743B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2291742B (en) | 1996-08-28 |
GB9516278D0 (en) | 1995-10-11 |
GB2291743B (en) | 1996-08-28 |
GB2291742A (en) | 1996-01-31 |
GB2291743A (en) | 1996-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20040909 |