GB9402814D0 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB9402814D0 GB9402814D0 GB9402814A GB9402814A GB9402814D0 GB 9402814 D0 GB9402814 D0 GB 9402814D0 GB 9402814 A GB9402814 A GB 9402814A GB 9402814 A GB9402814 A GB 9402814A GB 9402814 D0 GB9402814 D0 GB 9402814D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9402814A GB2286719B (en) | 1994-02-14 | 1994-02-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9402814A GB2286719B (en) | 1994-02-14 | 1994-02-14 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9402814D0 true GB9402814D0 (en) | 1994-04-06 |
GB2286719A GB2286719A (en) | 1995-08-23 |
GB2286719B GB2286719B (en) | 1997-09-03 |
Family
ID=10750359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9402814A Expired - Fee Related GB2286719B (en) | 1994-02-14 | 1994-02-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2286719B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892247A (en) * | 1994-10-24 | 1999-04-06 | Kabushiki Kaisha Toshiba | Semiconductor device and a manufacturing method thereof |
CN102856370B (en) * | 2012-09-18 | 2016-04-13 | 苏州晶湛半导体有限公司 | A kind of enhancement mode switching device |
CN105576020B (en) * | 2016-02-26 | 2018-06-19 | 大连理工大学 | Normally-off HEMT device with longitudinal gate structure and preparation method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4620207A (en) * | 1984-12-19 | 1986-10-28 | Eaton Corporation | Edge channel FET |
GB2270590B (en) * | 1992-09-11 | 1996-07-03 | Toshiba Cambridge Res Center | Semiconductor device and method for its manufacture |
-
1994
- 1994-02-14 GB GB9402814A patent/GB2286719B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2286719B (en) | 1997-09-03 |
GB2286719A (en) | 1995-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20120214 |