GB928110A - Semiconductor devices and methods for assembling them - Google Patents

Semiconductor devices and methods for assembling them

Info

Publication number
GB928110A
GB928110A GB512/60A GB51260A GB928110A GB 928110 A GB928110 A GB 928110A GB 512/60 A GB512/60 A GB 512/60A GB 51260 A GB51260 A GB 51260A GB 928110 A GB928110 A GB 928110A
Authority
GB
United Kingdom
Prior art keywords
lead
electrode
envelope
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB512/60A
Inventor
Irving Weiman
Morgan Edson Mcmahon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pacific Semiconductors Inc
Original Assignee
Pacific Semiconductors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pacific Semiconductors Inc filed Critical Pacific Semiconductors Inc
Priority to GB512/60A priority Critical patent/GB928110A/en
Priority to DEP24256A priority patent/DE1148660B/en
Publication of GB928110A publication Critical patent/GB928110A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

928,110. Semi-conductor devices. PACIFIC SEMICONDUCTORS Inc. Jan. 6, 1960, No. 512/60. Class 37. A method of assembling a semi-conductor device which allows the semi-conductor element to be etched before it is encapsulated comprises the steps of electrically connecting one surface of a semi-conductor crystal to a first electrode, joining the first end of a lead element to another surface of the crystal, sealing the first electrode within one end of a tubular envelope, and providing, at the other end of the envelope, a second electrode, which is soldered to the second end of the lead element. In the diode shown in Fig. 2, a crystal 10 of, e.g. N-type Si, having a diffused P-type region 13 at one surface, is soldered at the opposite surface to an electrode 12, and one end of a resilient lead element 14 of, e.g. S- or C-shaped Mo wire, is bonded to the P-type region 13. This sub-assembly is inserted in one end of a tubular envelope 20 comprising a tube 23 of ceramic or glass into the ends of which are fused metal sleeves 21, 22. A second electrode 15 is inserted in the other end of envelope 20, the free end of lead 14 being received in a hole 16 in the end of electrode 15 containing a piece of solder 17. Sleeves 21, 22 are welded to electrodes 15, 12 respectively, the heat generated thereby also effecting the soldering of lead 14 into hole 16. In a modification, the lead 14 is shorter and is soldered into a hole in one end of a thicker lead which is in turn soldered into a bore in electrode 15. Fig. 3 shows a transistor comprising an N-type base region 33 bonded to a metal flange 34, and P-type emitter and collector regions 31, 32, to each of which is connected a lead 37, 36. A glass envelope is in two parts 23a, 23b, each part having a metal sleeve fused into it. The flange 34 is fused between the two parts of the envelope and electrodes 40, 41 are added as described above. Alloy junction devices may be used. Semi-conductor materials mentioned are Ge, Si, Ge-Si alloy, InSb, AlSb, GaSb, InAs, AlAs, ZnS, GaAs, PbS, PbTe, PbSe, CdS, CdTe, CdSe; donor impurities ; Sb, As, Bi, P, or any other element of Group V of the Periodic Table; and acceptor impurities: In, Ga, Tl, B, Al, or any other element of Group III of'the Periodic Table.
GB512/60A 1960-01-06 1960-01-06 Semiconductor devices and methods for assembling them Expired GB928110A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB512/60A GB928110A (en) 1960-01-06 1960-01-06 Semiconductor devices and methods for assembling them
DEP24256A DE1148660B (en) 1960-01-06 1960-01-16 Method for assembling a semiconductor crystal array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB512/60A GB928110A (en) 1960-01-06 1960-01-06 Semiconductor devices and methods for assembling them
DEP24256A DE1148660B (en) 1960-01-06 1960-01-16 Method for assembling a semiconductor crystal array

Publications (1)

Publication Number Publication Date
GB928110A true GB928110A (en) 1963-06-06

Family

ID=25989943

Family Applications (1)

Application Number Title Priority Date Filing Date
GB512/60A Expired GB928110A (en) 1960-01-06 1960-01-06 Semiconductor devices and methods for assembling them

Country Status (2)

Country Link
DE (1) DE1148660B (en)
GB (1) GB928110A (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE490647A (en) * 1948-08-14
NL180358C (en) * 1952-08-08 Xerox Corp TRANSFER BODY FOR A XEROGRAPHIC COPIER.
GB785467A (en) * 1954-12-23 1957-10-30 Gen Electric Co Ltd Improvements in or relating to the manufacture of semi-conductor devices
BE551335A (en) * 1955-09-29
US2815474A (en) * 1957-01-25 1957-12-03 Pacific Semiconductors Inc Glass sealed semiconductor rectifier
DE1054585B (en) * 1958-03-18 1959-04-09 Eberle & Co Appbau Ges Semiconductor component, e.g. B. Diode or transistor

Also Published As

Publication number Publication date
DE1148660B (en) 1963-05-16

Similar Documents

Publication Publication Date Title
US2779877A (en) Multiple junction transistor unit
US3401319A (en) Integrated latch circuit
US3235945A (en) Connection of semiconductor elements to thin film circuits using foil ribbon
US3012175A (en) Contact for gallium arsenide
GB1030540A (en) Improvements in and relating to semi-conductor diodes
GB849477A (en) Improvements in or relating to semiconductor control devices
US3015048A (en) Negative resistance transistor
GB928110A (en) Semiconductor devices and methods for assembling them
US3268739A (en) Semiconductor voltage reference system having substantially zero temperature coefficient
USRE25875E (en) Crystal diode
US2820135A (en) Method for producing electrical contact to semiconductor devices
GB820252A (en) Semiconductor device
US3308356A (en) Silicon carbide semiconductor device
GB909476A (en) Semiconductor devices
GB1319008A (en) Electron tube with bonded external semiconductor electrode
US2808543A (en) Mounting means for semiconductor crystal body
GB808840A (en) Improvements in semi-conductor devices
GB1531542A (en) Semiconductor device
GB812550A (en) Improvements in or relating to semiconductor signal translating devices
GB959520A (en) Improvements in methods of producing semi-conductor devices
JPS5565453A (en) Semiconductor device
GB800221A (en) Improvements in or relating to semi-conductor devices
GB1052435A (en)
GB776085A (en) Improvements in or relating to semi-conductor devices
SU1658373A1 (en) Controlled negative resistance device