GB922150A - Improvements in or relating to methods of making semiconductor bodies - Google Patents
Improvements in or relating to methods of making semiconductor bodiesInfo
- Publication number
- GB922150A GB922150A GB2635259A GB2635259A GB922150A GB 922150 A GB922150 A GB 922150A GB 2635259 A GB2635259 A GB 2635259A GB 2635259 A GB2635259 A GB 2635259A GB 922150 A GB922150 A GB 922150A
- Authority
- GB
- United Kingdom
- Prior art keywords
- strips
- along lines
- slices
- dividing
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
922,150. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. July 31, 1959 [Aug. 4, 1958], No. 26352/59. Class 37. A method of making strips of semi-conductor material of uniform length comprises dividing a rod into slices by cuts perpendicular to its longitudinal axis with a spacing at least as long as a strip, and parallel cuts parallel to the axis of the rod with a spacing corresponding to the strip thickness, and dividing the slices into strips along parallel lines. In an example a germanium or silicon rod 25 (Fig. 5) is cut along lines 27 and then along lines 29 (Fig. 6), or vice versa, and the resultant slices 28 divided into strips along lines 30 (Fig. 7) or along lines perpendicular to this. Transistors are formed from the resulting strips by alloying dots to corresponding points on opposite faces along the length of the strips and dividing the strip between each pair of dots.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL230223 | 1958-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB922150A true GB922150A (en) | 1963-03-27 |
Family
ID=19751299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2635259A Expired GB922150A (en) | 1958-08-04 | 1959-07-31 | Improvements in or relating to methods of making semiconductor bodies |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1095952B (en) |
FR (1) | FR1233270A (en) |
GB (1) | GB922150A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783225A (en) * | 1982-07-30 | 1988-11-08 | Hitachi, Ltd. | Wafer and method of working the same |
US5230747A (en) * | 1982-07-30 | 1993-07-27 | Hitachi, Ltd. | Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer |
US5279992A (en) * | 1982-07-30 | 1994-01-18 | Hitachi, Ltd. | Method of producing a wafer having a curved notch |
DE102011088054A1 (en) * | 2011-12-08 | 2013-06-13 | Solarworld Innovations Gmbh | Method for manufacturing silicon wafer used in solar module, involves introducing parallel saw sections into silicon crystal so as to manufacture silicon discs and aligning saw sections parallel to longitudinal axis of silicon crystal |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514082C3 (en) * | 1964-02-13 | 1984-08-30 | Kabushiki Kaisha Hitachi Seisakusho, Tokio/Tokyo | Field effect transistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2402839A (en) * | 1941-03-27 | 1946-06-25 | Bell Telephone Labor Inc | Electrical translating device utilizing silicon |
US2840770A (en) * | 1955-03-14 | 1958-06-24 | Texas Instruments Inc | Semiconductor device and method of manufacture |
-
1959
- 1959-07-31 DE DE1959N0017042 patent/DE1095952B/en active Pending
- 1959-07-31 GB GB2635259A patent/GB922150A/en not_active Expired
- 1959-08-03 FR FR801882A patent/FR1233270A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783225A (en) * | 1982-07-30 | 1988-11-08 | Hitachi, Ltd. | Wafer and method of working the same |
US5230747A (en) * | 1982-07-30 | 1993-07-27 | Hitachi, Ltd. | Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer |
US5279992A (en) * | 1982-07-30 | 1994-01-18 | Hitachi, Ltd. | Method of producing a wafer having a curved notch |
USRE40139E1 (en) * | 1982-07-30 | 2008-03-04 | Renesas Technology Corp. | Wafer having chamfered bend portions in the joint regions between the contour of the cut-away portion of the wafer |
DE102011088054A1 (en) * | 2011-12-08 | 2013-06-13 | Solarworld Innovations Gmbh | Method for manufacturing silicon wafer used in solar module, involves introducing parallel saw sections into silicon crystal so as to manufacture silicon discs and aligning saw sections parallel to longitudinal axis of silicon crystal |
Also Published As
Publication number | Publication date |
---|---|
FR1233270A (en) | 1960-10-12 |
DE1095952B (en) | 1960-12-29 |
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