GB912740A - Arrangement for quenching semi-conductor thyratrons to which direct voltage is applied - Google Patents
Arrangement for quenching semi-conductor thyratrons to which direct voltage is appliedInfo
- Publication number
- GB912740A GB912740A GB3538761A GB3538761A GB912740A GB 912740 A GB912740 A GB 912740A GB 3538761 A GB3538761 A GB 3538761A GB 3538761 A GB3538761 A GB 3538761A GB 912740 A GB912740 A GB 912740A
- Authority
- GB
- United Kingdom
- Prior art keywords
- thyratron
- conductor
- supply
- voltage
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Generation Of Surge Voltage And Current (AREA)
Abstract
912,740. Semi-conductor thyratron switching circuits. SIEMENS-SCHUCKERTWERKE A.G. Sept. 29, 1961 [Dec. 10, 1960], No. 35387/61. Class 40 (6). The switching-off voltage for a semi-conductor thyratron is derived from a separate supply giving a stable output voltage. Fig. 5 shows a thyratron type transistor 5 which when switched into circuit by a switch 3, 4 and rendered conductive by a pulse at 7 passes D.C. current to load 6. A capacitor 10 is charged from a constant voltage supply 10 so that when a second semi-conductor thyratron 11 is made conductive by a signal at its control electrode the current is diverted from thyratron 5 and it becomes non-conductive. Thyratron 11 becomes non-conductive when the capacitor has discharged. The switching off voltage in Fig. 4 is obtained from a supply of mains or higher frequency and fed through a transformer 19 and blocking capacitor 18 to the output circuit. The voltage of this frequency may be obtained from flip-flop circuit supplied from an auxiliary supply and the pulses may be repeated until terminated as a result of the cessation of load current. Half cycles of an A.C. supply may alternatively be used.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71612A DE1132190B (en) | 1960-12-10 | 1960-12-10 | Device for extinguishing DC voltage semiconductor current gates with breakdown characteristics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB912740A true GB912740A (en) | 1962-12-12 |
Family
ID=7502592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3538761A Expired GB912740A (en) | 1960-12-10 | 1961-09-29 | Arrangement for quenching semi-conductor thyratrons to which direct voltage is applied |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH391873A (en) |
| DE (1) | DE1132190B (en) |
| GB (1) | GB912740A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE307185B (en) * | 1964-06-22 | 1968-12-23 | Asea Ab | |
| DE1272644B (en) * | 1967-06-22 | 1968-07-11 | Stromag Maschf | Safety shutdown device for clutches |
| DE2845553C2 (en) * | 1978-10-17 | 1981-09-17 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Switches with controllable semiconductor valves |
-
1960
- 1960-12-10 DE DES71612A patent/DE1132190B/en active Pending
-
1961
- 1961-07-20 CH CH851261A patent/CH391873A/en unknown
- 1961-09-29 GB GB3538761A patent/GB912740A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1132190B (en) | 1962-06-28 |
| CH391873A (en) | 1965-05-15 |
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