GB9114158D0 - Element-isolating process for a semiconductor device - Google Patents

Element-isolating process for a semiconductor device

Info

Publication number
GB9114158D0
GB9114158D0 GB919114158A GB9114158A GB9114158D0 GB 9114158 D0 GB9114158 D0 GB 9114158D0 GB 919114158 A GB919114158 A GB 919114158A GB 9114158 A GB9114158 A GB 9114158A GB 9114158 D0 GB9114158 D0 GB 9114158D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
isolating process
isolating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB919114158A
Other versions
GB2254731A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9114158D0 publication Critical patent/GB9114158D0/en
Publication of GB2254731A publication Critical patent/GB2254731A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
GB9114158A 1991-04-09 1991-07-01 Element-isolating process for a semiconductor device Withdrawn GB2254731A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910005647A KR920020676A (en) 1991-04-09 1991-04-09 Device Separation Method of Semiconductor Device

Publications (2)

Publication Number Publication Date
GB9114158D0 true GB9114158D0 (en) 1991-08-21
GB2254731A GB2254731A (en) 1992-10-14

Family

ID=19313051

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9114158A Withdrawn GB2254731A (en) 1991-04-09 1991-07-01 Element-isolating process for a semiconductor device

Country Status (6)

Country Link
JP (1) JPH0689884A (en)
KR (1) KR920020676A (en)
DE (1) DE4121129A1 (en)
FR (1) FR2675310A1 (en)
GB (1) GB2254731A (en)
IT (1) IT1248545B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59405680D1 (en) * 1993-06-23 1998-05-20 Siemens Ag Process for producing an isolation trench in a substrate for smart power technologies
EP0631306B1 (en) * 1993-06-23 2000-04-26 Siemens Aktiengesellschaft Process for manufacturing an isolation region in a substrate for smart-power-technology
JP3904676B2 (en) * 1997-04-11 2007-04-11 株式会社ルネサステクノロジ Method for manufacturing trench type element isolation structure and trench type element isolation structure
DE19717363C2 (en) * 1997-04-24 2001-09-06 Siemens Ag Manufacturing process for a platinum metal structure using a lift-off process and use of the manufacturing process
GB9915589D0 (en) 1999-07-02 1999-09-01 Smithkline Beecham Plc Novel compounds
FR2800515B1 (en) 1999-11-03 2002-03-29 St Microelectronics Sa PROCESS FOR MANUFACTURING VERTICAL POWER COMPONENTS
US7648886B2 (en) 2003-01-14 2010-01-19 Globalfoundries Inc. Shallow trench isolation process
US6962857B1 (en) 2003-02-05 2005-11-08 Advanced Micro Devices, Inc. Shallow trench isolation process using oxide deposition and anneal
US7238588B2 (en) 2003-01-14 2007-07-03 Advanced Micro Devices, Inc. Silicon buffered shallow trench isolation
US7422961B2 (en) 2003-03-14 2008-09-09 Advanced Micro Devices, Inc. Method of forming isolation regions for integrated circuits
US6921709B1 (en) 2003-07-15 2005-07-26 Advanced Micro Devices, Inc. Front side seal to prevent germanium outgassing
US7462549B2 (en) 2004-01-12 2008-12-09 Advanced Micro Devices, Inc. Shallow trench isolation process and structure with minimized strained silicon consumption
CN110137082A (en) * 2018-02-09 2019-08-16 天津环鑫科技发展有限公司 A kind of optimization method of power device groove pattern

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2035468B (en) * 1978-10-11 1982-09-15 Pi Specialist Engs Ltd Vertical axis wind turbine
US4256514A (en) * 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
US4238278A (en) * 1979-06-14 1980-12-09 International Business Machines Corporation Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
JPS57204133A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Manufacture of semiconductor integrated circuit
US4454647A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
JPS5961045A (en) * 1982-09-29 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS5965446A (en) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US4477310A (en) * 1983-08-12 1984-10-16 Tektronix, Inc. Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas
JPS6083346A (en) * 1983-10-14 1985-05-11 Hitachi Ltd Semiconductor integrated circuit device
GB2148593B (en) * 1983-10-14 1987-06-10 Hitachi Ltd Process for manufacturing the isolating regions of a semiconductor integrated circuit device
DE3583575D1 (en) * 1984-10-17 1991-08-29 Hitachi Ltd COMPLEMENTAL SEMICONDUCTOR ARRANGEMENT.
JPS61107736A (en) * 1984-10-31 1986-05-26 Toshiba Corp Manufacture of semiconductor device
US4671970A (en) * 1986-02-05 1987-06-09 Ncr Corporation Trench filling and planarization process
FR2598557B1 (en) * 1986-05-09 1990-03-30 Seiko Epson Corp METHOD FOR MANUFACTURING A MEMBER ISOLATION REGION OF A SEMICONDUCTOR DEVICE
US4666556A (en) * 1986-05-12 1987-05-19 International Business Machines Corporation Trench sidewall isolation by polysilicon oxidation
US4707218A (en) * 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
JPH01129439A (en) * 1987-11-16 1989-05-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0727974B2 (en) * 1988-04-26 1995-03-29 三菱電機株式会社 Method of manufacturing semiconductor memory device
JP2666384B2 (en) * 1988-06-30 1997-10-22 ソニー株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
ITMI911743A0 (en) 1991-06-25
GB2254731A (en) 1992-10-14
IT1248545B (en) 1995-01-19
FR2675310A1 (en) 1992-10-16
DE4121129A1 (en) 1992-10-22
KR920020676A (en) 1992-11-21
ITMI911743A1 (en) 1992-12-25
JPH0689884A (en) 1994-03-29

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)