GB907942A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB907942A
GB907942A GB4017558A GB4017558A GB907942A GB 907942 A GB907942 A GB 907942A GB 4017558 A GB4017558 A GB 4017558A GB 4017558 A GB4017558 A GB 4017558A GB 907942 A GB907942 A GB 907942A
Authority
GB
United Kingdom
Prior art keywords
base
emitter
zones
zone
ohm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4017558A
Inventor
Walter Fulop
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE560551D priority Critical patent/BE560551A/xx
Priority to NL276978D priority patent/NL276978A/xx
Priority to GB3152757A priority patent/GB801444A/en
Priority to GB3152657A priority patent/GB801443A/en
Priority to US681045A priority patent/US2939205A/en
Priority to FR1189146D priority patent/FR1189146A/en
Priority to CH357470D priority patent/CH357470A/en
Priority to GB4017558A priority patent/GB907942A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to FR802548A priority patent/FR76240E/en
Priority to DEI17331A priority patent/DE1158179B/en
Priority to US857983A priority patent/US3040219A/en
Priority to FR812288A priority patent/FR77060E/en
Priority to CH8166259A priority patent/CH377449A/en
Priority to BE585557A priority patent/BE585557A/en
Priority to FR893613A priority patent/FR81572E/en
Publication of GB907942A publication Critical patent/GB907942A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Abstract

907,942. Transistors. STANDARD TELEPHONES & CABLES Ltd. Dec. 11, 1959 [Dec. 12, 1958], No. 40175/58. Class 37. In a PNP or NPN drift transistor the emitter base breakdown voltage is increased by providing between the emitter and base zones an additional zone the maximum uncompensated impurity concentration in which is lower than that in the adjacent parts of the base and emitter zones. In a PNP or NPN drift transistor (Fig. 1) the uncompensated impurity concentration in the base zone is at a low value (resistivity of 20 ohm cm.) in part 4, rises to a high value (resistivity 1 ohm cm.) at the edge of this part and thence decreases across zone 3 to a low value (resistivity 6-30 ohm cm.) at the junction with collector zone 2. A germanium or silicon body containing the zones 4 and 3 is made by inward and outward diffusion techniques and the emitter and collector zones by subsequent alloying or diffusion processes. The base contact 5 is of ring form.
GB4017558A 1956-09-05 1958-12-12 Improvements in or relating to transistors Expired GB907942A (en)

Priority Applications (15)

Application Number Priority Date Filing Date Title
BE560551D BE560551A (en) 1956-09-05
NL276978D NL276978A (en) 1956-09-05
GB3152757A GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB3152657A GB801443A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
US681045A US2939205A (en) 1956-09-05 1957-08-29 Semi-conductor devices
FR1189146D FR1189146A (en) 1956-09-05 1957-09-03 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
CH357470D CH357470A (en) 1956-09-05 1957-09-05 Method of manufacturing semiconductor devices
GB4017558A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors
FR802548A FR76240E (en) 1956-09-05 1959-08-11 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
DEI17331A DE1158179B (en) 1956-09-05 1959-12-04 Drift transistor and method for making it
US857983A US3040219A (en) 1956-09-05 1959-12-07 Transistors
FR812288A FR77060E (en) 1956-09-05 1959-12-07 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
CH8166259A CH377449A (en) 1956-09-05 1959-12-10 transistor
BE585557A BE585557A (en) 1958-12-12 1959-12-11 Improvements in the manufacture of electrical circuit elements using semiconductor bodies.
FR893613A FR81572E (en) 1956-09-05 1962-04-06 Improvements in the manufacture of electrical circuit elements using semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4017558A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors

Publications (1)

Publication Number Publication Date
GB907942A true GB907942A (en) 1962-10-10

Family

ID=10413571

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4017558A Expired GB907942A (en) 1956-09-05 1958-12-12 Improvements in or relating to transistors

Country Status (2)

Country Link
BE (1) BE585557A (en)
GB (1) GB907942A (en)

Also Published As

Publication number Publication date
BE585557A (en) 1960-06-13

Similar Documents

Publication Publication Date Title
GB1033537A (en) Improved surface-potential controlled semiconductor device
GB1470211A (en) Semiconductor devices
GB1265204A (en)
GB871307A (en) Transistor with double collector
GB1009547A (en) Semiconductor transistor devices
GB1372607A (en) Semiconductor devices
GB1279917A (en) Improvements in or relating to integrated circuits which have a multiple emitter transistor
GB1337906A (en) Integrated semiconductor structure
GB907942A (en) Improvements in or relating to transistors
GB1450749A (en) Semiconductor darlington circuit
GB899919A (en) Improvements in semi-conductive devices
GB944870A (en) Improvements in semiconductive devices
GB1127161A (en) Improvements in or relating to diffused base transistors
GB977680A (en) A drift transistor
GB958246A (en) Transistors and methods of making same
NL130600C (en)
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1182447A (en) Semiconductor Element with Transverse-Field Emitter
GB926913A (en) Improvements in transistors
GB1495864A (en) Inverse planar transistors
GB1284015A (en) Improvements in or relating to transistors
GB1229295A (en)
GB936812A (en) Improvements in or relating to transistors
GB985995A (en) A semiconductor arrangement
GB1035727A (en) Semiconductor devices