GB901402A - Metal analog compositions and processes for the production thereof - Google Patents
Metal analog compositions and processes for the production thereofInfo
- Publication number
- GB901402A GB901402A GB23456/60A GB2345660A GB901402A GB 901402 A GB901402 A GB 901402A GB 23456/60 A GB23456/60 A GB 23456/60A GB 2345660 A GB2345660 A GB 2345660A GB 901402 A GB901402 A GB 901402A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- reactants
- analog
- oxygen
- analogs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/97—Preparation from SiO or SiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/991—Boron carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/06—Metal silicides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/02—Boron; Borides
- C01B35/04—Metal borides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Abstract
A particulate metal analog consisting of the carbide of boron or silicon, silicon borides, or the borides, silicides, or carbides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, and tungsten, or mixtures thereof, has an average particle size of from 1 to 250 millimicrons, and an X-ray diffraction line broadening coefficient, k1, of from 9 X 10-2 to 3,6 X 10-4 as calculated from the expression <FORM:0901402/III/1> where b is the pure angular breadth in radians of a powder reflection, lambda is the wavelength in ngstrom units of monochromatized CuKa radiation X-rays, and 2#q is the angle of deviation of the diffracted beam. The metal analogs may also contain a weight percentage of chemically combined oxygen of from <FORM:0901402/III/2> to 25 where D is the average particle size in millimicrons and r is the density of the metal analog in grams per ml. The percentage of oxygen can be as low as 0,015%, i.e. when D = 250 and r =10. To produce the metal analogs, suitably selected reactants are dispersed with agitation in a fused salt bath at 200-1200 DEG C. under reducing conditions, and in an inert atmosphere, for example, argon. The reactants contain the essential elements of the required metal analog, and are so chosen that each contains a different essential element of the metal analog being produced, these reactants being present in proportions such that the atomic ratio of the essential elements in the separate reactants is that of the desired metal analog, and at least one of the reactants contains an essential element in a positive valency state. The reactants may be oxides, halides, carbides, borides, borates, borohydrides, silicides, silicates, or molybdates, and either reactant may be the element itself. The reducing conditions are provided by the presence of an alklai metal or alkaline earth metal, e.g. sodium or calcium, in the stoichiometric amount required to reduce to its zerovalent state whichever of the elements is in a positive valency state in the reactant. The fused salt can be any salt, or a mixture of salts, which does not decompose at the reaction temperature. For temperatures above 600 DEG C. SiCl, NaCl, and CaCl, are preferred, while from 300-600 DEG C. mixtures of AlCl3 with LiCl or NaCl are preferred. is continued until the metal analog particles become flocculated. The metal analog may be isolated under anhydrous, non-oxidizing conditions, either by filtration from the molten salt-bath followed by washing with a molten volatile halide (e.g. TiCl4) and finally distilling off such halide from the metal analog product, or by filtration followed by removing last traces of salt with an anhydrous organic solvent, e.g. ethylene glycol. If desired, the products can be exposed to an oxygen-containing environment, e.g. water or free oxygen, from which they pick up the required percentage of oxygen, aqueous extraction, for example, being carried out at 0-10 DEG C. and pH 4-10 to prevent excessive attack on the metal analogs. The metal analogs may be dispersed in water to form aquasols, or in organic liquids, e.g. methanol, ethylene glycol, to form organosols. Sols of high stability can be obtained if traces of soluble salts are completely removed by dialysis or treatment with ion exchangers. All compounds which may be prepared by the process are listed and a number of specific examples are given.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82494359A | 1959-07-06 | 1959-07-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB901402A true GB901402A (en) | 1962-07-18 |
Family
ID=25242719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB23456/60A Expired GB901402A (en) | 1959-07-06 | 1960-07-05 | Metal analog compositions and processes for the production thereof |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE592583A (en) |
CH (1) | CH445463A (en) |
DE (1) | DE1417713A1 (en) |
FR (1) | FR1266034A (en) |
GB (1) | GB901402A (en) |
LU (1) | LU38908A1 (en) |
NL (2) | NL135131C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113912074A (en) * | 2021-12-15 | 2022-01-11 | 矿冶科技集团有限公司 | High-purity superfine amorphous boron powder and preparation method thereof |
CN115028173A (en) * | 2022-06-20 | 2022-09-09 | 成都先进金属材料产业技术研究院股份有限公司 | Method for preparing titanium diboride powder by using molten salt in auxiliary manner |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2523423C2 (en) * | 1975-02-03 | 1981-12-10 | PPG Industries, Inc., 15222 Pittsburgh, Pa. | Submicron titanium diboride and process for its manufacture |
JPS60191691A (en) * | 1984-03-13 | 1985-09-30 | Nippon Steel Corp | Low-hydrogen, low-nitrogen and low-oxygen flux for welding |
CN109574014B (en) * | 2018-10-22 | 2022-04-19 | 西安建筑科技大学 | B4C fiber felt and preparation method thereof |
-
1960
- 1960-07-02 LU LU38908D patent/LU38908A1/xx unknown
- 1960-07-04 BE BE592583A patent/BE592583A/en unknown
- 1960-07-05 GB GB23456/60A patent/GB901402A/en not_active Expired
- 1960-07-06 DE DE19601417713 patent/DE1417713A1/en active Pending
- 1960-07-06 FR FR832250A patent/FR1266034A/en not_active Expired
- 1960-07-06 CH CH771060A patent/CH445463A/en unknown
- 1960-07-06 NL NL253482A patent/NL135131C/xx active
-
1971
- 1971-01-13 NL NL7100447A patent/NL7100447A/xx unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113912074A (en) * | 2021-12-15 | 2022-01-11 | 矿冶科技集团有限公司 | High-purity superfine amorphous boron powder and preparation method thereof |
CN115028173A (en) * | 2022-06-20 | 2022-09-09 | 成都先进金属材料产业技术研究院股份有限公司 | Method for preparing titanium diboride powder by using molten salt in auxiliary manner |
CN115028173B (en) * | 2022-06-20 | 2024-02-02 | 成都先进金属材料产业技术研究院股份有限公司 | Method for preparing titanium diboride powder with assistance of molten salt |
Also Published As
Publication number | Publication date |
---|---|
FR1266034A (en) | 1961-07-07 |
NL7100447A (en) | 1971-05-25 |
LU38908A1 (en) | 1960-09-02 |
CH445463A (en) | 1967-10-31 |
NL135131C (en) | 1972-10-16 |
NL253482A (en) | 1964-03-25 |
BE592583A (en) | 1960-10-31 |
DE1417713A1 (en) | 1968-10-03 |
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