GB901402A - Metal analog compositions and processes for the production thereof - Google Patents

Metal analog compositions and processes for the production thereof

Info

Publication number
GB901402A
GB901402A GB23456/60A GB2345660A GB901402A GB 901402 A GB901402 A GB 901402A GB 23456/60 A GB23456/60 A GB 23456/60A GB 2345660 A GB2345660 A GB 2345660A GB 901402 A GB901402 A GB 901402A
Authority
GB
United Kingdom
Prior art keywords
metal
reactants
analog
oxygen
analogs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23456/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of GB901402A publication Critical patent/GB901402A/en
Expired legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • C01B32/963Preparation from compounds containing silicon
    • C01B32/97Preparation from SiO or SiO2
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/991Boron carbide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/06Metal silicides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/04Metal borides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/30Particle morphology extending in three dimensions
    • C01P2004/32Spheres
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/80Particles consisting of a mixture of two or more inorganic phases
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/10Solid density
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)

Abstract

A particulate metal analog consisting of the carbide of boron or silicon, silicon borides, or the borides, silicides, or carbides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, and tungsten, or mixtures thereof, has an average particle size of from 1 to 250 millimicrons, and an X-ray diffraction line broadening coefficient, k1, of from 9 X 10-2 to 3,6 X 10-4 as calculated from the expression <FORM:0901402/III/1> where b is the pure angular breadth in radians of a powder reflection, lambda is the wavelength in ngstrom units of monochromatized CuKa radiation X-rays, and 2#q is the angle of deviation of the diffracted beam. The metal analogs may also contain a weight percentage of chemically combined oxygen of from <FORM:0901402/III/2> to 25 where D is the average particle size in millimicrons and r is the density of the metal analog in grams per ml. The percentage of oxygen can be as low as 0,015%, i.e. when D = 250 and r =10. To produce the metal analogs, suitably selected reactants are dispersed with agitation in a fused salt bath at 200-1200 DEG C. under reducing conditions, and in an inert atmosphere, for example, argon. The reactants contain the essential elements of the required metal analog, and are so chosen that each contains a different essential element of the metal analog being produced, these reactants being present in proportions such that the atomic ratio of the essential elements in the separate reactants is that of the desired metal analog, and at least one of the reactants contains an essential element in a positive valency state. The reactants may be oxides, halides, carbides, borides, borates, borohydrides, silicides, silicates, or molybdates, and either reactant may be the element itself. The reducing conditions are provided by the presence of an alklai metal or alkaline earth metal, e.g. sodium or calcium, in the stoichiometric amount required to reduce to its zerovalent state whichever of the elements is in a positive valency state in the reactant. The fused salt can be any salt, or a mixture of salts, which does not decompose at the reaction temperature. For temperatures above 600 DEG C. SiCl, NaCl, and CaCl, are preferred, while from 300-600 DEG C. mixtures of AlCl3 with LiCl or NaCl are preferred. is continued until the metal analog particles become flocculated. The metal analog may be isolated under anhydrous, non-oxidizing conditions, either by filtration from the molten salt-bath followed by washing with a molten volatile halide (e.g. TiCl4) and finally distilling off such halide from the metal analog product, or by filtration followed by removing last traces of salt with an anhydrous organic solvent, e.g. ethylene glycol. If desired, the products can be exposed to an oxygen-containing environment, e.g. water or free oxygen, from which they pick up the required percentage of oxygen, aqueous extraction, for example, being carried out at 0-10 DEG C. and pH 4-10 to prevent excessive attack on the metal analogs. The metal analogs may be dispersed in water to form aquasols, or in organic liquids, e.g. methanol, ethylene glycol, to form organosols. Sols of high stability can be obtained if traces of soluble salts are completely removed by dialysis or treatment with ion exchangers. All compounds which may be prepared by the process are listed and a number of specific examples are given.
GB23456/60A 1959-07-06 1960-07-05 Metal analog compositions and processes for the production thereof Expired GB901402A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82494359A 1959-07-06 1959-07-06

Publications (1)

Publication Number Publication Date
GB901402A true GB901402A (en) 1962-07-18

Family

ID=25242719

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23456/60A Expired GB901402A (en) 1959-07-06 1960-07-05 Metal analog compositions and processes for the production thereof

Country Status (7)

Country Link
BE (1) BE592583A (en)
CH (1) CH445463A (en)
DE (1) DE1417713A1 (en)
FR (1) FR1266034A (en)
GB (1) GB901402A (en)
LU (1) LU38908A1 (en)
NL (2) NL135131C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113912074A (en) * 2021-12-15 2022-01-11 矿冶科技集团有限公司 High-purity superfine amorphous boron powder and preparation method thereof
CN115028173A (en) * 2022-06-20 2022-09-09 成都先进金属材料产业技术研究院股份有限公司 Method for preparing titanium diboride powder by using molten salt in auxiliary manner

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2523423C2 (en) * 1975-02-03 1981-12-10 PPG Industries, Inc., 15222 Pittsburgh, Pa. Submicron titanium diboride and process for its manufacture
JPS60191691A (en) * 1984-03-13 1985-09-30 Nippon Steel Corp Low-hydrogen, low-nitrogen and low-oxygen flux for welding
CN109574014B (en) * 2018-10-22 2022-04-19 西安建筑科技大学 B4C fiber felt and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113912074A (en) * 2021-12-15 2022-01-11 矿冶科技集团有限公司 High-purity superfine amorphous boron powder and preparation method thereof
CN115028173A (en) * 2022-06-20 2022-09-09 成都先进金属材料产业技术研究院股份有限公司 Method for preparing titanium diboride powder by using molten salt in auxiliary manner
CN115028173B (en) * 2022-06-20 2024-02-02 成都先进金属材料产业技术研究院股份有限公司 Method for preparing titanium diboride powder with assistance of molten salt

Also Published As

Publication number Publication date
FR1266034A (en) 1961-07-07
NL7100447A (en) 1971-05-25
LU38908A1 (en) 1960-09-02
CH445463A (en) 1967-10-31
NL135131C (en) 1972-10-16
NL253482A (en) 1964-03-25
BE592583A (en) 1960-10-31
DE1417713A1 (en) 1968-10-03

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