GB8710281D0 - Making semiconductor device - Google Patents
Making semiconductor deviceInfo
- Publication number
- GB8710281D0 GB8710281D0 GB878710281A GB8710281A GB8710281D0 GB 8710281 D0 GB8710281 D0 GB 8710281D0 GB 878710281 A GB878710281 A GB 878710281A GB 8710281 A GB8710281 A GB 8710281A GB 8710281 D0 GB8710281 D0 GB 8710281D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- making semiconductor
- making
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10596586 | 1986-05-09 | ||
JP22770986 | 1986-09-26 | ||
JP62053453A JPS63184352A (en) | 1986-05-09 | 1987-03-09 | Manufacture of semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8710281D0 true GB8710281D0 (en) | 1987-06-03 |
GB2190241A GB2190241A (en) | 1987-11-11 |
GB2190241B GB2190241B (en) | 1989-12-13 |
Family
ID=27294953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8710281A Expired GB2190241B (en) | 1986-05-09 | 1987-04-30 | Method of making a semiconductor device |
Country Status (6)
Country | Link |
---|---|
DE (1) | DE3715092A1 (en) |
FR (1) | FR2598557B1 (en) |
GB (1) | GB2190241B (en) |
HK (1) | HK28791A (en) |
NL (1) | NL190591C (en) |
SG (1) | SG60090G (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1189143B (en) * | 1986-05-16 | 1988-01-28 | Sgs Microelettronica Spa | PROCEDURE FOR THE IMPLEMENTATION OF THE INSULATION OF INTEGRATED CIRCUITS WITH A VERY HIGH INTEGRATION SCALE, IN PARTICULAR IN MOS AND CMOS TECHNOLOGY |
JPH0442948A (en) * | 1990-06-06 | 1992-02-13 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
KR920020676A (en) * | 1991-04-09 | 1992-11-21 | 김광호 | Device Separation Method of Semiconductor Device |
JPH0574927A (en) * | 1991-09-13 | 1993-03-26 | Nec Corp | Production of semiconductor device |
KR0147630B1 (en) * | 1995-04-21 | 1998-11-02 | 김광호 | Insulating method of semiconductor device |
KR980006053A (en) * | 1996-06-26 | 1998-03-30 | 문정환 | Method for forming a separation film of a semiconductor device |
CN102683290A (en) * | 2011-03-08 | 2012-09-19 | 无锡华润上华半导体有限公司 | ROM (read only memory) device and manufacturing method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL170348C (en) * | 1970-07-10 | 1982-10-18 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING TO A SURFACE OF A SEMICONDUCTOR BODY AGAINST DOTTING AND AGAINST THERMAL OXIDICATION MASK MATERIAL, PRE-FRIENDLY COVERING THE WINDOWS OF THE WINDOWS IN THE MATERIALS The semiconductor body with the mask is subjected to a thermal oxidation treatment to form an oxide pattern that at least partially fills in the recesses. |
JPS5578540A (en) * | 1978-12-08 | 1980-06-13 | Hitachi Ltd | Manufacture of semiconductor device |
US4238278A (en) * | 1979-06-14 | 1980-12-09 | International Business Machines Corporation | Polycrystalline silicon oxidation method for making shallow and deep isolation trenches |
JPS5694647A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Forming method for oxidized film |
JPS5694646A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Forming method for oxidized film |
US4394196A (en) * | 1980-07-16 | 1983-07-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of etching, refilling and etching dielectric grooves for isolating micron size device regions |
JPS5893342A (en) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | Manufacture of semiconductor device |
US4435446A (en) * | 1982-11-15 | 1984-03-06 | Hewlett-Packard Company | Edge seal with polysilicon in LOCOS process |
JPS6054453A (en) * | 1983-09-05 | 1985-03-28 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
-
1987
- 1987-04-27 FR FR878705903A patent/FR2598557B1/en not_active Expired - Lifetime
- 1987-04-30 GB GB8710281A patent/GB2190241B/en not_active Expired
- 1987-05-06 DE DE19873715092 patent/DE3715092A1/en active Granted
- 1987-05-08 NL NL8701087A patent/NL190591C/en not_active IP Right Cessation
-
1990
- 1990-07-19 SG SG60090A patent/SG60090G/en unknown
-
1991
- 1991-04-18 HK HK287/91A patent/HK28791A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3715092A1 (en) | 1987-11-12 |
NL8701087A (en) | 1987-12-01 |
GB2190241B (en) | 1989-12-13 |
NL190591B (en) | 1993-12-01 |
FR2598557B1 (en) | 1990-03-30 |
NL190591C (en) | 1994-05-02 |
GB2190241A (en) | 1987-11-11 |
FR2598557A1 (en) | 1987-11-13 |
DE3715092C2 (en) | 1993-07-29 |
HK28791A (en) | 1991-04-26 |
SG60090G (en) | 1990-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB8701769D0 (en) | Semiconductor device | |
GB8726250D0 (en) | Semiconductor device | |
GB8713440D0 (en) | Semiconductor device | |
GB8609337D0 (en) | Semiconductor devices | |
GB2213988B (en) | Semiconductor device | |
EP0273725A3 (en) | Encapsulated semiconductor device | |
EP0235785A3 (en) | Semiconductor device | |
GB8713386D0 (en) | Semiconductor device | |
EP0279605A3 (en) | Semiconductor device | |
GB8612010D0 (en) | Semiconductor devices | |
GB2209870B (en) | Semiconductor devices | |
GB8804954D0 (en) | Semiconductor device | |
GB2188479B (en) | Semiconductor devices | |
GB8713388D0 (en) | Semiconductor device | |
GB8723775D0 (en) | Semiconductor device | |
EP0243953A3 (en) | Compound semiconductor device | |
GB8630814D0 (en) | Semiconductor device | |
GB8713382D0 (en) | Semiconductor device | |
GB8727134D0 (en) | Semiconductor device | |
GB8814297D0 (en) | Semiconductor device | |
GB8710281D0 (en) | Making semiconductor device | |
GB8719817D0 (en) | Semiconductor devices | |
GB2198581B (en) | Semiconductor arrangement | |
GB8717734D0 (en) | Semiconductor device | |
EP0305121A3 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Effective date: 20070429 |