GB8623441D0 - Injection lasers - Google Patents

Injection lasers

Info

Publication number
GB8623441D0
GB8623441D0 GB868623441A GB8623441A GB8623441D0 GB 8623441 D0 GB8623441 D0 GB 8623441D0 GB 868623441 A GB868623441 A GB 868623441A GB 8623441 A GB8623441 A GB 8623441A GB 8623441 D0 GB8623441 D0 GB 8623441D0
Authority
GB
United Kingdom
Prior art keywords
injection lasers
lasers
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB868623441A
Other versions
GB2195822A (en
GB2195822B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8623441A priority Critical patent/GB2195822B/en
Publication of GB8623441D0 publication Critical patent/GB8623441D0/en
Publication of GB2195822A publication Critical patent/GB2195822A/en
Application granted granted Critical
Publication of GB2195822B publication Critical patent/GB2195822B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Optical Couplings Of Light Guides (AREA)
GB8623441A 1986-09-30 1986-09-30 Injection lasers Expired - Fee Related GB2195822B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8623441A GB2195822B (en) 1986-09-30 1986-09-30 Injection lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8623441A GB2195822B (en) 1986-09-30 1986-09-30 Injection lasers

Publications (3)

Publication Number Publication Date
GB8623441D0 true GB8623441D0 (en) 1986-11-05
GB2195822A GB2195822A (en) 1988-04-13
GB2195822B GB2195822B (en) 1990-01-24

Family

ID=10605002

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8623441A Expired - Fee Related GB2195822B (en) 1986-09-30 1986-09-30 Injection lasers

Country Status (1)

Country Link
GB (1) GB2195822B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185759A (en) * 1990-06-12 1993-02-09 Kabushiki Kaisha Toshiba Phase-shifted distributed feedback type semiconductor laser device
US5058121A (en) * 1990-06-13 1991-10-15 Xerox Corporation Coupling structures for a phase-locked laser array
US5228047A (en) * 1990-09-21 1993-07-13 Sharp Kabushiki Kaisha Semiconductor laser device and a method for producing the same
ES2153471T3 (en) * 1994-02-24 2001-03-01 British Telecomm SEMICONDUCTOR DEVICE.
US5844929A (en) * 1994-02-24 1998-12-01 British Telecommunications Public Limited Company Optical device with composite passive and tapered active waveguide regions
EP0814547B1 (en) * 1995-12-28 2005-11-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and process for producing the same
JPH11307862A (en) * 1998-04-21 1999-11-05 Nec Corp Semiconductor laser
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
DE202005015673U1 (en) * 2005-10-03 2005-12-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Monolithic integrated BH-laser structure, has diffusion active laser layer exhibiting integrated tapering in lateral direction towards on front facet in formation of structure as reinforcement unit
FR2897726A1 (en) * 2006-06-29 2007-08-24 France Telecom Optical laser source e.g. distributed Bragg reflector laser, for forming e.g. light transmitter module, has deflecting surface deflecting light beam formed in mode adaptation zone whose thickness is less than that of active layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251780A (en) * 1978-07-03 1981-02-17 Xerox Corporation Stripe offset geometry in injection lasers to achieve transverse mode control
US4349905A (en) * 1980-07-22 1982-09-14 Hewlett-Packard Company Tapered stripe semiconductor laser
JPS59154089A (en) * 1983-02-22 1984-09-03 Sony Corp Semiconductor laser

Also Published As

Publication number Publication date
GB2195822A (en) 1988-04-13
GB2195822B (en) 1990-01-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19920930