GB8609480D0 - Single crystal - Google Patents

Single crystal

Info

Publication number
GB8609480D0
GB8609480D0 GB868609480A GB8609480A GB8609480D0 GB 8609480 D0 GB8609480 D0 GB 8609480D0 GB 868609480 A GB868609480 A GB 868609480A GB 8609480 A GB8609480 A GB 8609480A GB 8609480 D0 GB8609480 D0 GB 8609480D0
Authority
GB
United Kingdom
Prior art keywords
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB868609480A
Other versions
GB2189166A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp, Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Kasei Corp
Publication of GB8609480D0 publication Critical patent/GB8609480D0/en
Publication of GB2189166A publication Critical patent/GB2189166A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB08609480A 1985-02-04 1986-04-18 A single crystal of IIIb-Vb compound, particularly GaAs, and method for producing the same Withdrawn GB2189166A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60019506A JPS61178497A (en) 1985-02-04 1985-02-04 Method for growing gallium arsenide single with low dislocation density

Publications (2)

Publication Number Publication Date
GB8609480D0 true GB8609480D0 (en) 1986-05-21
GB2189166A GB2189166A (en) 1987-10-21

Family

ID=12001256

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08609480A Withdrawn GB2189166A (en) 1985-02-04 1986-04-18 A single crystal of IIIb-Vb compound, particularly GaAs, and method for producing the same

Country Status (4)

Country Link
JP (1) JPS61178497A (en)
DE (1) DE3614079A1 (en)
FR (1) FR2597885B1 (en)
GB (1) GB2189166A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
TW319916B (en) * 1995-06-05 1997-11-11 Hewlett Packard Co
US6794731B2 (en) 1997-02-18 2004-09-21 Lumileds Lighting U.S., Llc Minority carrier semiconductor devices with improved reliability
EP1213627B1 (en) * 2000-06-21 2010-12-22 Citizen Holdings Co., Ltd. Power generating type electronic clock and method for controlling the same
AU9227001A (en) * 2000-09-29 2002-04-15 Showa Denko Kk Inp single crystal substrate
DE102007026298A1 (en) 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Arrangement and method for producing a crystal from the melt of a raw material and single crystal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533967A (en) * 1966-11-10 1970-10-13 Monsanto Co Double-doped gallium arsenide and method of preparation
JPS5263065A (en) * 1975-11-19 1977-05-25 Nec Corp Single crystal growth
JPS5914440B2 (en) * 1981-09-18 1984-04-04 住友電気工業株式会社 Method for doping boron into CaAs single crystal
CA1214381A (en) * 1983-07-20 1986-11-25 Roelof P. Bult Method of growing gallium arsenide crystals using boron oxide encapsulant
JPS60200900A (en) * 1984-03-26 1985-10-11 Sumitomo Electric Ind Ltd Semiconductor single crystal of group iii-v compound having low dislocation density
US4594173A (en) * 1984-04-19 1986-06-10 Westinghouse Electric Corp. Indium doped gallium arsenide crystals and method of preparation

Also Published As

Publication number Publication date
FR2597885A1 (en) 1987-10-30
JPS61178497A (en) 1986-08-11
DE3614079A1 (en) 1987-10-29
GB2189166A (en) 1987-10-21
FR2597885B1 (en) 1990-11-16

Similar Documents

Publication Publication Date Title
BG47969A1 (en) Cryoultrasonic skalpel
EP0197779A3 (en) Display case
GB2178939B (en) Display case
GB8609480D0 (en) Single crystal
AR242568A1 (en) Methylenedioxyphenanthrene
GB8514042D0 (en) Display case
GB8605164D0 (en) Wristwatch
GB8510930D0 (en) Crystal oscillator
GB8617341D0 (en) Time-announcing timepiece
CA54738S (en) Display
ZA864101B (en) Crystal growth
CA54057S (en) Mini-kiosk
CA54075S (en) Footbag
CA54277S (en) Footbag
CA54278S (en) Footbag
BG44513A1 (en) Pseudographic display
GB8517582D0 (en) Display
GB8530702D0 (en) Display
GB8600993D0 (en) Display
GB8524580D0 (en) Hand-up displays
GB8515465D0 (en) Timepiece
GB8502712D0 (en) Watches
CS927685A1 (en) Zmesny nesfarbujuci stabilizator syntetickych kaucukov so zlepsenou spracovatelnostou
CS930185A1 (en) Sposob vyroby fermentovanych mliekarenskych vyrobkov so znizenou energetickou hodnotou
CS967085A1 (en) Zmes alifatickych azozlucenin so zvysenou tepelnou stabitou

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)