GB852849A - Improvements in or relating to d.c. gate circuits - Google Patents
Improvements in or relating to d.c. gate circuitsInfo
- Publication number
- GB852849A GB852849A GB3852/60A GB385260A GB852849A GB 852849 A GB852849 A GB 852849A GB 3852/60 A GB3852/60 A GB 3852/60A GB 385260 A GB385260 A GB 385260A GB 852849 A GB852849 A GB 852849A
- Authority
- GB
- United Kingdom
- Prior art keywords
- current
- switching
- diodes
- diode
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Landscapes
- Control Of Electrical Variables (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
852,849. Diode switching circuits. DAYSTROM Inc. March 4, 1958 [March 12, 1957], No. 3852/60. Divided out of 852,848. Class 40(6). The Figure shows a D.C. gate circuit for switching a D.C. current Io into or away from a load 11 in dependence upon the polarity of a switching signal Is. When the switching signal Is is of the same polarity as the D.C. current Io to be switched, i.e. positive, diodes 16 and 17 are non-conducting and diodes 18 and 19 conducting. In this condition the current Io passes through diode 18 and load 11 while the switching current Is is shunted through diode 19. When the switching current Is is reversed in polarity, i.e. negative, diodes 16 and 17 conduct and diodes 18 and 19 are blocked; in this condition none of the D.C. current Io or switching current Is passes through diode 18 or load 11. The D.C. current Io is shunted through diode 16 and the switching current is conducted through diodes 16 and 17. The switching current Is must be at least as large as the current Io when the gate is closed and is preferably 2 to 10 times as large as the current Io in both the gate open and closed directions. The diodes are preferably diffused junction silicon diodes. The load 11 must be of the low impedance D.C. type.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US852849XA | 1957-03-12 | 1957-03-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB852849A true GB852849A (en) | 1960-11-02 |
Family
ID=22190595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3852/60A Expired GB852849A (en) | 1957-03-12 | 1958-03-04 | Improvements in or relating to d.c. gate circuits |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB852849A (en) |
-
1958
- 1958-03-04 GB GB3852/60A patent/GB852849A/en not_active Expired
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