GB844813A - Zone melting apparatus - Google Patents
Zone melting apparatusInfo
- Publication number
- GB844813A GB844813A GB12820/58A GB1282058A GB844813A GB 844813 A GB844813 A GB 844813A GB 12820/58 A GB12820/58 A GB 12820/58A GB 1282058 A GB1282058 A GB 1282058A GB 844813 A GB844813 A GB 844813A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- interface
- zone
- heat
- molten zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
<PICT:0844813/III/1> <PICT:0844813/III/2> In a method of zone-refining a rod of semiconductor material 10 (Fig. 1) by passing a molten zone along the rod, the molten zone 38 is produced by an induction coil 36 and is displaced upwards with respect to the coil 36 (see Fig. 2), whereby the induction field about the coil exerts a levitational force upon the zone permitting the treatment of a rod of greater diameter than if the molten zone is held in position by surface tension alone. The molten zone is displaced by decreasing the heat flux through the upper liquid-solid interface by heating the upper part of the rod 10 with a heater coil 40, and by increasing the heat flux through the lower liquid-solid interface by cooling the lower part of the rod with a water-cooled jacket 50. The same effect is obtained if direct current is passed through the rod so that Peltier heat is generated at the upper interface and absorbed at the lower interface, or if the molten zone is moved so that heat of crystallization is released at the upper interface and heat of fusion is consumed at the lower interface.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US844813XA | 1957-05-01 | 1957-05-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB844813A true GB844813A (en) | 1960-08-17 |
Family
ID=22185228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB12820/58A Expired GB844813A (en) | 1957-05-01 | 1958-04-22 | Zone melting apparatus |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1106732B (en) |
FR (1) | FR1238717A (en) |
GB (1) | GB844813A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL287222A (en) * | 1962-01-24 | |||
DE1219451B (en) * | 1962-08-31 | 1966-06-23 | Siemens Ag | Process for the production of flat dendritic, elongated single crystals consisting of semiconductor material |
NL301226A (en) * | 1962-12-03 | |||
DE1297584B (en) * | 1965-02-02 | 1969-06-19 | Akademie D Wissenschaften Berl | Method for crucible-free zone melting of a semiconductor rod |
DE1282612B (en) * | 1965-08-26 | 1968-11-14 | Halbleiterwerk Frankfurt Oder | Process for the homogenization of dopants in semiconductor single crystals |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE959479C (en) * | 1952-09-23 | 1957-03-07 | Siemens Ag | Method for pulling semiconductor crystals from a melt for electrically asymmetrically conductive systems with locally different concentrations of impurities |
DE1061527B (en) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Process for zone-wise remelting of rods and other elongated workpieces |
NL105554C (en) * | 1955-01-13 |
-
1958
- 1958-04-22 GB GB12820/58A patent/GB844813A/en not_active Expired
- 1958-04-26 DE DES58019A patent/DE1106732B/en active Pending
- 1958-04-29 FR FR764322A patent/FR1238717A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1238717A (en) | 1960-08-19 |
DE1106732B (en) | 1961-05-18 |
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