GB8321502D0 - Polymeric films - Google Patents
Polymeric filmsInfo
- Publication number
- GB8321502D0 GB8321502D0 GB838321502A GB8321502A GB8321502D0 GB 8321502 D0 GB8321502 D0 GB 8321502D0 GB 838321502 A GB838321502 A GB 838321502A GB 8321502 A GB8321502 A GB 8321502A GB 8321502 D0 GB8321502 D0 GB 8321502D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- polymeric films
- polymeric
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40800582A | 1982-08-13 | 1982-08-13 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8321502D0 true GB8321502D0 (en) | 1983-09-14 |
| GB2125423A GB2125423A (en) | 1984-03-07 |
| GB2125423B GB2125423B (en) | 1985-09-04 |
Family
ID=23614453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08321502A Expired GB2125423B (en) | 1982-08-13 | 1983-08-10 | Polymeric films for electronic circuits |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5948929A (en) |
| BE (1) | BE897503A (en) |
| CA (1) | CA1204527A (en) |
| DE (1) | DE3329065A1 (en) |
| FR (1) | FR2531811B1 (en) |
| GB (1) | GB2125423B (en) |
| IT (1) | IT1203708B (en) |
| NL (1) | NL8302845A (en) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225447A (en) * | 1984-04-23 | 1985-11-09 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| EP0204631A3 (en) * | 1985-06-04 | 1987-05-20 | Fairchild Semiconductor Corporation | Semiconductor structures having polysiloxane leveling film |
| US4723978A (en) * | 1985-10-31 | 1988-02-09 | International Business Machines Corporation | Method for a plasma-treated polysiloxane coating |
| US4732841A (en) * | 1986-03-24 | 1988-03-22 | Fairchild Semiconductor Corporation | Tri-level resist process for fine resolution photolithography |
| US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
| US4753855A (en) * | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
| US4749631B1 (en) * | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
| US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
| JPS63213347A (en) * | 1987-02-27 | 1988-09-06 | Mitsubishi Electric Corp | Semiconductor device |
| US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
| IT1226701B (en) * | 1988-07-29 | 1991-02-05 | Eniricerche Spa | PROCEDURE FOR THE DEPOSITION OF ORGANOSILANS ON SILICON OR SILICON OXIDE SUBSTRATES FOR DEVICES OF THE EOS OR CHEMFET TYPE. |
| JPH02291129A (en) * | 1989-04-28 | 1990-11-30 | Nec Corp | Semiconductor device |
| DE9206834U1 (en) * | 1992-02-21 | 1993-06-17 | Robert Bosch Gmbh, 7000 Stuttgart, De | |
| JP2934353B2 (en) * | 1992-06-24 | 1999-08-16 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
| JP3262334B2 (en) | 1992-07-04 | 2002-03-04 | トリコン ホルディングズ リミテッド | Method for processing semiconductor wafers |
| EP0642167A3 (en) * | 1993-08-05 | 1995-06-28 | Matsushita Electronics Corp | Semiconductor device having capacitor and manufacturing method thereof. |
| US5858880A (en) * | 1994-05-14 | 1999-01-12 | Trikon Equipment Limited | Method of treating a semi-conductor wafer |
| KR100440233B1 (en) | 1996-08-24 | 2004-07-15 | 트리콘 이큅먼츠 리미티드 | Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate |
| TW437017B (en) * | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
| US6503633B2 (en) * | 2000-05-22 | 2003-01-07 | Jsr Corporation | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film |
| WO2003104305A1 (en) * | 2002-04-18 | 2003-12-18 | Lg Chem, Ltd. | Organic silicate polymer and insulation film comprising the same |
| CN103030832B (en) | 2005-11-30 | 2015-07-08 | Lg化学株式会社 | Method for preparing microcellular foam of thermoplastic resin prepared with die having improved cooling property |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1347948A (en) * | 1961-12-15 | 1964-01-04 | Pacific Semiconductors | Process for esterification of silicon dioxide at atmospheric pressure |
| JPS5850417B2 (en) * | 1979-07-31 | 1983-11-10 | 富士通株式会社 | Manufacturing method of semiconductor device |
| JPS5760330A (en) * | 1980-09-27 | 1982-04-12 | Fujitsu Ltd | Resin composition |
-
1983
- 1983-07-14 CA CA000432475A patent/CA1204527A/en not_active Expired
- 1983-08-01 FR FR8312637A patent/FR2531811B1/en not_active Expired
- 1983-08-10 BE BE0/211328A patent/BE897503A/en not_active IP Right Cessation
- 1983-08-10 GB GB08321502A patent/GB2125423B/en not_active Expired
- 1983-08-11 JP JP58145809A patent/JPS5948929A/en active Pending
- 1983-08-11 DE DE19833329065 patent/DE3329065A1/en not_active Withdrawn
- 1983-08-12 IT IT22560/83A patent/IT1203708B/en active
- 1983-08-12 NL NL8302845A patent/NL8302845A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2125423A (en) | 1984-03-07 |
| DE3329065A1 (en) | 1984-02-16 |
| BE897503A (en) | 1983-12-01 |
| FR2531811B1 (en) | 1986-10-31 |
| CA1204527A (en) | 1986-05-13 |
| FR2531811A1 (en) | 1984-02-17 |
| GB2125423B (en) | 1985-09-04 |
| IT8322560A0 (en) | 1983-08-12 |
| NL8302845A (en) | 1984-03-01 |
| JPS5948929A (en) | 1984-03-21 |
| IT1203708B (en) | 1989-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |