GB831816A - Improvements in semi-conductive devices - Google Patents
Improvements in semi-conductive devicesInfo
- Publication number
- GB831816A GB831816A GB6435/57A GB643557A GB831816A GB 831816 A GB831816 A GB 831816A GB 6435/57 A GB6435/57 A GB 6435/57A GB 643557 A GB643557 A GB 643557A GB 831816 A GB831816 A GB 831816A
- Authority
- GB
- United Kingdom
- Prior art keywords
- envelope
- semi
- feb
- moist
- junction transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 1
- 229910000039 hydrogen halide Inorganic materials 0.000 abstract 1
- 239000012433 hydrogen halide Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
831,816. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Feb. 26, 1957 [Feb. 29, 1956], No. 6435/57. Class 37. A method of making a device comprising a semi-conductor body with at least one rectifying electrode and an ohmic electrode includes the steps of etching the body and electrode assembly and then introducing it into an atmosphere comprising at least one halogen (excluding fluorine) or a hydrogen halide, and preferably water vapour. In one embodiment an alloy junction transistor, the main body of which is P-type silicon, is etched and then introduced into a glass envelope containing dry hydrogen chloride. The envelope is then sealed, heated to 180 C. and finally cooled. Alternatively moist hydrogen fluoride or moist bromine vapour may be used. In an embodiment comprising an alloy junction transistor the base of which is N-type germanium dry hydrogen chloride is introduced into the envelope, followed by water vapour. In all cases, before finally sealing the envelope, the gas pressure may be reduced to 10<SP>-2</SP> mm. of mercury by pumping.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL350722X | 1956-02-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB831816A true GB831816A (en) | 1960-03-30 |
Family
ID=19785028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6435/57A Expired GB831816A (en) | 1956-02-29 | 1957-02-26 | Improvements in semi-conductive devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2887629A (en) |
| BE (1) | BE555371A (en) |
| CH (1) | CH350722A (en) |
| DE (1) | DE1052573B (en) |
| FR (1) | FR1167318A (en) |
| GB (1) | GB831816A (en) |
| NL (1) | NL95308C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE566430A (en) * | 1957-04-05 | |||
| US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
| DE1260445B (en) * | 1965-03-08 | 1968-02-08 | Siemens Ag | Process for diffusing gaseous doping material into a semiconductor crystal |
| GB1134998A (en) * | 1967-04-04 | 1968-11-27 | Marconi Co Ltd | Improvements in or relating to insulated gate field effect transistors |
| US3556880A (en) * | 1968-04-11 | 1971-01-19 | Rca Corp | Method of treating semiconductor devices to improve lifetime |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812480A (en) * | 1954-06-23 | 1957-11-05 | Rca Corp | Method of treating semi-conductor devices and devices produced thereby |
-
1956
- 1956-02-29 NL NL205007A patent/NL95308C/xx active
-
1957
- 1957-02-13 US US639951A patent/US2887629A/en not_active Expired - Lifetime
- 1957-02-26 DE DEN13359A patent/DE1052573B/en active Pending
- 1957-02-26 GB GB6435/57A patent/GB831816A/en not_active Expired
- 1957-02-26 CH CH350722D patent/CH350722A/en unknown
- 1957-02-27 BE BE555371A patent/BE555371A/xx unknown
- 1957-02-28 FR FR1167318D patent/FR1167318A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL95308C (en) | 1960-09-15 |
| BE555371A (en) | 1957-08-27 |
| DE1052573B (en) | 1959-03-12 |
| US2887629A (en) | 1959-05-19 |
| CH350722A (en) | 1960-12-15 |
| FR1167318A (en) | 1958-11-24 |
| NL205007A (en) | 1959-12-15 |
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