GB820547A - Sintered photoconducting layers - Google Patents
Sintered photoconducting layersInfo
- Publication number
- GB820547A GB820547A GB32841/55A GB3284155A GB820547A GB 820547 A GB820547 A GB 820547A GB 32841/55 A GB32841/55 A GB 32841/55A GB 3284155 A GB3284155 A GB 3284155A GB 820547 A GB820547 A GB 820547A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chloride
- solvent
- mixture
- cadmium
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 4
- 239000002904 solvent Substances 0.000 abstract 4
- 229910052709 silver Inorganic materials 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 239000005388 borosilicate glass Substances 0.000 abstract 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 abstract 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- KPWJBEFBFLRCLH-UHFFFAOYSA-L Cadmium bromide Inorganic materials Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 abstract 1
- OKIIEJOIXGHUKX-UHFFFAOYSA-L Cadmium iodide Inorganic materials [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical compound OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- 239000012190 activator Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 235000019270 ammonium chloride Nutrition 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 abstract 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 238000012216 screening Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 abstract 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S84/00—Music
- Y10S84/19—Light sensitive resistor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photoreceptors In Electrophotography (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Hybrid Cells (AREA)
Abstract
820,547. Photo-electric cells. RADIO CORPORATION OF AMERICA. Nov. 16, 1955 [Dec. 3, 1954], No. 32841/55. Class 37. A method for producing a photoconductive layer comprises the step of forming a mixture including a substance from the group cadmium sulphide, selenide and sulphoselenide and a solvent therefor, adding to the mixture activator proportions of a material from the group silver and copper and of a material from the group chlorine, bromine and iodine, crystallizing the substance from the solvent, and removing all the solvent by heating to leave a continuous layer of interlocked sintered crystals. The solvent may consist of cadmium chloride, bromide, or iodide and ammonium chloride may be added to it to convert any oxide to chloride. In one example 100 grams of cadmium sulphide, 10 grams of cadmium chloride, 1.7 ml. of 0.1 molar solution of copper chloride and 500 ml. of water are mixed in a blender, the mixture sprayed or brushed on a borosilicate glass plate and the assembly fired at 600‹ C. in a restricted air supply. Mica, quartz, or ceramic may be used instead of borosilicate glass as a base. The copper chloride may alternatively be introduced into the mixture by volatilization during the firing. A photo-conductive cell may be completed by applying electrodes in the form of silver dispersed in a resin to the layer, or by silk screening and evaporating, spraying, or sputtering on, Al, Pt, Ag, Au electrodes. Alternatively electrodes, e.g. comprising interdigitating fingers 25, may be formed on the baseplate 23 before the layer 21 is applied, as by exposure of a heated glass base to the vapour of silicon, tin, or titanium chloride followed by treatment in a reducing atmosphere, or by application of stannic chloride dissolved in absolute alcohol and glacial acetic acid. Such a cell exhibits a panchromatic response and has a high speed of response.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US473001A US2765385A (en) | 1954-12-03 | 1954-12-03 | Sintered photoconducting layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB820547A true GB820547A (en) | 1959-09-23 |
Family
ID=23877773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB32841/55A Expired GB820547A (en) | 1954-12-03 | 1955-11-16 | Sintered photoconducting layers |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US2765385A (en) |
| JP (1) | JPS327973B1 (en) |
| BE (1) | BE543274A (en) |
| GB (1) | GB820547A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170653A (en) * | 1985-02-06 | 1986-08-06 | Sharp Kk | Production of photoelectric conversion film and contact type image sensor |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USB287620I5 (en) * | 1954-12-01 | |||
| US3398316A (en) * | 1955-08-04 | 1968-08-20 | Army Usa | Infrared imaging device with photoconductive target |
| US3023657A (en) * | 1955-08-25 | 1962-03-06 | Baldwin Piano Co | Photoelectric musical instruments and the like |
| US3087838A (en) * | 1955-10-05 | 1963-04-30 | Hupp Corp | Methods of photoelectric cell manufacture |
| US3019404A (en) * | 1955-12-22 | 1962-01-30 | Bulova Res And Dev Lab Inc | Thermistors and methods of making same |
| US2879182A (en) * | 1956-05-31 | 1959-03-24 | Rauland Corp | Photosensitive devices |
| US2995660A (en) * | 1956-09-28 | 1961-08-08 | Sylvania Electric Prod | Detector |
| US3032731A (en) * | 1956-10-01 | 1962-05-01 | Dresser Ind | Photoconductive device and method of producing same |
| US2879360A (en) * | 1956-10-01 | 1959-03-24 | Lane Wells Co | Photoconductive device having a silicon dioxide protective layer and method of making same |
| US2884508A (en) * | 1956-10-01 | 1959-04-28 | Dresser Ind | Thin metal films and method of making same |
| US2884507A (en) * | 1956-10-01 | 1959-04-28 | Dresser Ind | Photoconductive device and method of making same |
| US2985757A (en) * | 1956-10-05 | 1961-05-23 | Columbia Broadcasting Syst Inc | Photosensitive capacitor device and method of producing the same |
| US2879362A (en) * | 1956-11-14 | 1959-03-24 | Rauland Corp | Photosensitive device |
| US3011379A (en) * | 1957-02-05 | 1961-12-05 | Baldwin Piano Co | Electronic musical instrument with photoelectric switching |
| BE565825A (en) * | 1957-03-19 | |||
| US2986534A (en) * | 1957-08-22 | 1961-05-30 | Gen Electric | Preparation of photoconductive material |
| US2999240A (en) * | 1957-11-01 | 1961-09-05 | Frederick H Nicoll | Photovoltaic cells of sintered material |
| US3013232A (en) * | 1957-12-16 | 1961-12-12 | Hupp Corp | Control of response curves for photoelectric cells |
| US2997408A (en) * | 1958-05-21 | 1961-08-22 | Itt | Process for producing photoconductive cadmium sulfide |
| US2965867A (en) * | 1959-01-02 | 1960-12-20 | Clairex Corp | Photosensitive element |
| US3187414A (en) * | 1959-02-05 | 1965-06-08 | Baldwin Co D H | Method of producing a photocell assembly |
| US3037941A (en) * | 1959-07-15 | 1962-06-05 | Thorn Electrical Ind Ltd | Photoconductive materials |
| US3116260A (en) * | 1960-01-29 | 1963-12-31 | Stern Frank | Semiconductors having equal numbers of acceptor and donor impurities |
| US2986717A (en) * | 1960-05-11 | 1961-05-30 | Barnes Eng Co | Thermistor bolometers |
| US3145126A (en) * | 1961-01-10 | 1964-08-18 | Clevite Corp | Method of making diffused junctions |
| US3188594A (en) * | 1962-01-25 | 1965-06-08 | Gen Electric | Thermally sensitive resistances |
| US3202609A (en) * | 1962-01-31 | 1965-08-24 | Ibm | High mobility photoconductor sintered shapes and process for their preparation |
| NL274816A (en) * | 1962-02-14 | |||
| US3238062A (en) * | 1962-04-20 | 1966-03-01 | Ibm | Photoconductor preparation |
| US3175091A (en) * | 1962-07-02 | 1965-03-23 | Ibm | Photoconductor material and stabilization thereof at low temperature |
| US3248261A (en) * | 1962-08-16 | 1966-04-26 | Ibm | Photoconducting layers |
| US3238150A (en) * | 1962-09-12 | 1966-03-01 | Xerox Corp | Photoconductive cadmium sulfide powder and method for the preparation thereof |
| US3379527A (en) * | 1963-09-18 | 1968-04-23 | Xerox Corp | Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium |
| US3287684A (en) * | 1964-02-27 | 1966-11-22 | Motson Services Inc | Electrical heating device |
| US3447234A (en) * | 1964-10-12 | 1969-06-03 | Singer General Precision | Photoconductive thin film cell responding to a broad spectral range of light input |
| US3519480A (en) * | 1967-01-13 | 1970-07-07 | Eastman Kodak Co | Process for treating photoconductive cadmium sulfide layers |
| US3452314A (en) * | 1967-05-22 | 1969-06-24 | Victory Eng Corp | Low noise thermistor assembly and method |
| JPS5029355B1 (en) * | 1968-09-20 | 1975-09-22 | ||
| US3754965A (en) * | 1971-04-05 | 1973-08-28 | Varian Associates | A method for making an electrophotographic plate |
| US4053863A (en) * | 1971-06-03 | 1977-10-11 | Varian Associates, Inc. | Electrophotographic photoconductive plate and the method of making same |
| US3913055A (en) * | 1972-12-29 | 1975-10-14 | Gen Electric | Photoconductive varistor |
| US3962778A (en) * | 1973-12-17 | 1976-06-15 | General Dynamics Corporation | Photodetector array and method of manufacturing same |
| US4001586A (en) * | 1975-05-09 | 1977-01-04 | Plessey Incorporated | Thick film sensor and infrared detector |
| US4145214A (en) * | 1977-05-25 | 1979-03-20 | Eastman Kodak Company | Co-crystalline organic photoconductors and heterogeneous compositions thereof |
| JPS6160065A (en) * | 1984-08-31 | 1986-03-27 | Matsushita Electric Ind Co Ltd | Photoelectric converter |
| ITMI20020231A1 (en) * | 2002-02-08 | 2003-08-08 | Milano Politecnico | ORGANIC SEMICONDUCTOR PHOTORETER |
| CN102265406B (en) * | 2008-11-27 | 2014-10-22 | 莫纳什大学 | Photovoltaic devices |
| KR102389516B1 (en) * | 2019-10-18 | 2022-04-21 | 성균관대학교산학협력단 | Photodetector and its manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2582850A (en) * | 1949-03-03 | 1952-01-15 | Rca Corp | Photocell |
| US2629039A (en) * | 1950-06-07 | 1953-02-17 | Weston Electrical Instr Corp | Selenium cell and process for manufacturing the same |
| US2706792A (en) * | 1951-05-25 | 1955-04-19 | Gen Electric | X-ray detection |
| US2651700A (en) * | 1951-11-24 | 1953-09-08 | Francois F Gans | Manufacturing process of cadmium sulfide, selenide, telluride photoconducting cells |
| US2668867A (en) * | 1952-03-21 | 1954-02-09 | Vitro Corp Of America | Photocell construction |
-
0
- BE BE543274D patent/BE543274A/xx unknown
-
1954
- 1954-12-03 US US473001A patent/US2765385A/en not_active Expired - Lifetime
-
1955
- 1955-11-16 GB GB32841/55A patent/GB820547A/en not_active Expired
- 1955-12-03 JP JP3149155A patent/JPS327973B1/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170653A (en) * | 1985-02-06 | 1986-08-06 | Sharp Kk | Production of photoelectric conversion film and contact type image sensor |
| GB2170653B (en) * | 1985-02-06 | 1989-03-22 | Sharp Kk | Production of photoelectric conversion film and contact type image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| BE543274A (en) | |
| JPS327973B1 (en) | 1957-09-21 |
| US2765385A (en) | 1956-10-02 |
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