GB815422A - Improvements in or relating to solid-state image intensifiers - Google Patents

Improvements in or relating to solid-state image intensifiers

Info

Publication number
GB815422A
GB815422A GB27596/57A GB2759657A GB815422A GB 815422 A GB815422 A GB 815422A GB 27596/57 A GB27596/57 A GB 27596/57A GB 2759657 A GB2759657 A GB 2759657A GB 815422 A GB815422 A GB 815422A
Authority
GB
United Kingdom
Prior art keywords
layer
substratum
insulating
electrodes
luminescence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27596/57A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB815422A publication Critical patent/GB815422A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)

Abstract

815,422. Luminescence, electroluminescence. PHILIPS ELECTRICAL INDUSTRIES Ltd. Sept. 2, 1957 [Sept. 5, 1956], No. 27596/57. Class 39(1). A solid state image intensifier comprises a luminescent layer 3 having an electrode 2 and a photosensitive layer 8 extending over a reliefed substratum of insulating material showing a relief of alternate raised and hollow portions 5, 6 and lying between the layers 3, 8 the hollow portion 6 extending through the substratum towards the luminescent layer 3 and the electrodes 7 for the photosensitive layer 8 being provided on the tops of the raised portions 5. As shown the insulating substratum 5, 6 is formed of fine-grained powdered glass or of polystyrene in a binder of urea formaldehyde and is provided with a plurality of parallel V- shaped grooves. In a second embodiment the substratum is constituted by the insulating envelope of a plurality of parallel thin metal wires having a diameter less than that of its insulating envelope, the thickness of which on the side of the layer 3 is less than half that of the thickness on the other side. The insulating envelope is preferably aluminium oxide deposited by cataphoresis. In another embodiment the substratum is constituted by a plurality of glass beads closely packed in a plane parallel to the layer 3, the halves of the beads adjacent this layer being embedded in a feebly conductive layer capable of diffusing the electric current. In Fig. 1 the luminescent layer 3 and the substratum 5, 6 are separated in the region of the hollow portion 6 by individual auxiliary electrode elements 4 the space between which may be black-lacquered to prevent optical feedback. Alternatively the material of the substratum may be opaque to prevent feedback. A thin reflecting insulating layer of titanium dioxide or magnesium oxide may be located between layer 3 and electrodes 4. The electrodes strips 7 may be located above the layer 8 and may be formed by metal strips on a transparent foil. The photosensitive layer may be of cadmium sulphide activated by copper and chlorine and the luminescent layer, 50 microns thick, may be of zinc sulphide activated by copper and aluminium in a binder of urea formaldehyde. Instead of this electroluminescent material the layer 3 may be of a phosphor whose luminescence is extinquished in the presence of an electric field e.g. of zinc sulphide activated by cadmium and gallium. In this case the layer 3 is flooded by a suitable auxiliary radiation and the luminescence is locally extinquished according to the pattern of the incident radiation.
GB27596/57A 1956-09-05 1957-09-02 Improvements in or relating to solid-state image intensifiers Expired GB815422A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL815422X 1956-09-05

Publications (1)

Publication Number Publication Date
GB815422A true GB815422A (en) 1959-06-24

Family

ID=19838860

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27596/57A Expired GB815422A (en) 1956-09-05 1957-09-02 Improvements in or relating to solid-state image intensifiers

Country Status (1)

Country Link
GB (1) GB815422A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2227445A (en) * 1989-01-25 1990-08-01 Honda Motor Co Ltd Synthetic resin molding apparatus
US5044919A (en) * 1988-12-09 1991-09-03 Honda Giken Kogyo Kabushiki Kaisha Synthetic resin molding apparatus
US5238387A (en) * 1988-12-09 1993-08-24 Honda Giken Kogyo Kabushiki Kaisha Apparatus for molding a product of synthetic resin

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5044919A (en) * 1988-12-09 1991-09-03 Honda Giken Kogyo Kabushiki Kaisha Synthetic resin molding apparatus
US5238387A (en) * 1988-12-09 1993-08-24 Honda Giken Kogyo Kabushiki Kaisha Apparatus for molding a product of synthetic resin
GB2227445A (en) * 1989-01-25 1990-08-01 Honda Motor Co Ltd Synthetic resin molding apparatus
GB2227445B (en) * 1989-01-25 1992-02-19 Honda Motor Co Ltd Synthetic resin molding apparatus

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