GB794753A - Improvements in or relating to electrical translating apparatus including a semiconductor - Google Patents
Improvements in or relating to electrical translating apparatus including a semiconductorInfo
- Publication number
- GB794753A GB794753A GB26692/55A GB2669255A GB794753A GB 794753 A GB794753 A GB 794753A GB 26692/55 A GB26692/55 A GB 26692/55A GB 2669255 A GB2669255 A GB 2669255A GB 794753 A GB794753 A GB 794753A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- current
- junctions
- semi
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000969 carrier Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/18—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying effective impedance of discharge tubes or semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
794,753. Semi-conductor devices; electric analogue calculating systems; power measurement; magnetic tests. WESTINGHOUSE ELECTRIC INTERNATIONAL CO. Sept. 19, 1955 [Sept. 28, 1954], No. 26692/55. Class 37. [Also in Group XXXVIII] A semi-conductor apparatus comprises a thin, rectangular, semi-conductor body mainly of material of one type conductivity in which the ratio of majority to minority carrier density is less than 10: 1 with a region of the opposite type on at least one of two opposite edges forming a PN junction therewith, a source of control current connected to current electrodes on the other two edges of the body, means for biasing the junction or junctions in the reverse direction and means for producing a magnetic field to deflect current carriers towards or away from the or one of the junctions to provide a current in an output circuit. In the device shown in Fig. 1 the junctions are produced by the crystal growth or alloying methods on a body 101 of slightly N-type Ge, Si or AIIIBV compound (particularly one of the nine compounds of Al, Ga, In with P, As, Sb). When subjected to a magnetic field perpendicular to the plane of the paper with the D.C. source 103 connected as shown between, e.g., soldered ohmic electrodes 105, 107, both holes and electrons are deflected towards junction 111 and away from junction 113. Both junctions are reverse biased by battery 119 so that only minority carriers, i.e. holes cross then to produce output voltages across resistors 121, 123. Electrons accumulate at junction 111 and provide a space charge effect assisting the magnetic field in deflecting minority carriers. In the absence of a field some minority carriers cross both junctions, the effect of the field being to enhance the flow across junction 111 and reduce that across 113, to give an output voltage across terminals 125, 127 proportional to field strength and input current. The magnitude of the field may be measured if a constant amplitude A.C. source replaces source 103, and the device may be used as a multiplier in a computer if one variable is expressed as a magnetic field and the other as a current. A mainly P type body may alternatively be used with appropriately poled bias supplies. In either case the ratio of majority to minority carrier density should not exceed 10: 1. The device has the advantage over a Hall plate that the output is roughly independent of the size of the semi-conductor plate. An embodiment using the device in a temperature measuring system is also described (see Group XXXVIII). Power measurement.-The circuit shown in Fig. 3 uses a device as described above to measure power in an A.C. circuit. The load 344 in the circuit is wired in series with the energizing winding 330 of electromagnet 332 in the air gap of which the semi-conductor body is situated, while the ohmic electrodes 305, 307 are connected across the load to receive a current proportional to the instantaneous voltage across it. Separate junction bias supplies 319a, 319b are used, application of unwanted A.C. bias from the load being prevented by connecting said batteries to the centre taps of potentiometers 318, 320 connected across electrodes 305, 307. The output voltage across terminals 325, 327 is integrated by capacitor 348 co-operating with D.C. voltmeter 346 which indicates power.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US794753XA | 1954-09-28 | 1954-09-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB794753A true GB794753A (en) | 1958-05-07 |
Family
ID=22150799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB26692/55A Expired GB794753A (en) | 1954-09-28 | 1955-09-19 | Improvements in or relating to electrical translating apparatus including a semiconductor |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB794753A (en) |
-
1955
- 1955-09-19 GB GB26692/55A patent/GB794753A/en not_active Expired
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