GB773702A - Method of producing coatings from hard high-melting point nitrides - Google Patents
Method of producing coatings from hard high-melting point nitridesInfo
- Publication number
- GB773702A GB773702A GB6372/55A GB637255A GB773702A GB 773702 A GB773702 A GB 773702A GB 6372/55 A GB6372/55 A GB 6372/55A GB 637255 A GB637255 A GB 637255A GB 773702 A GB773702 A GB 773702A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ammonia
- halide
- nitride
- melting point
- nitrides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
Abstract
In a method of coating metallic or non-metallic surfaces with nitrides of metals of the fourth and fifth groups of the periodic system, a halide of the desired metal is caused to react with ammonia in the presence of the surface to be coated at a temperature above the decomposition temperature of the complex compounds formed between the halide and ammonia. The ammonia and the halide may be introduced separately into the reaction chamber, or the halide may be formed, as by passing hydrogen halide over the nitride of the nitride-forming metal, in the reaction chamber in a zone which has a lower temperature than the deposition zone and the ammonia introduced only into the deposition zone. The example describes the formation of a titanium nitride coating by reacting titanium tetrachloride with ammonia at a temperature above 650 DEG C. preferably 900 DEG -1200 DEG C., the titanium tetrachloride being introduced in a current of hydrogen. Reference has been directed by the comptroller to Specification 731,990.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE773702X | 1954-03-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB773702A true GB773702A (en) | 1957-05-01 |
Family
ID=6685091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6372/55A Expired GB773702A (en) | 1954-03-05 | 1955-03-03 | Method of producing coatings from hard high-melting point nitrides |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB773702A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4058579A (en) * | 1975-02-27 | 1977-11-15 | Union Carbide Corporation | Process for producing an improved boron nitride crucible |
| US4151325A (en) * | 1975-04-03 | 1979-04-24 | The United States Of America As Represented By The United States Department Of Energy | Titanium nitride thin films for minimizing multipactoring |
| US4209552A (en) * | 1975-04-03 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Thin film deposition by electric and magnetic crossed-field diode sputtering |
| US4279947A (en) * | 1975-11-25 | 1981-07-21 | Motorola, Inc. | Deposition of silicon nitride |
| US4535000A (en) * | 1982-11-22 | 1985-08-13 | Gordon Roy G | Chemical vapor deposition of titanium nitride and like films |
| US4699082A (en) * | 1983-02-25 | 1987-10-13 | Liburdi Engineering Limited | Apparatus for chemical vapor deposition |
| US4803127A (en) * | 1983-02-25 | 1989-02-07 | Liburdi Engineering Limited | Vapor deposition of metal compound coating utilizing metal sub-halides and coated metal article |
-
1955
- 1955-03-03 GB GB6372/55A patent/GB773702A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4058579A (en) * | 1975-02-27 | 1977-11-15 | Union Carbide Corporation | Process for producing an improved boron nitride crucible |
| US4151325A (en) * | 1975-04-03 | 1979-04-24 | The United States Of America As Represented By The United States Department Of Energy | Titanium nitride thin films for minimizing multipactoring |
| US4209552A (en) * | 1975-04-03 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Thin film deposition by electric and magnetic crossed-field diode sputtering |
| US4279947A (en) * | 1975-11-25 | 1981-07-21 | Motorola, Inc. | Deposition of silicon nitride |
| US4535000A (en) * | 1982-11-22 | 1985-08-13 | Gordon Roy G | Chemical vapor deposition of titanium nitride and like films |
| US4699082A (en) * | 1983-02-25 | 1987-10-13 | Liburdi Engineering Limited | Apparatus for chemical vapor deposition |
| US4803127A (en) * | 1983-02-25 | 1989-02-07 | Liburdi Engineering Limited | Vapor deposition of metal compound coating utilizing metal sub-halides and coated metal article |
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