GB759012A - Semiconductor electric signal translating devices and methods of making them - Google Patents

Semiconductor electric signal translating devices and methods of making them

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Publication number
GB759012A
GB759012A GB2163451A GB2163451A GB759012A GB 759012 A GB759012 A GB 759012A GB 2163451 A GB2163451 A GB 2163451A GB 2163451 A GB2163451 A GB 2163451A GB 759012 A GB759012 A GB 759012A
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GB
United Kingdom
Prior art keywords
germanium
electrode
type
sept
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2163451A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US184870A external-priority patent/US2950425A/en
Priority claimed from US184869A external-priority patent/US2792538A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB759012A publication Critical patent/GB759012A/en
Expired legal-status Critical Current

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Abstract

759,012. Heat-treating semi-conductor material; coating by vapour deposition. WESTERN ELECTRIC CO., Inc. Sept. 14, 1951 [Sept. 14, 1950; Sept. 14, 1950], No. 21634/51. Classes 72 and 82(2). [Also in Group XXXVI] A signal translating device comprises a metallic electrode which is embedded in, or bonded to a germanium or silicon body, and the region of the body in the vicinity of the electrode has its significant impurity content modified. In one example, an electric current is passed through an unpointed gold wire 25 applied to the surface of an N-type germanium wafer 22 until the germanium fuses. The gold alloys with the germanium and Fig. 2 shows the resulting physical bond; a thin region P is converted to P-type conductivity by diffusion of the gold. The arrangement provides an improvised rectifying contact. The wire may be pressed into the fused body so that it is embedded in the germanium. Two adjoining electrodes of this type may be provided to form a transistor. Various embodiments are described. The electrode may include a significant impurity which is introduced into the semi-conductor body either during the embedding or bonding operation or by subsequent heat treatment. Alternatively, conductivity inversion or modification may be carried out by thermal treatment during, or after, bonding without introduction of impurity. Heating may be effected by passing current through the electrode or by an electric arc, and may be carried out in vacuo-inert gas or air. The electrode can also consist of an iron-nickel alloy, platinum, tantalum, or tungsten. Coating of the electrode with acceptor or donor material may be effected by heating a wire in a vapour, of for example antimony or phosphorus. It improves transistor properties if the emitter used on N-type material and/or the collector used on P-type material comprise a major portion of acceptor material and a minor portion of donor material so that the structure finally has an NPN formation. The conductivity types and acceptors and donors may be interchanged to achieve the same result. Silicon or germanium may be used as semiconductor material. Copper is included as an example of an acceptor impurity. Specifications 632,942, 632,980, 694,021, 700,231, 700,232 [Group XXXVI], and 721,671 are referred to.
GB2163451A 1950-09-14 1951-09-14 Semiconductor electric signal translating devices and methods of making them Expired GB759012A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US184870A US2950425A (en) 1950-09-14 1950-09-14 Semiconductor signal translating devices
US184869A US2792538A (en) 1950-09-14 1950-09-14 Semiconductor translating devices with embedded electrode

Publications (1)

Publication Number Publication Date
GB759012A true GB759012A (en) 1956-10-10

Family

ID=26880550

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2163451A Expired GB759012A (en) 1950-09-14 1951-09-14 Semiconductor electric signal translating devices and methods of making them

Country Status (6)

Country Link
BE (1) BE505814A (en)
CH (1) CH302296A (en)
DE (1) DE977615C (en)
FR (1) FR1038658A (en)
GB (1) GB759012A (en)
NL (2) NL162993B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525146A (en) * 1965-12-11 1970-08-25 Sanyo Electric Co Method of making semiconductor devices having crystal extensions for leads

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DE977615C (en) 1967-08-31
BE505814A (en) 1900-01-01
NL90092C (en) 1900-01-01
CH302296A (en) 1954-10-15
NL162993B (en)
FR1038658A (en) 1953-09-30

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