GB742172A - Improvements in barrier layer cells - Google Patents

Improvements in barrier layer cells

Info

Publication number
GB742172A
GB742172A GB2488051A GB2488051A GB742172A GB 742172 A GB742172 A GB 742172A GB 2488051 A GB2488051 A GB 2488051A GB 2488051 A GB2488051 A GB 2488051A GB 742172 A GB742172 A GB 742172A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
impurity
heating
conductivity type
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2488051A
Inventor
Ernst Billig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB2488051A priority Critical patent/GB742172A/en
Priority to GB834555A priority patent/GB742239A/en
Priority to GB834455A priority patent/GB742238A/en
Priority to GB834355A priority patent/GB742237A/en
Publication of GB742172A publication Critical patent/GB742172A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C7/00—Multicolour photographic processes or agents therefor; Regeneration of such processing agents; Photosensitive materials for multicolour processes
    • G03C7/46—Subtractive processes not covered by the group G03C7/26; Materials therefor; Preparing or processing such materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Abstract

742,172. Semiconductor devices. ASSOCIATED ELECTRICAL INDUSTRIES, Ltd. Oct. 23, 1952 [Oct. 24, 1951], No. 24880/51. Class 37. A PN junction is produced by heating a clearly defined portion of a block of semiconductor material of one conductivity type, while maintaining the rest of the block substantially at room temperature. The conversion of one type of conductivity to the other may be effected merely by heating and subsequent quenching, or by heating in the presence of a donor or acceptor impurity in liquid or gas form, so that diffusion takes place up to the " cold " boundary. The remaining portion of the block may be held cool by embedding in a sheath or bath maintained at a constant temperature. P-type germanium may constitute the semiconductor, and nitrogen the donor impurity. The Provisional Specification describes other methods of producing PN junctions, viz. (1) significant impurity is diffused into part of a semiconductor body by passing a current pulse in the reverse direction between the body and metal electrode containing the impurity; (2) a thin film of semiconductor of one conductivity type may be deposited by evaporation, sputtering, or electrolytic or chemical deposition on to a body of the opposite conductivity type; an insulating layer may also be provided between the N and P portions; (3) N and P portions of the same or different semiconductor materials are prepared independently and fused together by passing an electric current through the junction; the component portions are preferably single with their axes coincident. A plurality of PN junctions in series may be provided. Silicon, copper oxide, and cadmium sulphide are also specified as suitable semiconductors. Reference is made to photo-electric, thermo-electric, and transistor properties.
GB2488051A 1951-10-24 1951-10-24 Improvements in barrier layer cells Expired GB742172A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB2488051A GB742172A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB834555A GB742239A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB834455A GB742238A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB834355A GB742237A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2488051A GB742172A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells

Publications (1)

Publication Number Publication Date
GB742172A true GB742172A (en) 1955-12-21

Family

ID=10218716

Family Applications (4)

Application Number Title Priority Date Filing Date
GB834355A Expired GB742237A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB834555A Expired GB742239A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB834455A Expired GB742238A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB2488051A Expired GB742172A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells

Family Applications Before (3)

Application Number Title Priority Date Filing Date
GB834355A Expired GB742237A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB834555A Expired GB742239A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells
GB834455A Expired GB742238A (en) 1951-10-24 1951-10-24 Improvements in barrier layer cells

Country Status (1)

Country Link
GB (4) GB742237A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1083937B (en) * 1956-04-19 1960-06-23 Intermetall Process for the production of p-n junctions in semiconductor bodies by alloying
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
US3116175A (en) * 1958-01-27 1963-12-31 Marvalaud Inc Method for forming bicrystalline specimens
US3156592A (en) * 1959-04-20 1964-11-10 Sprague Electric Co Microalloying method for semiconductive device
NL239785A (en) * 1959-06-02
US3078328A (en) * 1959-11-12 1963-02-19 Texas Instruments Inc Solar cell
NL266513A (en) * 1960-07-01
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3173816A (en) * 1961-08-04 1965-03-16 Motorola Inc Method for fabricating alloyed junction semiconductor assemblies
US3163562A (en) * 1961-08-10 1964-12-29 Bell Telephone Labor Inc Semiconductor device including differing energy band gap materials
US3303549A (en) * 1964-03-23 1967-02-14 Sanders Associates Inc Method of making semiconductor devices utilizing vacuum welding

Also Published As

Publication number Publication date
GB742237A (en) 1955-12-21
GB742238A (en) 1955-12-21
GB742239A (en) 1955-12-21

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