GB732891A - Improvements in and relating to the production of thin layers of chemical compounds on surfaces - Google Patents
Improvements in and relating to the production of thin layers of chemical compounds on surfacesInfo
- Publication number
- GB732891A GB732891A GB8191/49A GB819149A GB732891A GB 732891 A GB732891 A GB 732891A GB 8191/49 A GB8191/49 A GB 8191/49A GB 819149 A GB819149 A GB 819149A GB 732891 A GB732891 A GB 732891A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- compound
- atmosphere
- gas
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
732,891. Coating by vapour deposition. MEGATRON, Ltd., VESZI, G. A., and MARKUS, P. March 22, 1950 [March 25, 1949], No. 8191/49. Class 82 (2). [Also in Groups XI, XV, XX, XXXVI and XL (a)] A process for the production upon a support, such as glass, of a transparent and strongly adnerent layer of at least one chemical compound containing a metal comprises subjecting the surface of the support to a discharge between a cathode and an anode, the support being placed on the anode and the cathode being composed of a material including the metal, and the discharge taking place in an atmosphere including a gas of high sputtering speed and a gas which reacts with the metal to produce the compound, the concentration of the reactive gas being controlled so as substantially to avoid the deposit in the compound of the free metal. A metallic layer may be afterwards deposited upon the layer of the compound. The gas of high sputtering speed may be one of the rare gases such as argon, forming not less than 5 per cent and not more than 95 per cent of the atmosphere in which the discharge takes place. A mixture of 6 per cent by volume of oxygen and 94 per cent of argon is referred to in the Provisional Specification. The reactive component of the atmosphere may be an element such as oxygen or a compound such as water vapour, sulphuretted hydrogen or an oxide of nitrogen, or air. The presence of nitrogen in the gas mixture will slow down the sputtering process if present in a high concentration. The cathode may be subjected to a preliminary discharge in an atmosphere which includes a reactive gas such as air or water vapour before the compound is deposited on the support, which atmosphere may contain a greater proportion of reactive gas and a lesser proportion, which may be negligible, of the gas of high sputtering speed than the atmosphere in which the second discharge takes place. Both atmospheres may contain the same reactive gas. The cathode may be formed of, or from, a substantially pure metallic element such as cadmium. There may be produced upon the support, in addition to the metal compound, a further metal or a further metal compound, the cathode being composed of an alloy of the metals or built up of parts of the metals. Cathodes of tin, antimony, bismuth or alloys or composite structures thereof are referred to. The cathode may have a surface composed of a chemical compound, a mixture of compounds or a mixture thereof with an element or elements. The process can be carried out by the apparatus shown in the drawing which comprises an opentop sputtering chamber 10 with a removable lid 11, both being of steel and having engaging surfaces which are carefully lapped so that with moderate greasing adequate vacuum sealing can be obtained. The chamber is double-walled to provide a water jacket. Insulatedly supported from the lid 11 is the sputtering cathode assembly 15 comprising a water-cooled hollow steel body 15a and a metal disc 15b. The lid 11 and the cathode assembly 15 are preferably mounted on a spring-balanced lever or on counter-weights to facilitate removal. A plate 18 on which are placed articles to be treated has apertures 19 which lead to an exhaust conduit 20 connected to a two-stage vacuum pump through a stop-cock 21. The pipe assembly shown on the right is connected to the atmosphere and to supplies for the requisite gases. A high-voltage direct-current source is connected between the cathode assembly 15 and the earthed plate 18 through the rectified circuit shown. Various applications of supports treated in the above manner are referred to.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8191/49A GB732891A (en) | 1949-03-25 | 1949-03-25 | Improvements in and relating to the production of thin layers of chemical compounds on surfaces |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8191/49A GB732891A (en) | 1949-03-25 | 1949-03-25 | Improvements in and relating to the production of thin layers of chemical compounds on surfaces |
Publications (1)
Publication Number | Publication Date |
---|---|
GB732891A true GB732891A (en) | 1955-06-29 |
Family
ID=9847593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8191/49A Expired GB732891A (en) | 1949-03-25 | 1949-03-25 | Improvements in and relating to the production of thin layers of chemical compounds on surfaces |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB732891A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2125827A1 (en) * | 1970-05-20 | 1972-02-17 | Triplex Safety Glass Co | Method and device for dusting an electrically conductive metal oxide coating |
FR2404052A1 (en) * | 1977-09-26 | 1979-04-20 | Ppg Industries Inc | METHOD OF CONTROLLING A DEPOSIT BY CATHODIC SPRAYING OF A METAL OXIDE FILM, ESPECIALLY INDIUM OXIDE |
FR2415864A1 (en) * | 1978-01-30 | 1979-08-24 | American Cyanamid Co | PROCESS FOR PREPARING CADMIUM STANNATE FILMS |
FR2462487A1 (en) * | 1979-07-26 | 1981-02-13 | Siemens Ag | PROCESS FOR PRODUCING TRANSPARENT AND CONDUCTIVE INDIUM OXIDE LAYERS OF ELECTRICITY |
US4806221A (en) * | 1987-03-26 | 1989-02-21 | Ppg Industries, Inc. | Sputtered films of bismuth/tin oxide |
US5178966A (en) * | 1987-03-26 | 1993-01-12 | Ppg Industries, Inc. | Composite with sputtered films of bismuth/tin oxide |
-
1949
- 1949-03-25 GB GB8191/49A patent/GB732891A/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2125827A1 (en) * | 1970-05-20 | 1972-02-17 | Triplex Safety Glass Co | Method and device for dusting an electrically conductive metal oxide coating |
FR2404052A1 (en) * | 1977-09-26 | 1979-04-20 | Ppg Industries Inc | METHOD OF CONTROLLING A DEPOSIT BY CATHODIC SPRAYING OF A METAL OXIDE FILM, ESPECIALLY INDIUM OXIDE |
FR2415864A1 (en) * | 1978-01-30 | 1979-08-24 | American Cyanamid Co | PROCESS FOR PREPARING CADMIUM STANNATE FILMS |
FR2462487A1 (en) * | 1979-07-26 | 1981-02-13 | Siemens Ag | PROCESS FOR PRODUCING TRANSPARENT AND CONDUCTIVE INDIUM OXIDE LAYERS OF ELECTRICITY |
US4806221A (en) * | 1987-03-26 | 1989-02-21 | Ppg Industries, Inc. | Sputtered films of bismuth/tin oxide |
US5178966A (en) * | 1987-03-26 | 1993-01-12 | Ppg Industries, Inc. | Composite with sputtered films of bismuth/tin oxide |
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