GB708970A - Process for the preparation of finely divided metal oxides and silicon dioxide - Google Patents

Process for the preparation of finely divided metal oxides and silicon dioxide

Info

Publication number
GB708970A
GB708970A GB159/52A GB15952A GB708970A GB 708970 A GB708970 A GB 708970A GB 159/52 A GB159/52 A GB 159/52A GB 15952 A GB15952 A GB 15952A GB 708970 A GB708970 A GB 708970A
Authority
GB
United Kingdom
Prior art keywords
oxygen
chloride
mixture
per cent
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB159/52A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saeurefabrik Schweizerhall
Original Assignee
Saeurefabrik Schweizerhall
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saeurefabrik Schweizerhall filed Critical Saeurefabrik Schweizerhall
Publication of GB708970A publication Critical patent/GB708970A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/183Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14Methods for preparing oxides or hydroxides in general
    • C01B13/20Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C01B13/22Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00Compounds of titanium
    • C01G23/04Oxides; Hydroxides
    • C01G23/047Titanium dioxide
    • C01G23/07Producing by vapour phase processes, e.g. halide oxidation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity
    • C01P2006/82Compositional purity water content

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Silicon Compounds (AREA)

Abstract

<PICT:0708970/III/1> In the production of metal or silicon oxides by decomposing a mixture of metal or silicon chloride vapour and oxygen - containing gases, in which the mixture is ignited to a flame with the aid of an auxiliary flame produced by separately introduced gases, the moisture content of the gas current which first comes into contact with the outflowing reaction mixture is maintained below the limit above which a crust formation takes place at the contact zone within 12 hours. The permissible moisture content varies with the nature of the chloride being decomposed, the discharge velocity of the gases, their temperature &c. but is always less than 1 per cent. by volume, and may be 0.01 per cent. Suitable combustible gases are hydrogen, carbon monoxide, coal gas, petroleum or oil vapour, or mixtures thereof. Carbon monoxide is especially suitable, yielding no hydrochloric acid, but its combustion can only be effected in the presence of 0.01 per cent. water vapour, or more depending on the gas velocities, the burner area etc.; to this end water vapour, or hydrogen, or hydrogen-containing combustible material is added to the carbon monoxide or oxygen-containing gas, whichever is not led into immediate contact with the chloride reaction mixture. The latter is produced by introducing oxygen-containing gases into the distillation or sublimation chamber, the mixture being then preheated, or by atomizing heated liquid metal chloride under pressure with the oxygen-containing gas. Pure oxygen may be used, or it may be admixed with nitrogen, carbon dioxide &c. The inert gas may alternatively be introduced into the reaction chamber between the chloride-oxygen mixture and the flame-producing gas, its moisture content being subject to the above considerations. The reaction may contain from a deficiency up to 20-50 per cent. of oxygen for the combustion of the chloride. Suitable burners consist of concentric tubes, the chloride-oxygen mixture passing through one tube and the combustible gases passing through outer, and in some cases also inner, concentric tubes. In a modification shown in Fig. 5, oxygen with a hydrogen and moisture content of 0.1 per cent. by volume each passes through the central tube 13, a mixture of titanium chloride, oxygen and nitrogen with a small content of aluminium and silicon chlorides through all of the tubes 14, carbon monoxide with a moisture content of 0.001 per cent. by volume through the free space between tubes 15, 13, and oxygen through the space between tubes 16, 15. The temperature of the reaction chamber is maintained at 1200 DEG C. The decomposition of titanium, zirconium, iron, aluminium and silicon chlorides, is indicated. Specification 661,685 is referred to.
GB159/52A 1951-02-07 1952-01-02 Process for the preparation of finely divided metal oxides and silicon dioxide Expired GB708970A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH708970X 1951-02-07

Publications (1)

Publication Number Publication Date
GB708970A true GB708970A (en) 1954-05-12

Family

ID=4530605

Family Applications (1)

Application Number Title Priority Date Filing Date
GB159/52A Expired GB708970A (en) 1951-02-07 1952-01-02 Process for the preparation of finely divided metal oxides and silicon dioxide

Country Status (5)

Country Link
BE (1) BE508951A (en)
CH (1) CH295398A (en)
DE (1) DE948415C (en)
FR (1) FR1054385A (en)
GB (1) GB708970A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262561A2 (en) * 1986-09-29 1988-04-06 Mitsubishi Jushi Engineering Co., Ltd. Method of burning waste gases from semiconductor-manufacturing processes and an apparatus for burning the waste gases
FR2612606A1 (en) * 1987-03-18 1988-09-23 Air Liquide METHOD AND DEVICE FOR DESTRUCTION OF TOXIC GASEOUS EFFLUENTS
EP0311317A2 (en) * 1987-10-06 1989-04-12 Toyo Sanso Co., Ltd. Combustion method for specific exhaust gases containing deleterious substances
WO2007127232A2 (en) * 2006-04-28 2007-11-08 Cabot Corporation Process for the production of fumed silica

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1151337B (en) * 1957-11-15 1963-07-11 Pittsburgh Plate Glass Co Process for the production of titanium dioxide pigments
DE2849851C3 (en) * 1978-11-17 1981-11-05 Degussa Ag, 6000 Frankfurt Process for the pyrogenic production of finely divided oxide of a metal and / or a metalloid
DE2904199A1 (en) * 1979-02-05 1980-08-07 Degussa METHOD FOR THE GUIDED PRODUCTION OF SILICON BY MEANS OF FLAME HYDROLYSIS
DE4009299A1 (en) * 1989-04-19 1990-10-25 Degussa (ALPHA) ALUMINUM OXIDE AND METHOD FOR THE PRODUCTION THEREOF
DE4102328A1 (en) * 1991-01-26 1992-07-30 Degussa Pyrogenic niobium oxide - useful for prodn. of catalysts, ceramics and glass
DE102018127955A1 (en) 2018-11-08 2020-05-14 Umicore Ag & Co. Kg Catalytically active particle filter with high filtration efficiency
DE102018127957A1 (en) 2018-11-08 2020-05-14 Umicore Ag & Co. Kg Particle filter with multiple coatings
DE102018127953A1 (en) 2018-11-08 2020-05-14 Umicore Ag & Co. Kg Wall flow filter with high filtration efficiency

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262561A2 (en) * 1986-09-29 1988-04-06 Mitsubishi Jushi Engineering Co., Ltd. Method of burning waste gases from semiconductor-manufacturing processes and an apparatus for burning the waste gases
EP0262561A3 (en) * 1986-09-29 1988-08-03 Mitsubishi Jushi Engineering Co., Ltd. Method of burning waste gases from semiconductor-manufacturing processes and an apparatus for burning the waste gases
FR2612606A1 (en) * 1987-03-18 1988-09-23 Air Liquide METHOD AND DEVICE FOR DESTRUCTION OF TOXIC GASEOUS EFFLUENTS
EP0285485A1 (en) * 1987-03-18 1988-10-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method and device for destroying toxic gaseous effluents
EP0311317A2 (en) * 1987-10-06 1989-04-12 Toyo Sanso Co., Ltd. Combustion method for specific exhaust gases containing deleterious substances
EP0311317A3 (en) * 1987-10-06 1990-03-28 Toyo Sanso Co., Ltd. Combustion method for specific exhaust gases containing deleterious substances
WO2007127232A2 (en) * 2006-04-28 2007-11-08 Cabot Corporation Process for the production of fumed silica
WO2007127232A3 (en) * 2006-04-28 2009-10-01 Cabot Corporation Process for the production of fumed silica
US7910081B2 (en) 2006-04-28 2011-03-22 Cabot Corporation Process for the production of fumed silica

Also Published As

Publication number Publication date
DE948415C (en) 1956-08-30
FR1054385A (en) 1954-02-10
BE508951A (en)
CH295398A (en) 1953-12-31

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