GB707978A - Improvements in or relating to methods of growing crystals - Google Patents
Improvements in or relating to methods of growing crystalsInfo
- Publication number
- GB707978A GB707978A GB1279450A GB1279450A GB707978A GB 707978 A GB707978 A GB 707978A GB 1279450 A GB1279450 A GB 1279450A GB 1279450 A GB1279450 A GB 1279450A GB 707978 A GB707978 A GB 707978A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solution
- temperature
- tube
- growing
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
<PICT:0707978/III/1> Crystals, e.g. of ethylene diamine tartrate or lithium sulphate, are grown from seed immersed in a supersaturated solution of the salt by cooling (or heating in the case of substances such as lithium sulphate, which have a negative solubility/temperature coefficient,) the solution from one predetermined temperature to another, and then bringing the temperature back to its initial value while maintaining the solution supersaturated by passing it during this stage at an appropriate temperature through recharging apparatus containing solid solute. The cooling (or heating) and recharging steps are repeated until the crystals are the desired size. Limitation in size of crystals grown by the falling temperature method due to instability of certain solutions outside certain temperature ranges is thereby avoided. The Figure shows suitable recharging apparatus comprising a wide bore tube 2 containing solution 1 and solute 12 closed by end caps 3, the upper having a liquid inlet 4, a funnel 13 for introducing solid solute and the lower having a liquid outlet 4. A filter 10 is interposed between outlet and solute. The liquid inlets and outlets have enlargements 5 in which are thermometers 8. The temperature of the solution is controlled by heater 9 surrounding the tube 2 and auxiliary heaters 19, 20 surrounding tubes 17, 18 connected to the liquid inlet and outlet. A pump 21 draws solution from the tube 2 and feeds it to the growing tank through a tube 23 of heat insulating material having outlet holes 25, solution being withdrawn from the growing tank by the U tube 22. The flow of solution may however be in the reverse direction, the filter 10 then being at the top of tube 2. The time the recharging apparatus is connected to a growing tank may be much less than the time crystals are growing by the fall (or rise) in temperature and one apparatus may therefore serve a number of growing tanks. When the recharging apparatus is connected to a growing tank the saturation temperature of the solution in the tank is continuously measured by the apparatus described in Specification 684,042, [Group XX], and the temperature in the tank maintained about 2 DEG C. below (or above) the saturation temperature to keep the solution supersaturated. When not in use the tubes 22 and 24 may dip in another container for solution and the circulation of solution through the saturator maintained continuously. Specification 707,976 also is referred to.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1279450A GB707978A (en) | 1950-05-22 | 1950-05-22 | Improvements in or relating to methods of growing crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1279450A GB707978A (en) | 1950-05-22 | 1950-05-22 | Improvements in or relating to methods of growing crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
GB707978A true GB707978A (en) | 1954-04-28 |
Family
ID=10011265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1279450A Expired GB707978A (en) | 1950-05-22 | 1950-05-22 | Improvements in or relating to methods of growing crystals |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB707978A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1072966B (en) * | 1960-01-14 | Quartz S. Silice, Societe Anonyme, Paris | Methods and devices for accelerating growth in the growth of large single crystals | |
CN112484398A (en) * | 2020-11-24 | 2021-03-12 | 无锡锡源真空设备有限公司 | Vacuum drying furnace |
-
1950
- 1950-05-22 GB GB1279450A patent/GB707978A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1072966B (en) * | 1960-01-14 | Quartz S. Silice, Societe Anonyme, Paris | Methods and devices for accelerating growth in the growth of large single crystals | |
CN112484398A (en) * | 2020-11-24 | 2021-03-12 | 无锡锡源真空设备有限公司 | Vacuum drying furnace |
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