GB693726A - High current gain semi-conductor devices - Google Patents
High current gain semi-conductor devicesInfo
- Publication number
- GB693726A GB693726A GB9046/51A GB904651A GB693726A GB 693726 A GB693726 A GB 693726A GB 9046/51 A GB9046/51 A GB 9046/51A GB 904651 A GB904651 A GB 904651A GB 693726 A GB693726 A GB 693726A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- collector
- electrode
- semi
- inches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000463 material Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
693,726. Semi-conductor amplifiers. RADIO CORPORATION OF AMERICA. April 18, 1951 [April 21, 1950], No. 9046/51. Class 40 (iv). [Also in Group XL (c)] The current gain characteristic of a transistor is increased by a forming treatment in which a condenser is suddenly discharged between the base and collector electrodes, while biasing voltages are applied to the electrodes, and the collector is spaced at least 0.01 inches from the emitter electrode. Fig. 2 shows a circuit arrangement in which a pulse from charged condenser 31 is applied by means of switch 32 in the reverse current direction between the point contact collector electrode 14 and base electrode 11. The emitter electrode is biased in the forward direction by means of a battery in series with a resistance, and the collector electrode is similarly biased in the reverse direction. The spacing between the emitter and collector electrodes at the time of the pulse is adjusted to about 0.015 inches. Experimental data is furnished to show that the process results in increased current gain, reduced base resistance and reduced output resistance when the treated device is subsequently operated as a normal transistor amplifier, but with the same spacing of about 0.015 inches between the emitter and collector electrodes. The resistivity of the semi-conductor material in this case is assumed to be high, i.e. between 10 and 20 ohm-centimetres. If the resistivity of the semi-conductor material is low, i.e. between 2 and 8 ohmcentimetres, the collector and emitter electrodes may be placed the normal distance apart (i.e. not more than 5 mils.) after the pulsing treatment has been applied at the increased spacing of about 0.015 inches. Alternatively, an auxiliary electrode, spaced at this distance and biased as the emitter, the normal emitter being disconnected, may be used during the pulsing treatment, and then removed or disconnected. Fig. 1 shows a suitable construction for the device. The semi-conductor material may consist of germanium, silicon, boron, selenium or tellurium.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US301198XA | 1950-04-21 | 1950-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB693726A true GB693726A (en) | 1953-07-08 |
Family
ID=21852611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9046/51A Expired GB693726A (en) | 1950-04-21 | 1951-04-18 | High current gain semi-conductor devices |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE502674A (en) |
| CH (1) | CH301198A (en) |
| FR (1) | FR1040717A (en) |
| GB (1) | GB693726A (en) |
| NL (2) | NL89628C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2913704A (en) * | 1954-07-06 | 1959-11-17 | Sylvania Electric Prod | Multiple emitter matrices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL187425A (en) * | 1953-05-14 |
-
0
- NL NL6901178.A patent/NL160604B/en unknown
- NL NL89628D patent/NL89628C/xx active
- BE BE502674D patent/BE502674A/xx unknown
-
1951
- 1951-04-17 CH CH301198D patent/CH301198A/en unknown
- 1951-04-18 GB GB9046/51A patent/GB693726A/en not_active Expired
- 1951-04-19 FR FR1040717D patent/FR1040717A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2913704A (en) * | 1954-07-06 | 1959-11-17 | Sylvania Electric Prod | Multiple emitter matrices |
Also Published As
| Publication number | Publication date |
|---|---|
| NL89628C (en) | 1900-01-01 |
| BE502674A (en) | 1900-01-01 |
| NL160604B (en) | 1900-01-01 |
| CH301198A (en) | 1954-08-31 |
| FR1040717A (en) | 1953-10-19 |
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