GB686915A - Improvements in or relating to crystal diodes and triodes - Google Patents
Improvements in or relating to crystal diodes and triodesInfo
- Publication number
- GB686915A GB686915A GB1442950A GB1442950A GB686915A GB 686915 A GB686915 A GB 686915A GB 1442950 A GB1442950 A GB 1442950A GB 1442950 A GB1442950 A GB 1442950A GB 686915 A GB686915 A GB 686915A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- rectifying
- electrodes
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 8
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 2
- 229910001369 Brass Inorganic materials 0.000 abstract 1
- 235000012469 Cleome gynandra Nutrition 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract 1
- 239000005751 Copper oxide Substances 0.000 abstract 1
- 239000001828 Gelatine Substances 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 240000007918 Tacca chantrieri Species 0.000 abstract 1
- 239000010951 brass Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910000431 copper oxide Inorganic materials 0.000 abstract 1
- 238000005323 electroforming Methods 0.000 abstract 1
- 229920000159 gelatin Polymers 0.000 abstract 1
- 235000019322 gelatine Nutrition 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 230000007306 turnover Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
686,915. Semi-conductor amplifiers. STANDARD TELEPHONES & CABLES, Ltd. June 1, 1951 [June 9, 1950; Aug. 25, 1950], Nos. 14429/50 and 21040/50. Class 40 (iv). [Also in Group XXXVI] An electric signal translating device comprises a disc or plate of semi-conductor which crystallizes in isotropic cubic lattice, having a base electrode of extended area, and a further electrode consisting of a metal film of area not less than 10<SP>-4</SP> sq. mm. and not greater than one sq. mm., which occupies a hole in a layer of insulation on the surface of the crystal. Fig. 1 shows a crystal diode comprising a block of semiconductor 1 consisting of silicon, germanium or lead sulphide covered by a layer of insulation 3, a hole in the layer 3 being filled with metal to form the rectifying contact. A layer 5 of silver or other metal is deposited to make contact with the electrode 4. The surface of the semi-conductor is plated to form base electrode 2. Compared with a point contact, the hole 4 has appreciable area lying between 10<SP>-4</SP> and 1 sq. mm. The characteristics of the rectifier can be modified by varying the area of the rectifying electrode, a larger area tending to reduce both forward and reverse resistance, but not in the same proportion. The " turnover voltage " (i.e. the point on the reverse characteristic at which instability occurs) is also affected by the hole size. A number of these diode rectifiers may be assembled in a pile with terminal washers, as is the practice with selenium or copper oxide rectifiers, to form bridge rectifiers or ring modulators. Terminal wires may be connected to the electrodes, or holders having spring contacts may be provided. More than one rectifying contact may be provided, as shown in Fig. 3, to form a crystal triode, and a further modification in Fig. 4 shows the combination of a cat's-whisker electrode 8 operatively associated with the rectifying contact 6. Additional rectifying contacts may be provided with the crystal triode arrangements as described in Specification 681,829. Donor or acceptor impurities may be added to the metal used for the rectifying electrodes, in conjunction with an electroforming process, to improve the current gain characteristic of crystal triodes as described in Specification 681,809, or gold may be used as described in Specification 686,907. The electrodes may be deposited by coating the crystal with prepared gelatine and photographing thereon an image of the electrodes, so that after development a stencil is formed through which the electrodes may be electro-plated on to the surface of the crystal. A brass or copper mounting block may be used to keep the device cool. Specification 686,948 also is referred to.
Priority Applications (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE503668D BE503668A (en) | 1950-06-09 | ||
GB1442950A GB686915A (en) | 1950-06-09 | 1950-06-09 | Improvements in or relating to crystal diodes and triodes |
FR63209D FR63209E (en) | 1949-07-29 | 1951-05-30 | Triodes using crystals such as germanium crystals |
ES0198242A ES198242A1 (en) | 1950-06-09 | 1951-06-08 | IMPROVEMENTS IN OR RELATING TO CRYSTAL DIODES AND TRiODES |
CH305857D CH305857A (en) | 1950-06-09 | 1951-06-08 | Electrical device comprising a body of semiconductor material. |
FR64122D FR64122E (en) | 1949-07-29 | 1952-04-04 | Triodes using crystals such as germanium crystals |
FR65238D FR65238E (en) | 1949-07-29 | 1952-07-18 | Triodes using crystals such as germanium crystals |
FR65380D FR65380E (en) | 1949-07-29 | 1952-11-25 | Triodes using crystals such as germanium crystals |
FR65573D FR65573E (en) | 1949-07-29 | 1953-02-27 | Triodes using crystals such as germanium crystals |
FR65867D FR65867E (en) | 1949-07-29 | 1953-04-24 | Triodes using crystals such as germainium crystals |
FR67258D FR67258E (en) | 1949-07-29 | 1954-08-03 | Triodes using crystals such as germanium crystals |
FR69063D FR69063E (en) | 1949-07-29 | 1955-03-03 | Triodes using crystals such as germanium crystals |
FR69069D FR69069E (en) | 1949-07-29 | 1955-04-07 | Triodes using crystals such as germanium crystals |
FR69071D FR69071E (en) | 1950-06-09 | 1955-06-10 | Triodes using crystals such as germanium crystals |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1442950A GB686915A (en) | 1950-06-09 | 1950-06-09 | Improvements in or relating to crystal diodes and triodes |
GB2104050 | 1950-08-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB686915A true GB686915A (en) | 1953-02-04 |
Family
ID=26250559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1442950A Expired GB686915A (en) | 1949-07-29 | 1950-06-09 | Improvements in or relating to crystal diodes and triodes |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE503668A (en) |
CH (1) | CH305857A (en) |
GB (1) | GB686915A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1258518B (en) * | 1962-06-29 | 1968-01-11 | Plessey Co Ltd | Method for manufacturing a semiconductor element with a perforated insulating layer over a recessed zone |
DE1197548B (en) * | 1955-11-04 | 1975-02-13 |
-
0
- BE BE503668D patent/BE503668A/xx unknown
-
1950
- 1950-06-09 GB GB1442950A patent/GB686915A/en not_active Expired
-
1951
- 1951-06-08 CH CH305857D patent/CH305857A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1197548B (en) * | 1955-11-04 | 1975-02-13 | ||
DE1258518B (en) * | 1962-06-29 | 1968-01-11 | Plessey Co Ltd | Method for manufacturing a semiconductor element with a perforated insulating layer over a recessed zone |
Also Published As
Publication number | Publication date |
---|---|
CH305857A (en) | 1955-03-15 |
BE503668A (en) |
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