GB665867A - Improvements in or relating to crystal triodes and semi-conductor materials therefor - Google Patents

Improvements in or relating to crystal triodes and semi-conductor materials therefor

Info

Publication number
GB665867A
GB665867A GB8905/49A GB890549A GB665867A GB 665867 A GB665867 A GB 665867A GB 8905/49 A GB8905/49 A GB 8905/49A GB 890549 A GB890549 A GB 890549A GB 665867 A GB665867 A GB 665867A
Authority
GB
United Kingdom
Prior art keywords
type
germanium
semi
remelted
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8905/49A
Inventor
Charles De Boismaison White
Simon Ernest Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB8905/49A priority Critical patent/GB665867A/en
Priority to FR1018849D priority patent/FR1018849A/en
Priority to CH289520D priority patent/CH289520A/en
Priority to FR61721D priority patent/FR61721E/en
Publication of GB665867A publication Critical patent/GB665867A/en
Priority to FR66309D priority patent/FR66309E/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
    • C25C3/06—Electrolytic production, recovery or refining of metals by electrolysis of melts of aluminium
    • C25C3/08—Cell construction, e.g. bottoms, walls, cathodes
    • C25C3/12—Anodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)

Abstract

665,867. Making germanium ingots; powder metallurgy. STANDARD TELEPHONES & CABLES, Ltd. March 31, 1950 [April 1, 1949], No. 8905/49. Drawings to Specification. Classes 83 (ii) and 83 (iv). [Also in Group XXXIX] An electric amplifying device comprises a semi-conducting body composed of uniformly distributed, small aggregates of atoms each of which aggregate has either P- or N-type rectification properties. The material is such that over any cross-section a random distribution of minute areas each providing either N- or P-type rectification exits. This results in P-type areas having, a high rectification ratio, which is not the case for homogeneous P-type crystals. One method of producing a semi-conductor of this type consists of heating germanium dioxide in pure dry hydrogen to produce pure germanium which is placed in graphite crucibles and remelted at low pressure in the presence of small amounts of oxygen, nitrogen, and water vapour. The proper amounts of gases to be added, which provide both donor and acceptor impurities, is determined experimentally in each case. The ingot is then rapidly cooled to provide the desired material. Alternatively the ingot may be remelted as above, but without the addition of the impurities, and the remelted ingot is continuously stirred while cooling, which has the effect of producing positive and negative ions. A third method consists in sintering a mixture of finely-ground homogeneous N-type and finely-ground homogeneous P-type germanium.
GB8905/49A 1906-09-03 1949-04-01 Improvements in or relating to crystal triodes and semi-conductor materials therefor Expired GB665867A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB8905/49A GB665867A (en) 1949-04-01 1949-04-01 Improvements in or relating to crystal triodes and semi-conductor materials therefor
FR1018849D FR1018849A (en) 1906-09-03 1950-03-31 Amplifier devices using semiconductors or crystals
CH289520D CH289520A (en) 1949-04-01 1950-04-01 An electric semiconductor body and method of manufacturing this body.
FR61721D FR61721E (en) 1906-09-03 1951-05-30 Amplifier devices using semiconductors or crystals
FR66309D FR66309E (en) 1906-09-03 1952-03-01 Amplifier devices using semiconductors or crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8905/49A GB665867A (en) 1949-04-01 1949-04-01 Improvements in or relating to crystal triodes and semi-conductor materials therefor

Publications (1)

Publication Number Publication Date
GB665867A true GB665867A (en) 1952-01-30

Family

ID=9861579

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8905/49A Expired GB665867A (en) 1906-09-03 1949-04-01 Improvements in or relating to crystal triodes and semi-conductor materials therefor

Country Status (2)

Country Link
CH (1) CH289520A (en)
GB (1) GB665867A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2802065A (en) * 1953-02-13 1957-08-06 Rca Corp Cascade connected common base transistor amplifier using complementary transistors
DE1037594B (en) * 1953-02-06 1958-08-28 Siemens Ag Process for the production of moldings from germanium or silicon
US2851542A (en) * 1956-05-17 1958-09-09 Rca Corp Transistor signal amplifier circuits
US2863955A (en) * 1953-03-09 1958-12-09 Gen Electric Direct-coupled amplifiers
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US2885495A (en) * 1954-03-24 1959-05-05 Rca Corp Emitter coupled transistor amplifier
US2966632A (en) * 1952-11-15 1960-12-27 Rca Corp Multistage semi-conductor signal translating circuits
US2982918A (en) * 1953-11-09 1961-05-02 Philips Corp Amplifying-circuit arrangement
US3008091A (en) * 1952-11-05 1961-11-07 Philips Corp Direct coupled cascaded complimentary transistor amplifier
US3018444A (en) * 1954-04-29 1962-01-23 Franklin F Offner Transistor amplifier

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3008091A (en) * 1952-11-05 1961-11-07 Philips Corp Direct coupled cascaded complimentary transistor amplifier
US2966632A (en) * 1952-11-15 1960-12-27 Rca Corp Multistage semi-conductor signal translating circuits
DE1037594B (en) * 1953-02-06 1958-08-28 Siemens Ag Process for the production of moldings from germanium or silicon
US2802065A (en) * 1953-02-13 1957-08-06 Rca Corp Cascade connected common base transistor amplifier using complementary transistors
US2863955A (en) * 1953-03-09 1958-12-09 Gen Electric Direct-coupled amplifiers
US2982918A (en) * 1953-11-09 1961-05-02 Philips Corp Amplifying-circuit arrangement
US2885495A (en) * 1954-03-24 1959-05-05 Rca Corp Emitter coupled transistor amplifier
US3018444A (en) * 1954-04-29 1962-01-23 Franklin F Offner Transistor amplifier
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US2851542A (en) * 1956-05-17 1958-09-09 Rca Corp Transistor signal amplifier circuits

Also Published As

Publication number Publication date
CH289520A (en) 1953-03-15

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