GB592165A - Electro-deposition of selenium - Google Patents

Electro-deposition of selenium

Info

Publication number
GB592165A
GB592165A GB9890/43A GB989043A GB592165A GB 592165 A GB592165 A GB 592165A GB 9890/43 A GB9890/43 A GB 9890/43A GB 989043 A GB989043 A GB 989043A GB 592165 A GB592165 A GB 592165A
Authority
GB
United Kingdom
Prior art keywords
selenium
density
current
solution
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9890/43A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB592165A publication Critical patent/GB592165A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Abstract

592,165. Deposition of selenium. STANDARD TELEPHONES & CABLES, Ltd. June 18, 1943, No. 9890. Convention date, Nov. 29, 1941. Drawings to Specification. [Class 41] Articles such as electric resistors, rectifiers, or photo-electric cells are coated with grey crystalline metallic selenium electro-deposited from a bath containing quadrivalent selenium ions, such for instance as a solution of the dioxide in sulphuric, nitric, hydrochloric, selenic, acetic or phosphoric acids. The conditions of temperature, current-density, concentration of selenium compounds, and acid strength, are discussed in full, with the aid of curves, but the preferred process for smooth uniform deposits on the above-mentioned articles uses a solution of 840 grams of ScO2 in a litre of 18 normal H2SO4 at 100‹ C., the current-density being initially 75 amps./ft.<2>, which may be increased after an initial deposit has been formed.
GB9890/43A 1941-11-29 1943-06-18 Electro-deposition of selenium Expired GB592165A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US592165XA 1941-11-29 1941-11-29

Publications (1)

Publication Number Publication Date
GB592165A true GB592165A (en) 1947-09-10

Family

ID=22021530

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9890/43A Expired GB592165A (en) 1941-11-29 1943-06-18 Electro-deposition of selenium

Country Status (1)

Country Link
GB (1) GB592165A (en)

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